Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-35143
Features
• Low Noise Figure
• Excellent Uniformity in
Product Specifications
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
• Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 2V, 15 mA (Typ.)
• 0.4 dB Noise Figure
• 18 dB Associated Gain
• 11 dBm Output Power at
1 dB Gain Compression
• 21 dBm Output 3rd Order
Intercept
Applications
• Low Noise Amplifier for
Cellular/PCS Handsets
• LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
• General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Description
Agilent’s ATF-35143 is a high
dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Based on its featured perfor-
mance, ATF-35143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir-
ing super low noise figure with
good intercept in the 450 MHz to
10 GHz frequency range.
Other PHEMT devices in this
family are the ATF-34143 and the
ATF-33143. The typical specifica-
tions for these devices at 2 GHz
are shown in the table below:
Pin Connections and
Package Marking
Part No. Gate Width Bias Point NF (dB) Ga (dB) OIP3 (dBm)
ATF-33143 1600 µ4V, 80 mA 0.5 15.0 33.5
ATF-34143 800 µ4V, 60 mA 0.5 17.5 31.5
ATF-35143 400 µ2V, 15 mA 0.4 18.0 21.0
GATE
5Px
SOURCE
DRAIN SOURCE
Note: Top View. Package marking
provides orientation and identification.
“5P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
2
ATF-35143 Absolute Maximum Ratings[1]
Absolute
Symbol Parameter Units Maximum
VDS Drain - Source Voltage[2] V 5.5
VGS Gate - Source Voltage[2] V-5
V
GD Gate Drain Voltage[2] V-5
IDS Drain Current[2] mA Idss[3]
Pdiss Total Power Dissipation[4] mW 300
Pin max RF Input Power dBm 14
TCH Channel Temperature °C 160
TSTG Storage Temperature °C -65 to 160
θjc Thermal Resistance[5] °C/W 310
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. VGS = 0 V
4. Source lead temperature is 25°C.
Derate 3.2 mW/°C for TL > 67°C.
5. Thermal resistance measured using
150°C Liquid Crystal Measurement
method.
Product Consistency Distribution Charts [7, 8]
V
DS
(V)
Figure 1. Typical Pulsed I-V Curves[6].
(V
GS
= -0.2 V per step)
I
DS
(mA)
02 4 68
120
100
80
60
40
20
0
+0.6 V
0 V
–0.6 V
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 2 V, 15 mA.
LSL=19.0, Nominal=20.9, USL=23.0
19 2120 2322 24
120
100
80
60
40
20
0
-3 Std +3 Std
Cpk = 1.73
Std = 0.35
NF (dB)
Figure 3. NF @ 2 GHz, 2 V, 15 mA.
LSL=0.2, Nominal=0.37, USL=0.7
0.2 0.40.3 0.60.5 0.7
200
160
120
80
40
0
-3 Std +3 Std
Cpk = 3.7
Std = 0.03
GAIN (dB)
Figure 4. Gain @ 2 GHz, 2 V, 15 mA.
LSL=16.5, Nominal=18.0, USL=19.5
16 17 18 19 20
160
120
80
40
0
-3 Std +3 Std
Cpk = 2.75
Std = 0.17
Notes:
6. Under large signal conditions, V
GS
may
swing positive and the drain current may
exceed I
dss
. These conditions are
acceptable as long as the maximum P
diss
and P
in max
ratings are not exceeded.
7. Distribution data sample size is 450
samples taken from 9 different wafers.
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
8.
Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production test
requirements. Circuit losses have been de-
embedded from actual measurements.
3
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
requirements. Circuit losses have been de-embedded from actual measurements.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag = 0.66
Γ_ang = 5°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
ATF-35143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol Parameters and Test Conditions Units Min. Typ.[2] Max.
