2N4416
2N4416A
SILICON
N-CHANNEL JFETS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A
are silicon N-Channel Junction Field Effect Transistors
designed for VHF amplifier and mixer applications.
MARKING: FULL PART NUMBER
TO-72 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N4416 2N4416A UNITS
Gate-Drain Voltage VGD 30 35 V
Gate-Source Voltage VGS 30 35 V
Drain-Source Voltage VDS 30 35 V
Gate Current IG 10 mA
Power Dissipation PD 300 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N4416 2N4416A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
IGSS V
GS=20V, VDS=0 - 100 - 100 pA
IGSS V
GS=20V, VDS=0, TA=150°C - 100 - 100 nA
IDSS V
DS=15V, VGS=0 5.0 15 5.0 15 mA
BVGSS I
G=1.0µA 30 - 35 - V
VGS(off) V
DS=15V, ID=1.0nA - 6.0 2.5 6.0 V
gFS V
DS=15V, VGS=0, f=1.0kHz 4,500 7,500 4,500 7,500 S
gOS V
DS=15V, VGS=0, f=1.0kHz - 50 - 50 S
Crss V
DS=15V, VGS=0, f=1.0MHz - 1.0 - 1.0 pF
Ciss V
DS=15V, VGS=0, f=1.0MHz - 4.0 - 4.0 pF
Coss V
DS=15V, VGS=0, f=1.0MHz - 2.0 - 2.0 pF
HIGH FREQUENCY CHARACTERISTICS: 100MHz 400MHz
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
giss V
DS=15V, VGS=0 - 100 - 1,000 S
biss V
DS=15V, VGS=0 - 2,500 - 10,000 S
goss V
DS=15V, VGS=0 - 75 - 100 S
boss V
DS=15V, VGS=0 - 1,000 - 4,000 S
gfs V
DS=15V, VGS=0 - - 4,000 - S
Gps V
DS=15V, ID=5.0mA 18 - 10 - dB
NF VDS=15V, ID=5.0mA, RG=1.0k - 2.0 - 4.0 dB
R2 (4-June 2013)
www.centralsemi.com
2N4416
2N4416A
SILICON
N-CHANNEL JFETS
LEAD CODE:
1) Source
2) Drain
3) Gate
4) Case
MARKING:
FULL PART NUMBER
TO-72 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R2 (4-June 2013)
2N4416
2N4416A
SILICON
N-CHANNEL JFETS
TYPICAL ELECTRICAL CHARACTERISTICS
R2 (4-June 2013)
www.centralsemi.com
www.centralsemi.com
2N4416
2N4416A
SILICON
N-CHANNEL JFETS
TYPICAL ELECTRICAL CHARACTERISTICS
www.centralsemi.com
R2 (4-June 2013)
