Click To Buy
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES
LOWDRIFT|VGS1‐2/T|=10µV/°CTYP.
LOWNOISEen=6nV/Hz@10HzTYP.
LOWPINCHOFFV
p
=2.5VTYP.
ABSOLUTEMAXIMUMRATINGS
@25°C(unlessotherwisenoted)
MaximumTemperatures
StorageTemperature‐65°Cto+150°C
OperatingJunctionTemperature+150°C
MaximumVoltageandCurrentforEachTransistor–Note1
‐VGSSGateVoltagetoDrainorSource50V
‐VDSODraintoSourceVoltage50V
‐IG
(
f
)
GateForwardCurrent10mA
MaximumPowerDissipation
DeviceDissipation@FreeAir–Total300mW
MATCHINGCHARACTERISTICS@25°CUNLESSOTHERWISENOTED
SYMBOLCHARACTERISTICSVALUEUNITSCONDITIONS
|VGS1‐2/T|max.DRIFTVS.
TEMPERATURE
40µV/°CVDG=10V,ID=200µA
TA=‐55°Cto+125°C
|VGS1‐2|max.OFFSETVOLTAGE20mVVDG=10V,ID=200µA
ELECTRICALCHARACTERISTICS@25°C(unlessotherwisenoted)
SYMBOLCHARACTERISTICSMIN.TYP.MAX.UNITSCONDITIONS
BVGSSBreakdownVoltage5060 ‐‐ VVDS=0ID=1nA
BVGGOGate‐To‐GateBreakdown±50 ‐‐ ‐‐ V IG=1nAID=0IS=0
YfSS
TRANSCONDUCTANCE
FullConduction
2000
‐‐
7000
µmho
VDG=10VVGS=0Vf=1kHz
YfSTypicalOperation1000 ‐‐ 2000µmho VDG=15VID=200µAf=1kHz
|YFS1‐2/YFS|Mismatch ‐‐ 0.63%
IDSS
DRAINCURRENT
FullConduction
0.5
‐‐
10
mA
VDG=10VVGS=0V
|IDSS1‐2/IDSS|MismatchatFullConduction ‐‐ 15%
VGS(off)orV
p
GATEVOLTAGE
Pinchoffvoltage
‐0.5
‐‐
‐2.5
V
VDS=15VID=1nA
VGS(on)OperatingRange ‐‐ ‐‐ ‐2.3V VDS=15VID=200µA
‐IGmax.
GATECURRENT
Operating
‐‐
‐4
‐15
pA
VDG=15VID=200µA
‐IGmax.HighTemperature ‐‐ ‐‐ ‐10nATA=+125°C
‐IGSSmax.AtFullConduction ‐‐ ‐‐ 100pAVDS =0
‐IGSSmax.HighTemperature555pAVDG=15VTA=+125°C
YOSS
OUTPUTCONDUCTANCE
FullConduction
‐‐
‐‐
20
µmho
VDG=10VVGS=0V
YOSOperating ‐‐ 0.22µmhoVDG=15VID=500µA
CMR
COMMONMODEREJECTION
‐20log|VGS1‐2/VDS|
95
‐‐
‐‐
dB
VDS=10to20VID=30µA
NF
NOISE
Figure
‐‐
‐‐
0.5
dB
VDS=15VVGS=0VRG=10M
f=100HzNBW=6Hz
enVoltage ‐‐ 20 ‐‐ nV/√HzVDS=15VID=200µAf=10HzNBW=1Hz
CISS
CAPACITANCE
Input
‐‐
‐‐
8
pF
VDS=15VID=200µAf=1MHz
CRSSReverseTransfer ‐‐ ‐‐ 1.5pF
The SST405 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
SST405
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
SST405 Applications:
Wideband Differential Amps
High-Speed,Temp-Compensated Single-Ended
Input Amps
High-Speed Comparators
Impedance Converters and vibrations detectors.
The SST405 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The SST405 features a 5-
mV offset and 10-µV/°C drift. The SST405 is a direct
replacement for discontinued Siliconix SST405.
The 8 Pin P-DIP and 8 Pin SOIC provide ease of
manufacturing, and the symmetrical pinout prevents
improper orientation.
(See Packaging Information).
Linear S
y
stems re
p
laces discontinued Siliconix SST405
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
PDIP / SOIC (Top View)
Available Packages:
SST405 in PDIP / SOIC
SST405 available as bare die
Please contact Micross for full package and die dimensions
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