Idss [1] Saturated Drain Current VDS = 1.5 V, V
GS = 0 V mA 40 65 80
VP[1] Pinchoff Voltage VDS = 1.5 V, IDS = 10% of Idss V -0.65 -0.5 -0.35
IdQuiescent Bias Current VGS = 0.45 V, VDS = 2 V mA — 15 —
gm[1] Transconductance VDS = 1.5 V, gm = Idss /VPmmho 90 120 —
IGDO Gate to Drain Leakage Current VGD = 5 V µA 250
Igss Gate Leakage Current VGD = VGS = -4 V µA — 10 150
f = 2 GHz VDS = 2 V, IDS = 15 mA dB 0.4 0.7
NF Noise Figure[3] VDS = 2 V, IDS = 5 mA 0.5 0.9
f = 900 MHz VDS = 2 V, IDS = 15 mA dB 0.3
VDS = 2 V, IDS = 5 mA 0.4
f = 2 GHz VDS = 2 V, IDS = 15 mA dB 16.5 18 19.5
GaAssociated Gain[3] VDS = 2 V, IDS = 5 mA 14 16 18
f = 900 MHz VDS = 2 V, IDS = 15 mA dB 20
VDS = 2 V, IDS = 5 mA 18
Output 3rd Order
f = 2 GHz VDS = 2 V, IDS = 15 mA dBm 19 21
OIP3 Intercept Point[4, 5]
VDS = 2 V, IDS = 5 mA 14
f = 900 MHz VDS = 2 V, IDS = 15 mA dBm 19
VDS = 2 V, IDS = 5 mA 14
1 dB Compressed
f = 2 GHz VDS = 2 V, IDSQ = 15 mA dBm 10
P1dB Intercept Point[4]
VDS = 2 V, IDSQ = 5 mA 8
f = 900 MHz VDS = 2 V, IDSQ = 15 mA dBm 9
VDS = 2 V, IDSQ = 5 mA 9
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. 2V 5 mA min/max data guaranteed via the 2V 15 mA production test.
4. Measurements obtained using production test board described in Figure 5.
5. Pout = -10 dBm per tone
4
ATF-35143 Typical Performance Curves
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V
15 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS
= 4 V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
I
DSQ
(mA)
Figure 6. OIP3 and P
1dB
vs. Bias at
2 GHz.
[1,2]
OIP3, P
1dB
(dBm)
060
30
25
20
15
10
5
0
2010 40 5030
2 V
3 V
4 V
OIP3
P
1dB
I
DSQ
(mA)
Figure 7. OIP3 and P
1dB
vs. Bias at
900 MHz.
[1,2]
OIP3, P
1dB
(dBm)
0602010 40 5030
2 V
3 V
4 V
OIP3
P
1dB
30
25
20
15
10
5
I
DSQ
(mA)
Figure 8. NF and G
a
vs. Bias at 2 GHz.
[1]
Ga (dB)
0602010 40 5030
2 V
3 V
4 V
G
a
NF
20
19
18
17
16
15
NF (dB)
2.5
2
1.5
1
0.5
0
I
DSQ
(mA)
Figure 9. NF and G
a
vs. Bias at
900 MHz.
[1]
Ga (dB)
0602010 40 5030
2 V
3 V
4 V
G
a
NF
24
22
20
18
16
14
NF (dB)
2.5
2
1.5
1
0.5
0
I
DS
(mA)
Figure 10. P
1dB
vs. Bias (Active Bias)
Tuned for NF @ 2V, 15 mA at 2 GHz.
[1]
P
1dB
(dBm)
080
25
20
15
10
5
0
-5
20 40 60
2 V
3 V
4 V
I
DS
(mA)
Figure 11. P
1dB
vs. Bias (Active Bias)
Tuned for NF @ 2V, 15 mA at 900 MHz.
[1]
P
1dB
(dBm)
08020 40 60
2 V
3 V
4 V
20
15
10
5
0
-5
5
ATF-35143 Typical Performance Curves, continued
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2V 15mA bias. This circuit represents a trade-off
between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have
been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is
running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when
compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V
and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and
Current at 2V.
F
min
(dB)
010
1.50
1.25
1.00
0.75
0.50
0.25
0
4286
5 mA
15 mA
30 mA
FREQUENCY (GHz)
Figure 13. Associated Gain vs.
Frequency and Current at 2V.
F
min
(dB)
010
25
20
15
10
5
4286
5 mA
15 mA
30 mA
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency
and Temperature, VDS=2V, IDS = 15 mA.
G
a
(dB)
08246
25°C
-40°C
85°C
22
20
18
16
14
12
I
DS
(mA)
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1] (Active Bias, 2V, 3.9 GHz).
OIP3, P
1dB
(dBm), Gain (dB)
08020 40 60
P
1dB
OIP3
Gain
NF
25
20
15
10
5
0
NF (dB)
2.5
2
1.5
1
0.5
0
NF (dB)
1.0
0.8
0.6
0.4
0.2
0
I
DS
(mA)
Figure 17. OIP3, P1dB, NF and Gain vs.
Bias[1] (Active Bias, 2V, 5.8 GHz).
OIP3, P
1dB
(dBm), Gain (dB)
08020 40 60
P
1dB
OIP3
Gain
NF
25
20
15
10
5
0
-5
NF (dB)
3
2.5
2
1.5
1
0.5
0
FREQUENCY (GHz)
Figure 15. OIP3 and P1dB vs. Frequency
and Temperature[1,2], VDS=2V, IDS = 15 mA.
