IRF9540N
HEXFET® Power MOSFET
PD - 91437B
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -23
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -16 A
IDM Pulsed Drain Current -76
PD @TC = 25°C Power Dissipation 140 W
Linear Derating Factor 0.91 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy430 mJ
IAR Avalanche Current-11 A
EAR Repetitive Avalanche Energy14 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.1
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
Thermal Resistance
VDSS = -100V
RDS(on) = 0.117Ω
ID = -23A
lAdvanced Process Technology
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lP-Channel
lFully Avalanche Rated
5/13/98
S
D
G
T
O
-22
0
AB
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
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IRF9540N
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -11A, VGS = 0V
trr Reverse Recovery Time ––– 150 220 ns TJ = 25°C, IF = -11A
Qrr Reverse RecoveryCharge ––– 830 1200 nC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.117 ΩVGS = -10V, ID = -11A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 5.3 ––– ––– S VDS = -50V , ID = -11A
––– ––– -25 µA VDS = -100V, VGS = 0V
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge –– – ––– 97 ID = -11A
Qgs Gate-to-Source Charge ––– ––– 15 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 51 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 15 ––– VDD = -50V
trRise Time ––– 67 ––– ID = -11A
td(off) Turn-Off Delay Time ––– 51 ––– RG = 5.1Ω
tfFall Time ––– 51 ––– RD = 4.2Ω, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 1300 ––– VGS = 0V
Coss Output Capacitance ––– 400 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) ISD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 7.1mH
RG = 25Ω, IAS = -11A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Source-Drain Ratings and Characteristics
A
S
D
G
-23
-76
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IRF9540N
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10 100
D
DS
20µs PULSE WIDTH
T = 2 5°C
c
A
-I , D ra in-to-Sou rce C urre nt (A )
-V , D rain-to-Source Voltage (V)
VGS
T OP - 15 V
- 10V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
B O TT O M - 4. 5V
-4 .5V
1
10
100
0.1 1 10 100
D
DS
A
-I , Drain-to-Source Current (A )
-V , Dra in -t o-So u r ce Volta
g
e
(
V
)
VGS
T OP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
20
µ
s PU LSE WIDTH
T = 175°C
C
0.1
1
10
100
45678910
T = 25°C
J
GS
D
A
-I , D rain -to -So urc e Curre nt (A )
-V , Ga te-to-S ource Voltage (V)
V = -25V
20µs PU LSE WIDTH
DS
T = 175°C
J
0.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Tem perature (°C )
R , D ra in-to -S o u rc e O n R e s is ta nc e
DS(on)
(Normalized)
A
V = -1 0V
GS
I = -19 A
D
JJ
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IRF9540N
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
500
1000
1500
2000
2500
3000
1 10 100
C , Capacitance (pF)
A
DS
-V , Dra in -to -So u rc e Vo lta
g
e
(
V
)
V = 0 V , f = 1MH z
C = C + C , C S HO R T E D
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss d s gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 20406080100
G
GS
A
-V , G a te-to -So u rc e V oltag e (V )
Q , T o ta l G a te Ch ar
g
e
(
nC
)
V = -80 V
V = -50 V
V = -20 V
DS
DS
DS
FO R TEST CIRCU IT
S E E F IG UR E 1 3
I = -1 1A
D
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T = 25°C
J
V = 0 V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V )
T = 17 5°C
J
1
10
100
1000
1 10 100 1000
O P ER A TION IN T H IS A R EA L IMITED
B Y R
DS(on)
10ms
A
-I , D ra in C urre nt (A )
-V , Dra in -to - S o u rc e V o lta
g
e
(
V
)
DS
D
100µs
1ms
T = 25 °C
T = 17 5 °C
Sin
g
le P u ls e
C
J
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IRF9540N
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
5
10
15
20
25
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
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IRF9540N
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tpV
(
BR
)
DSS
I
AS
R
G
IAS
0.01
Ω
t
p
D.U.T
L
V
DS
VDD
DRIVER A
15V
-20V
0
200
400
600
800
1000
1200
25 50 75 100 125 150 175
J
E , S in gle Pu lse Avalanc he E n ergy (m J )
AS
A
Startin
g
T , J unc tion Temperature
(
°C
)
I
T O P -4 .7A
-8 .1 A
B OTT O M - 11 A
D
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IRF9540N
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
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IRF9540N
LEAD ASSIGNM ENTS
1 - GA T E
2 - DR A IN
3 - SO URCE
4 - DR A IN
- B -
1 .32 (.05 2)
1 .22 (.04 8)
3X 0.55 (.022)
0.46 (.018)
2 .92 (.115)
2 .64 (.104)
4.69 (.18 5)
4.20 (.16 5)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10 .54 (.415)
10 .29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0 .3 6 (.014 ) M B A M
4
1 2 3
NOTES:
1 DIME NSIO NIN G & T OLERA NCIN G P ER A NSI Y14 . 5 M, 1 98 2 . 3 O UTLINE C ON FOR MS T O JED EC O UT L INE TO- 22 0AB.
2 C ONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
PART NUMBER
INTERNATIONAL
RE CT I F IER
L OGO
EXAMP LE : TH IS IS AN IRF1010
W IT H ASSEMB LY
LO T CODE 9B1M
ASSEMBLY
LO T C ODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9 B 1M
Part Marking Information
TO-220AB
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
PART NU MB ER
INTERNATIONAL
RE CTIF IER
LOGO
EXA MPLE : THIS IS AN IR F1010
W ITH A SSEMBLY
LO T COD E 9 B1 M
ASSEMBLY
LO T C ODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9 B 1M
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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