MOTOROLA SC {DIODES/OPTOF ol pe Puaezess OO7a4be 7 E res-y Silicon Controlled Rectifiers Reverse Blocking Triode Thyristor .+ all diffused PNPN devices designed for operation in mA/zA signal or detection circuits. Low-Level Gate Characteristics IGT = 100 nA Max @ 25C @ Low Holding Current Ix = 3 mA Max @ 25C @ Anode Common To Case Glass-to-Metal Bond for Maximum Hermetic Seal 2N4213 thru 2N4219 SCRs 1.6 AMPERES RMS 50 thru 400 VOLTS 3 274 CASE 79-04 _ {TO-205AD) STYLE 3 *MAXIMUM RATINGS (Ty = 125C unless otherwise noted.) - Characteristic Symbo! Rating Unit Peak Repetitive Forward and Reverse Blocking Voltage, Note 1 VDRM Volts 2N4213 or 50 2N4214 VRRM 100 2N4216 200 2N4219 400 Forward Current RMS iTRMS) 1.6 Amps (All Conduction Angles) Peak Surge Current ITSM 15 Amps (One Cycle, 60 Hz) No Repetition until Thermal Equilibrium is Restored Peak Gate Power Forward PGFM 0.1 Watt Average Gate Power Forward PGF(AV) 0.01 Watt Peak Gate Current Forward IGFM 0.1 Amp Peak Gate Voltage Forward VGFM 6 Volts Reverse VGRM 6 Operating Junction Temperature Range Ty 65 to +125 Storage Temperature Range Tstg 65 to +150 C Lead Solder Temperature _- +230 C (>1/16" from case, 10 s max) "Indicates JEDEC Registered Values. i Note 1. VpRM and VaR can be applied for all types on a continuous de basis without incurring damage. 3-37 MOTOROLA THYRISTOR DEVICE DATAMOTOROLA SC {DIODES/OPTO} gy pe Busn2255 007489b43 4 Breas 2N4213 thru 2N4219 ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted, RGK = 1000 ohms.), Note 1 Characteristic Symbol Min Max Unit : *Peak Forward or Reverse Blocking Current . IDRM: IRRM : (Rated Vporm of VRRM: gate open) Ty = 25C _ 10 pA : Ty = 125C - 200 BA *Forward On Voltage VIM _ 1.5 Volts {ITM = 1 Adc peak) Gate Trigger Current (Continuous de), Note 2 let Adc (Vp = 7 V, Ry = 100 ohms) (Te = 25C) _~ 100 {To = 65C) - 300 Gate Trigger Voltage (Continuous dc} VGT Volt (Vp = 7 V, RE = 100 ohms, Te = 25C) _ 0.8 "(Vp = 7 V, RE = 100 ohms, To = 65C) - 1 {Vp = Rated Vonm, RL = 100 ohms, Ty = 125C) 0.1 _ Holding Current (Vp =7V) To = 25C ~ IHx 3 mA *Tco = 65C 7 Turn-On Time ton Circuit dependent, : Turn-Off Time toff consult manufacturer i *Indicates JEDEC Registered Values. Notes: 1. Thyristor devices shall not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. : Thyristor devices shall not have a positive bias applied to the gate concurrently with a negative potential applied to the anode. : 2. ReK current is not included in measurement. FIGURE 1 CASE TEMPERATURE vs CURRENT FIGURE 2 AMBIENT TEMPERATURE vs CURRENT = S a oS x Ss R 5 s 3 a | @ CONDUCTIGN ANGLE a @ = CONDUCTION ANGLE ao = oe So a S 90 2 = - So 1809 ~ S nN S a= 308 1209 0.2 0.4 Og 08 1.0 1.2 1.4 1.6 01 02 0.3 04 0.5 0.6 0.7 'Ttay). AVERAGE ON-STATE CURRENT (AMP) ITtav). AVERAGE ON STATE CURRENT (AMP) a o So Tg, MAXIMUM ALLOWABLE CASE TEMPERATURE (C} Ta, MAXIMUM ALLOWABLE AMBIENT TEMPERATURE tC} r=) MOTOROLA THYRISTOR DEVICE DATA 3-38