OIP3, P
1dB
(dBm)
08246
25°C
-40°C
85°C
25
20
15
10
5
6
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 5 mA
Freq. Fmin ΓΓ
ΓΓ
Γopt Rn/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.10 0.91 6.4 0.22 19.3
0.9 0.12 0.87 15.0 0.22 17.9
1.0 0.14 0.86 17.2 0.22 17.5
1.5 0.20 0.81 28.0 0.22 16.3
1.8 0.23 0.78 33.4 0.21 15.8
2.0 0.27 0.76 38.8 0.21 15.4
2.5 0.33 0.71 50.0 0.19 14.7
3.0 0.39 0.66 61.9 0.17 14.0
4.0 0.52 0.58 87.2 0.13 12.7
5.0 0.64 0.52 114.4 0.09 11.5
6.0 0.77 0.47 143.2 0.06 10.4
7.0 0.89 0.43 173.5 0.05 9.5
8.0 1.02 0.41 -155.2 0.07 8.7
9.0 1.14 0.40 -122.9 0.13 8.0
10.0 1.27 0.41 -90.1 0.24 7.5
FREQUENCY (GHz)
Figure 18. MSG/MAG and |S
21
|
2
vs.
Frequency at 2 V, 5 mA.
MSG/MAG and S21 (dB)
020
25
20
15
10
5
0
-5
51015
MSG
MAG
S
21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 5 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -16.90 13.34 4.64 166.04 -31.70 0.026 77.91 0.73 -12.47 22.52
0.75 0.98 -26.37 13.29 4.62 157.78 -28.18 0.039 71.12 0.72 -17.53 20.83
1.00 0.97 -34.76 13.16 4.55 150.72 -25.85 0.051 65.76 0.71 -23.33 19.50
1.50 0.94 -50.59 12.83 4.38 137.02 -22.73 0.073 54.85 0.68 -34.88 17.78
1.75 0.91 -58.26 12.66 4.30 130.38 -21.62 0.083 49.69 0.67 -40.49 17.13
2.00 0.90 -65.74 12.44 4.19 123.90 -20.72 0.092 44.45 0.65 -46.03 16.58
2.50 0.85 -80.62 12.04 4.00 111.27 -19.33 0.108 34.61 0.62 -56.68 15.69
3.00 0.81 -95.48 11.61 3.81 99.08 -18.27 0.122 25.21 0.59 -66.71 14.94
4.00 0.72 -125.99 10.71 3.43 75.75 -17.08 0.140 6.95 0.52 -85.11 13.89
5.00 0.66 -156.09 9.79 3.09 53.63 -16.48 0.150 -9.83 0.45 -102.71 13.13
6.00 0.62 174.97 8.93 2.80 32.77 -16.14 0.156 -25.73 0.38 -120.16 12.53
7.00 0.60 145.61 8.06 2.53 12.43 -16.08 0.157 -41.00 0.31 -138.01 12.07
8.00 0.60 118.39 7.20 2.29 -7.12 -16.31 0.153 -54.14 0.25 -157.10 11.75
9.00 0.62 93.15 6.26 2.06 -26.14 -16.59 0.148 -67.05 0.20 -178.27 11.19
10.00 0.66 71.31 5.43 1.87 -44.14 -16.89 0.143 -78.09 0.16 157.62 9.63
11.00 0.70 50.91 4.58 1.69 -62.85 -17.14 0.139 -88.99 0.14 121.82 8.81
12.00 0.72 31.04 3.64 1.52 -81.42 -17.52 0.133 -100.38 0.17 82.33 7.87
13.00 0.74 11.26 2.56 1.34 -99.46 -18.13 0.124 -111.06 0.22 53.17 6.79
14.00 0.76 -3.08 1.45 1.18 -115.94 -18.79 0.115 -119.00 0.28 27.32 5.86
15.00 0.82 -14.26 0.43 1.05 -132.24 -19.25 0.109 -127.12 0.34 6.01 5.89
16.00 0.82 -26.64 -0.72 0.92 -149.24 -19.58 0.105 -135.42 0.42 -10.69 4.84
17.00 0.84 -38.94 -1.83 0.81 -164.44 -19.74 0.103 -143.49 0.49 -22.32 4.62
18.00 0.86 -54.78 -3.02 0.71 179.28 -20.18 0.098 -152.36 0.56 -35.90 4.04
7
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 10 mA
Freq. Fmin ΓΓ
ΓΓ
Γopt Rn/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.10 0.88 5.0 0.15 20.5
0.9 0.11 0.84 14.0 0.15 19.0
1.0 0.12 0.83 16.0 0.15 18.6
1.5 0.17 0.77 26.0 0.15 17.5
1.8 0.20 0.74 31.9 0.15 16.9
2.0 0.23 0.71 37.3 0.14 16.4
2.5 0.29 0.66 48.6 0.14 15.7
3.0 0.34 0.60 60.6 0.12 15.0
4.0 0.46 0.52 86.8 0.12 13.6
5.0 0.58 0.45 115.3 0.08 12.4
6.0 0.69 0.40 145.8 0.05 11.3
7.0 0.81 0.37 177.7 0.05 10.3
8.0 0.92 0.35 -149.3 0.07 9.5
9.0 1.04 0.35 -115.6 0.12 8.8
10.0 1.16 0.37 -81.8 0.22 8.3
FREQUENCY (GHz)
Figure 19. MSG/MAG and |S
21
|
2
vs.
