IRANSYS MMBTA55 / MMBTA56 ELECTRONICS PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIMITED Features Epitaxial Planar Die Construction Complementary NPN Types Available SOT-23 (MMBTAO5 / MMBTA06) | lea Dim Min Max Ideal for Medium Power Amplification and [e > A 0.37 | 0.51 Switching B | 119 | 1.40 TOP VIEW b Cc 2.10 | 2.50 Mechanical Data pD | oso | 105 le] le] Case: SOT-23, Molded Plastic - po FE | 045 | 0.61 Terminals: Solderable per MIL-STD-202, KS go G 1.78 | 2.05 Method 208 . . \ ++ H | 265 | 3.05 Terminal Connections: See Diagram rN 4 J 0013 | 045 MMBTAS Marking: K2G, R2G aH + | [ow [0 arking: ; Weight: 0.008 grarns (approx.) al * C O45 | 0-61 a M | 0.076 | 0.178 All Dimensions in mm Maximum Ratings @ Ta= 25 C unless otherwise specified Characteristic Symbol MMBTA55 MMBTA56 Unit Collector-Base Voltage VcBo -60 -80 Vv Collector-Emitter Voltage VcEO -60 -80 Vv Emitter-Base Voltage VEBO -4.0 Vv Collector Current - Continuous (Note 1) le -500 mA Power Dissipation (Note 1) Pg 350 mW Thermal Resistance, Junction to Ambient (Note 1) R Ja 357 K/AW Operating and Storage and Temperature Range Tj, Tste -55 to +150 Cc Electrical Characteristics @ Ta = 25 C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage MMBTA55 - mes MMBtase | Vere | gg V___| le=-100 A:le=0 Collector-Emitter Breakdown Voltage MMBTA55 -60 4 MMBTA56 | RICEC | gg V Io =-1.0mA, Is = 0 Emitter-Base Breakdown Voltage V(BR)EBO -4.0 V le =-100 A, Ic =0 Collector Cutoff Current MMBTA55 Vop = -60V, lE=0 MMBTAS6 | !CB0 100 nA | Vep = -80V) le=0 Collector Cutoff Current MMBTA55 Voce = -60V, Ino = OV MMBTAS6 | _ [CEX 100 nA | VcEe=-80V; lag = OV ON CHARACTERISTICS (Note 2) : Io = -10mA, Voce = -1.0V DC Current Gain hrE 100 ic = -100mA, Veg = -1.0V Collector-Emitter Saturation Voltage VcE(SAT) -0.25 Vv Io = -100mA, Ip = -10MA Base- Emitter Saturation Voltage VBE(SAT) -1.2 Vv I =-100MA, Vce = -1.0V SMALL SIGNAL CHARACTERISTICS : : Voce = -1.0V, Ic = -100mA, Current Gain-Bandwidth Product fT 50 MHz f = 100MHz Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, dutycycle 2%.