1014-6A
6 Watts, 28 Volts, Class C
Microwave 1000 - 1400 MHz
GENERAL DESCRIPTION
The 1014-6A is an internally matched, COMMON BASE transistor capable of
providing 6 watts of CW RF Output power across the 1000-1400 MHz band.
This transistor is specifically designed for microwave broadband applications.
It utilizes gold metalization and diffused ballasting to provide high reliability
and superior ruggedness.
CASE OUTLINE
55LV-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C 19 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 50 V
Emitter to Base Voltage (BVebo) 3.5 V
Collector Current (Ic) 1.0 A
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Output F = 1150 MHz 6.0 W
Pin Power Input 1.2 W
Pg Power Gain Vcc = 35 Volts 7.0 7.5 dB
ηc Collector Efficiency 40 %
VSWR Load Mismatch Tolerance
Pulse width = 20 µs
LTDF = 1% 10:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo Emitter to Base Breakdown Ie = 3.0 mA 3.5 V
BVces Collector to Emitter Breakdown Ic = 25 mA 50 V
Icbo Collector Leakage Current Vcb = 28 V 1.0 mA
Cob Capacitance Vcb = 28 V, f = 1 MHz 6.5 pF
hFE DC – Current Gain Vce = 5V, Ic = 100 mA 20 100
θjc1 Thermal Resistance 9.0 °C/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.GHZ.COM OR CONTACT OUR FACTORY DIRECTLY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120