Frequency at 2 V, 10 mA.
MSG/MAG and S
21
(dB)
02051015
MSG
MAG
S
21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at sixteen different impedances using an ATN NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 10 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -18.75 15.89 6.23 164.76 -32.40 0.024 77.63 0.63 -14.09 24.14
0.75 0.97 -29.11 15.79 6.16 155.98 -28.87 0.036 70.58 0.61 -19.69 22.30
1.00 0.95 -38.28 15.61 6.03 148.42 -26.56 0.047 64.88 0.60 -26.10 21.08
1.50 0.91 -55.52 15.17 5.73 133.92 -23.61 0.066 54.16 0.57 -38.73 19.39
1.75 0.89 -63.78 14.92 5.57 127.01 -22.62 0.074 49.11 0.56 -44.79 18.75
2.00 0.86 -71.82 14.65 5.40 120.27 -21.72 0.082 44.08 0.54 -50.70 18.19
2.50 0.81 -87.59 14.11 5.08 107.36 -20.35 0.096 34.60 0.51 -61.95 17.23
3.00 0.76 -103.22 13.54 4.76 95.04 -19.41 0.107 25.71 0.47 -72.47 16.48
4.00 0.66 -134.81 12.40 4.17 71.95 -18.27 0.122 9.04 0.41 -91.47 15.34
5.00 0.61 -165.34 11.29 3.67 50.43 -17.65 0.131 -5.97 0.34 -110.05 14.47
6.00 0.58 165.88 10.27 3.26 30.28 -17.33 0.136 -20.15 0.27 -129.24 13.80
7.00 0.57 137.00 9.27 2.91 10.68 -17.14 0.139 -33.84 0.21 -150.49 13.21
8.00 0.58 110.78 8.33 2.61 -8.09 -17.14 0.139 -45.60 0.17 -174.77 12.73
9.00 0.61 86.75 7.32 2.32 -26.38 -17.20 0.138 -57.65 0.13 154.01 10.69
10.00 0.65 66.25 6.44 2.10 -43.90 -17.20 0.138 -68.22 0.11 118.18 9.85
11.00 0.69 46.88 5.54 1.89 -61.97 -17.27 0.137 -79.30 0.14 78.36 9.16
12.00 0.72 27.76 4.56 1.69 -79.90 -17.39 0.135 -90.87 0.19 49.57 8.34
13.00 0.74 8.62 3.45 1.49 -97.18 -17.79 0.129 -102.19 0.26 29.95 7.35
14.00 0.77 -5.28 2.33 1.31 -112.92 -18.20 0.123 -110.80 0.33 9.45 6.51
15.00 0.82 -16.03 1.29 1.16 -128.66 -18.56 0.118 -120.09 0.39 -7.98 6.51
16.00 0.82 -28.32 0.19 1.02 -144.87 -18.79 0.115 -129.92 0.45 -22.30 5.48
17.00 0.84 -40.43 -0.87 0.91 -159.49 -18.79 0.115 -139.60 0.51 -32.23 5.24
18.00 0.86 -56.14 -1.99 0.80 -175.19 -19.33 0.108 -149.17 0.57 -44.43 4.72
8
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 15 mA
Freq. Fmin ΓΓ
ΓΓ
Γopt Rn/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.10 0.88 4.5 0.19 20.9
0.9 0.13 0.83 13.1 0.17 19.4
1.0 0.14 0.82 15.3 0.16 19.2
1.5 0.19 0.76 26.1 0.15 17.9
1.8 0.22 0.72 32.6 0.15 17.3
2.0 0.23 0.70 36.9 0.14 17.0
2.5 0.29 0.64 48.5 0.12 16.2
3.0 0.34 0.58 60.9 0.07 15.4
4.0 0.45 0.49 87.9 0.13 14.1
5.0 0.56 0.42 117.4 0.07 12.8
6.0 0.67 0.37 149.0 0.05 11.7
7.0 0.79 0.34 -178.1 0.05 10.8
8.0 0.90 0.33 -144.3 0.07 9.9
9.0 1.01 0.34 -110.2 0.13 9.2
10.0 1.12 0.36 -76.3 0.23 8.6
FREQUENCY (GHz)
Figure 20. MSG/MAG and |S
21
|
2
vs.
