GBU8A, GBU8B, GBU8D, GBU8G, GBU8J, GBU8K, GBU8M
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Revision: 10-Jul-2020 1Document Number: 88616
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Glass Passivated Single-Phase Bridge Rectifier
LINKS TO ADDITIONAL RESOURCES
FEATURES
UL recognition file number E54214
Ideal for printed circuit boards
High surge current capability
High case dielectric strength of 1500 VRMS
Solder dip 275 °C max. 10 s, per JESD 22-B106
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for monitor, TV, printer, power supply, switching
mode power supply, adapter, audio equipment, and home
appliances applications.
MECHANICAL DATA
Case: GBU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 1A whisker test
Polarity: as marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Notes
(1) Unit case mounted on aIuminum plate heatsink
(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
PRIMARY CHARACTERISTICS
IF(AV) 8.0 A
VRRM 50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM 200 A
IR5 μA
VF at IF = 8.0 A 1.0 V
TJ max. 150 °C
Package GBU
Circuit configuration In-line
Case Style GBU
- ~ ~ +
Case Style GBU
+
~
~
-
~
~
3
3
3
D
D
D
3
D
3D Models
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward
rectified output current at
TC = 60 °C IF(AV) (1) 8.0 A
TA = 40 °C IF(AV) (2) 3.9
Peak forward surge current single sine-wave
super-imposed on rated load IFSM 200 A
Rating for fusing (t < 8.3 ms) I2t 166 A2s
Operating junction and storage
temperature range TJ, TSTG -55 to +150 °C
GBU8A, GBU8B, GBU8D, GBU8G, GBU8J, GBU8K, GBU8M
www.vishay.com Vishay General Semiconductor
Revision: 10-Jul-2020 2Document Number: 88616
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Units case mounted on aIuminum plate heatsink
(2) Units mounted in free air, no heatsink on PCB, 0.5" x 0.5" (12 mm x 12 mm) copper pads, 0.375" (9.5 mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screws
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M UNIT
Maximum
instantaneous forward
voltage drop per diode
8.0 A VF 1.0 V
Maximum DC reverse
current at rated DC
blocking voltage per diode
TA = 25 °C
IR
5.0
μA
TA = 125 °C 500
Typical junction
capacitance per diode 4 V, 1 MHz CJ 68 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M UNIT
Typical thermal resistance RJA (2) 20 °C/W
RJC (1)(3) 4.0
ORDERING INFORMATION
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GBU8J-E3/45 3.857 45 20 Tube
GBU8J-E3/51 3.857 51 250 Paper tray
GBU8J-M3/45 3.857 45 20 Tube
GBU8J-M3/51 3.857 51 250 Paper tray
050 100 150
0
2.0
4.0
6.0
8.0
25 75 125
Av erage Forward Output Current (A)
Temperature (°C)
Heatsink Mounting, TC
PCB Mounting, TA
0.47" x 0.47" (12 mm x 12 mm)
Copper Pads 0.375" (9.5 mm) Lead
Length 60 Hz Resistive or Inductive Load
110 100
0
50
100
150
200
250
T
J
= 150 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
GBU8A, GBU8B, GBU8D, GBU8G, GBU8J, GBU8K, GBU8M
www.vishay.com Vishay General Semiconductor
Revision: 10-Jul-2020 3Document Number: 88616
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01
1
100
10
0.1
InstantaneousForward Current (A)
InstantaneousForward Voltage (V)
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (μA)
Percent of Rated Peak Reverse Voltage (%)
TA= 150 °C
TA= 125 °C
TA= 100 °C
TA= 25 °C
10
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
TJ= 25 °C
f = 1.0 MHz
Vsi
g
= 50 mV
p
-
p
100
0.01 0.1 110 100
0.1
1
10
t - Heating Time (s)
Tran sient Thermal Impedance (°C/W)
Case Type GBU
Polarity shown on front side of case, positive lead by beveled corner
0.125 (3.2) x 45°
Chamfer
0.085 (2.16)
0.065 (1.65)
0.020 R (TYP.)
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.075
(1.9) R
.
0.080 (2.03)
0.060 (1.52)
0.050 (1.27)
0.040 (1.02)
0.080 (2.03)
0.065 (1.65) 0.210 (5.33)
0.190 (4.83)
0.140 (3.56)
0.130 (3.30)
9° TYP.
5° TYP.
0.085 (2.16)
0.075 (1.90)
0.026 (0.66)
0.020 (0.51)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.710 (18.0)
0.690 (17.5)
0.100 (2.54)
0.085 (2.16)