1N4001GP thru 1N4007GP
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction Rectifier Reverse Voltage
50 to 1000V
Forward Current 1.0A
Patented*
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol 1N 1N 1N 1N 1N 1N 1N Unit
4001GP 4002GP 4003GP 4004GP 4005GP 4006GP 4007GP
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
* Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
* Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
* Maximum average forward rectified current
0.375" (9.5mm) lead length at TA= 75°CIF(AV) 1.0 A
* Peak forward surge current 8.3ms single half sine-wave IFSM 30 A
superimposed on rated load (JEDEC Method)
* Maximum full load reverse current, full cycle
average 0.375" (9.5mm) lead length TA= 75°CIR(AV) 30 µA
Typical thermal resistance (Note 1) RθJA 55 °C/W
RθJL 25
* Operating junction and storage temperature range TJ, TSTG 65 to +175 °C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 1.0A VF1.1 V
* Maximum DC reverse current TA= 25°C 5.0
at rated DC blocking voltage TA= 125°CIR50 µA
Typical reverse recovery time at
IF = 0.5A, IR = 1.0A, Irr = 0.25A trr 2.0 µs
Typical junction capacitance at 4.0V, 1MHz CJ8.0 pF
Notes: (1) Thermal resistance from junction to ambient at 0.375 (9.5mm) lead length, P.C.B. mounted *JEDEC registered values
DO-204AL
(DO-41) Features
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
High temperature metallurgically bonded construction
Cavity-free glass passivated junction
Capable of meeting environmental standards of
MIL-S-19500
1.0 Ampere operation at TA= 75°C with no thermal
runaway
Typical IRless than 0.1µA
High temperature soldering guaranteed: 350°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
Case: JEDEC DO-204AL, molded plastic over glass body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012 oz., 0.3 g
®
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306
Document Number 88504 www.vishay.com
08-Jul-03 1
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
DIA.
NOTE:
Lead diameter is for suffix "E" part numbers
0.026 (0.66)
0.023 (0.58)
1N4001GP thru 1N4007GP
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
00
Fig. 1 – Forwar d Current Derating Curve
Average Forward Rectified Current (A)
Ambient Temperature (°C)
0
Fig. 4 – Typical Reverse Characteristics
5.0
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Fig. 5 – Typical Junction Capacitance
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 6 – Typical Transient Thermal
Impedance
25 50 75 100 125 150 175
0.2
0.4
0.6
0.8
1.0 60HZ Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
1 10 100
Number of Cycles at 60HZ
10
15
20
25
30
Peak Forward Surge Current (A)
TJ = TJmax
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
0.01
0.1
1
10
20
Instantaneous Forward Current (A)
0.01
0.1
1
10
Instantaneous Reverse Current (µA)
60 80 10020 40
Percent of Rated Peak Reverse Voltage (%)
TJ = 25°C
TJ = 100°C
0.1 1 10 100
Reverse Voltage (V)
1
10
20
Junction Capacitance (pF)
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
0.01 0.1 1 10 100
t -- Pulse Duration (sec)
0.1
10
100
1
Transient Thermal Impedance (°C/W)
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
www.vishay.com Document Number 88504
208-Jul-03