Frequency at 2 V, 15 mA.
MSG/MAG and S
21
(dB)
02051015
MSG
MAG
S
21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 15 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -19.75 17.02 7.10 164.04 -32.77 0.023 77.60 0.57 -14.99 24.89
0.75 0.97 -30.58 16.90 7.00 154.98 -29.37 0.034 70.54 0.55 -20.86 23.05
1.00 0.95 -40.15 16.69 6.83 147.18 -27.13 0.044 64.80 0.54 -27.61 21.91
1.50 0.90 -58.08 16.18 6.44 132.28 -24.15 0.062 54.23 0.51 -40.74 20.17
1.75 0.87 -66.65 15.90 6.23 125.22 -23.10 0.070 49.25 0.49 -46.95 19.53
2.00 0.84 -74.93 15.59 6.02 118.41 -22.27 0.077 44.36 0.48 -53.06 18.93
2.50 0.79 -91.13 14.97 5.61 105.38 -20.92 0.090 35.36 0.44 -64.59 17.95
3.00 0.73 -107.08 14.34 5.21 93.08 -20.00 0.100 26.85 0.41 -75.32 17.17
4.00 0.64 -139.07 13.09 4.51 70.17 -18.94 0.113 11.15 0.35 -94.59 16.01
5.00 0.59 -169.70 11.90 3.93 49.03 -18.27 0.122 -2.96 0.29 -113.89 15.09
6.00 0.56 161.74 10.81 3.47 29.27 -17.79 0.129 -16.43 0.23 -134.46 14.30
7.00 0.56 133.19 9.77 3.08 10.04 -17.59 0.132 -29.47 0.17 -158.65 13.68
8.00 0.57 107.56 8.78 2.75 -8.35 -17.46 0.134 -40.80 0.14 172.14 12.29
9.00 0.60 84.16 7.75 2.44 -26.29 -17.39 0.135 -52.63 0.11 134.01 10.74
10.00 0.64 64.19 6.86 2.20 -43.56 -17.33 0.136 -63.33 0.12 95.85 9.99
11.00 0.68 45.46 5.93 1.98 -61.33 -17.27 0.137 -74.77 0.16 63.20 9.34
12.00 0.72 26.66 4.93 1.76 -78.94 -17.27 0.137 -86.46 0.22 40.01 8.57
13.00 0.74 7.70 3.80 1.55 -95.93 -17.59 0.132 -98.11 0.29 23.11 7.62
14.00 0.77 -5.93 2.68 1.36 -111.53 -17.92 0.127 -107.51 0.36 3.55 6.79
15.00 0.82 -16.54 1.63 1.21 -126.76 -18.20 0.123 -117.16 0.41 -12.09 6.76
16.00 0.82 -28.76 0.54 1.06 -142.70 -18.49 0.119 -127.03 0.47 -26.21 5.81
17.00 0.84 -40.79 -0.49 0.95 -157.02 -18.49 0.119 -137.06 0.53 -35.57 5.55
18.00 0.86 -56.40 -1.60 0.83 -172.47 -18.94 0.113 -147.50 0.58 -47.29 5.06
9
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 30 mA
Freq. Fmin ΓΓ
ΓΓ
Γopt Rn/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.11 0.87 2.7 0.18 21.6
0.9 0.15 0.81 12.1 0.17 20.2
1.0 0.16 0.80 14.5 0.16 19.9
1.5 0.22 0.73 26.3 0.15 18.7
1.8 0.25 0.69 33.4 0.15 18.0
2.0 0.27 0.66 38.1 0.14 17.7
2.5 0.33 0.60 50.6 0.13 17.0
3.0 0.39 0.54 64.2 0.12 16.2
4.0 0.52 0.45 94.0 0.10 14.8
5.0 0.64 0.39 126.5 0.07 13.5
6.0 0.77 0.34 160.6 0.05 12.4
7.0 0.90 0.33 -164.7 0.06 11.4
8.0 1.02 0.33 -130.3 0.10 10.5
9.0 1.15 0.36 -97.5 0.18 9.7
10.0 1.28 0.40 -67.0 0.30 9.1
FREQUENCY (GHz)
Figure 21. MSG/MAG and |S
21
|
2
vs.
Frequency at 2 V, 30 mA.
MSG/MAG and S
21
(dB)
02051015
MSG
MAG
S
21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 30 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -20.95 18.17 8.10 163.18 -33.56 0.021 77.39 0.49 -15.99 25.87
0.75 0.96 -32.34 18.02 7.96 153.79 -30.17 0.031 70.55 0.47 -22.00 24.10
1.00 0.94 -42.36 17.77 7.73 145.67 -27.96 0.040 65.08 0.46 -29.03 22.86
1.50 0.88 -61.09 17.18 7.22 130.36 -25.04 0.056 54.79 0.43 -42.64 21.11
1.75 0.85 -69.98 16.85 6.96 123.20 -24.01 0.063 50.12 0.41 -48.96 20.42
2.00 0.82 -78.53 16.50 6.69 116.28 -23.22 0.069 45.58 0.39 -55.19 19.86
2.50 0.76 -95.14 15.81 6.17 103.17 -21.94 0.080 37.15 0.36 -66.91 18.87
3.00 0.70 -111.48 15.11 5.69 90.88 -21.01 0.089 29.29 0.34 -77.74 18.06
4.00 0.61 -143.89 13.73 4.86 68.24 -19.83 0.102 14.76 0.28 -97.29 16.78
5.00 0.56 -174.55 12.46 4.20 47.48 -19.02 0.112 1.63 0.23 -117.24 15.74
6.00 0.55 157.19 11.31 3.68 28.10 -18.49 0.119 -10.98 0.17 -139.78 14.90
7.00 0.55 129.18 10.22 3.24 9.28 -18.13 0.124 -23.67 0.13 -169.09 14.17
8.00 0.56 104.19 9.20 2.88 -8.75 -17.79 0.129 -34.72 0.11 155.22 11.98
9.00 0.60 81.48 8.15 2.56 -26.37 -17.59 0.132 -46.33 0.11 112.23 10.82
10.00 0.64 62.07 7.24 2.30 -43.37 -17.33 0.136 -57.43 0.13 77.30 10.15
11.00 0.68 43.83 6.29 2.06 -60.90 -17.20 0.138 -68.78 0.18 51.74 9.51
12.00 0.72 25.46 5.27 1.84 -78.22 -17.14 0.139 -81.32 0.24 32.67 8.77
13.00 0.74 6.81 4.14 1.61 -94.88 -17.33 0.136 -93.11 0.31 17.81 7.87
14.00 0.77 -6.74 3.01 1.41 -110.07 -17.65 0.131 -103.06 0.38 0.45 7.08
15.00 0.82 -17.21 1.94 1.25 -125.15 -17.86 0.128 -112.88 0.43 -15.44 7.06
16.00 0.83 -29.31 0.87 1.11 -140.80 -18.06 0.125 -123.55 0.49 -29.37 6.13
17.00 0.85 -41.30 -0.15 0.98 -154.83 -18.13 0.124 -134.43 0.54 -38.55 5.89
18.00 0.87 -56.87 -1.24 0.87 -170.03 -18.56 0.118 -144.88 0.60 -49.70 5.39
10
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 10 mA
Freq. Fmin ΓΓ
ΓΓ
Γopt Rn/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.12 0.87 4.7 0.21 20.0
0.9 0.16 0.82 13.2 0.19 19.0
1.0 0.17 0.81 15.3 0.19 18.8
1.5 0.22 0.75 25.9 0.17 17.8
1.8 0.26 0.71 32.3 0.16 17.2
2.0 0.28 0.68 36.5 0.16 16.7
2.5 0.33 0.62 47.7 0.14 15.9
3.0 0.39 0.57 59.6 0.13 15.1
4.0 0.49 0.49 85.4 0.10 13.7
5.0 0.60 0.43 113.6 0.08 12.5
6.0 0.71 0.38 143.7 0.05 11.4
7.0 0.81 0.36 175.6 0.05 10.4
8.0 0.92 0.34 -151.3 0.07 9.6
9.0 1.03 0.34 -117.3 0.12 8.9
10.0 1.13 0.35 -82.7 0.21 8.4
FREQUENCY (GHz)
Figure 22. MSG/MAG and |S
21
|
2
vs.
Frequency at 3 V, 10 mA.
MSG/MAG and S
21
(dB)
02051015
MSG
MAG
S
21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 10 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -18.76 16.07 6.36 164.73 -32.77 0.023 76.79 0.65 -13.67 24.42
0.75 0.97 -29.12 15.97 6.29 155.93 -29.37 0.034 70.22 0.63 -19.08 22.70
1.00 0.95 -38.28 15.79 6.16 148.37 -27.13 0.044 64.53 0.62 -25.28 21.46
1.50 0.91 -55.52 15.34 5.85 133.87 -24.01 0.063 54.04 0.59 -37.48 19.68
1.75 0.88 -63.78 15.09 5.68 126.95 -22.97 0.071 49.13 0.57 -43.28 19.00
2.00 0.86 -71.79 14.82 5.51 120.22 -22.05 0.079 44.06 0.56 -49.01 18.43
2.50 0.81 -87.55 14.27 5.17 107.29 -20.82 0.091 34.85 0.52 -59.84 17.55
3.00 0.75 -103.15 13.71 4.85 95.00 -19.83 0.102 25.98 0.49 -69.88 16.77
4.00 0.66 -134.65 12.56 4.25 71.95 -18.71 0.116 9.56 0.42 -87.88 15.63
5.00 0.60 -165.16 11.45 3.74 50.50 -18.13 0.124 -5.10 0.35 -105.14 14.79
6.00 0.58 166.12 10.43 3.32 30.44 -17.79 0.129 -19.00 0.29 -122.61 14.11
7.00 0.56 137.25 9.44 2.97 10.91 -17.65 0.131 -32.32 0.23 -141.22 13.55
8.00 0.57 111.11 8.51 2.66 -7.80 -17.59 0.132 -43.61 0.18 -162.07 12.81
9.00 0.60 87.10 7.51 2.38 -26.05 -17.65 0.131 -55.14 0.13 172.01 10.75
10.00 0.64 66.58 6.64 2.15 -43.52 -17.65 0.131 -65.42 0.10 139.11 9.98
11.00 0.68 47.31 5.76 1.94 -61.59 -17.65 0.131 -76.27 0.11 93.44 9.32
12.00 0.71 28.18 4.81 1.74 -79.58 -17.72 0.130 -87.47 0.16 57.88 8.54
13.00 0.74 9.02 3.71 1.53 -96.96 -17.99 0.126 -98.60 0.23 35.32 7.59
14.00 0.77 -4.82 2.61 1.35 -112.95 -18.34 0.121 -107.41 0.29 13.11 6.76
15.00 0.82 -15.65 1.60 1.20 -128.77 -18.56 0.118 -116.63 0.35 -4.62 6.79
16.00 0.82 -28.00 0.51 1.06 -145.23 -18.71 0.116 -126.02 0.42 -19.61 5.79
17.00 0.84 -40.11 -0.55 0.94 -160.01 -18.71 0.116 -136.14 0.49 -29.62 5.54
18.00 0.86 -55.87 -1.68 0.82 -176.05 -19.25 0.109 -146.13 0.55 -41.92 5.05
11
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 15 mA
Freq. Fmin ΓΓ
ΓΓ
Γopt Rn/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.11 0.86 3.5 0.17 21.2
0.9 0.15 0.81 12.1 0.16 19.9
1.0 0.16 0.80 14.3 0.16 19.6
1.5 0.21 0.73 25.1 0.15 18.2
1.8 0.24 0.69 31.6 0.14 17.6
2.0 0.26 0.66 35.9 0.20 17.2
2.5 0.31 0.60 47.2 0.17 16.3
3.0 0.37 0.55 59.4 0.15 15.6
4.0 0.47 0.46 86.0 0.11 14.2
5.0 0.58 0.40 115.4 0.07 12.9
6.0 0.68 0.36 146.8 0.05 11.8
7.0 0.79 0.33 179.8 0.05 10.8
8.0 0.89 0.32 -146.1 0.07 10.0
9.0 1.00 0.32 -111.5 0.13 9.3
10.0 1.10 0.33 -76.8 0.22 8.8
FREQUENCY (GHz)
Figure 23. MSG/MAG and |S21|2 vs.
Frequency at 3 V, 15 mA.
MSG/MAG and S
21
(dB)
02051015
MSG
MAG
S
21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 15 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -19.76 17.20 7.24 164.03 -33.15 0.022 76.95 0.60 -14.39 25.17
0.75 0.96 -30.58 17.08 7.14 154.94 -29.90 0.032 69.88 0.58 -20.00 23.47
1.00 0.94 -40.14 16.86 6.97 147.12 -27.54 0.042 64.59 0.57 -26.48 22.20
1.50 0.90 -58.04 16.35 6.57 132.22 -24.58 0.059 54.00 0.54 -39.05 20.47
1.75 0.87 -66.61 16.06 6.35 125.16 -23.48 0.067 49.23 0.52 -45.00 19.78
2.00 0.84 -74.88 15.75 6.13 118.36 -22.62 0.074 44.39 0.50 -50.83 19.19
2.50 0.78 -91.02 15.13 5.71 105.32 -21.41 0.085 35.29 0.47 -61.71 18.27
3.00 0.73 -106.95 14.50 5.31 93.02 -20.45 0.102 27.00 0.44 -71.87 17.47
4.00 0.63 -138.86 13.24 4.59 70.17 -19.41 0.107 11.47 0.37 -89.81 16.32
5.00 0.58 -169.42 12.05 4.00 49.09 -18.79 0.115 -2.18 0.31 -107.23 15.42
6.00 0.56 162.05 10.97 3.53 29.39 -18.34 0.121 -15.36 0.24 -125.21 14.66
7.00 0.55 133.54 9.93 3.14 10.23 -18.06 0.125 -27.97 0.19 -145.42 14.00
8.00 0.56 107.88 8.96 2.81 -8.11 -17.92 0.127 -38.89 0.14 -168.81 12.23
9.00 0.60 84.56 7.95 2.50 -26.04 -17.86 0.128 -50.41 0.11 158.79 10.87
10.00 0.64 64.57 7.06 2.26 -43.28 -17.72 0.130 -60.57 0.09 118.59 10.16
11.00 0.68 45.84 6.16 2.03 -61.06 -17.59 0.132 -71.45 0.12 75.36 9.55
12.00 0.71 27.11 5.19 1.82 -78.75 -17.59 0.132 -83.32 0.18 46.94 8.80
13.00 0.74 8.18 4.09 1.60 -95.88 -17.79 0.129 -94.36 0.25 27.91 7.86
14.00 0.77 -5.58 2.98 1.41 -111.57 -18.06 0.125 -103.78 0.31 7.94 7.09
15.00 0.82 -16.18 1.96 1.25 -127.09 -18.27 0.122 -113.43 0.37 -8.87 7.04
16.00 0.82 -28.41 0.88 1.11 -143.31 -18.42 0.120 -123.35 0.44 -23.42 6.09
17.00 0.85 -40.49 -0.15 0.98 -157.87 -18.49 0.119 -134.06 0.50 -32.96 5.87
18.00 0.86 -56.20 -1.25 0.87 -173.65 -18.86 0.114 -144.46 0.56 -44.64 5.41
12
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 30 mA
Freq. Fmin ΓΓ
ΓΓ
Γopt Rn/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.11 0.87 3.5 0.18 21.6
0.9 0.16 0.81 12.5 0.17 20.5
1.0 0.17 0.79 14.7 0.17 20.2
1.5 0.23 0.72 25.9 0.16 18.9
1.8 0.27 0.68 32.6 0.15 18.3
2.0 0.28 0.65 37.1 0.15 17.9
2.5 0.35 0.59 49.3 0.14 17.0
3.0 0.41 0.53 62.5 0.12 16.3
4.0 0.53 0.43 91.6 0.09 14.9
5.0 0.66 0.37 123.4 0.07 13.6
6.0 0.79 0.33 157.1 0.05 12.4
7.0 0.91 0.31 -168.3 0.06 11.4
8.0 1.04 0.31 -133.7 0.10 10.6
9.0 1.17 0.33 -100.0 0.17 9.9
10.0 1.29 0.38 -68.1 0.28 9.3
FREQUENCY (GHz)
Figure 24. MSG/MAG and |S
21
|
2
vs.
Frequency at 3 V, 30 mA.
MSG/MAG and S
21
(dB)
02051015
MSG
MAG
S21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 30 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -21.01 18.45 8.36 163.08 -33.98 0.020 76.89 0.53 -15.23 26.21
0.75 0.96 -32.39 18.29 8.21 153.62 -30.46 0.030 69.94 0.51 -21.01 24.36
1.00 0.93 -42.42 18.03 7.97 145.49 -28.40 0.038 64.80 0.50 -27.72 23.22
1.50 0.88 -61.18 17.42 7.43 130.11 -25.35 0.054 54.32 0.47 -40.61 21.39
1.75 0.85 -70.01 17.09 7.15 122.91 -24.44 0.060 49.77 0.45 -46.56 20.72
2.00 0.82 -78.57 16.74 6.87 116.00 -23.61 0.066 45.15 0.43 -52.43 20.17
2.50 0.76 -95.09 16.03 6.33 102.87 -22.38 0.076 36.87 0.40 -63.37 19.21
3.00 0.70 -111.30 15.32 5.83 90.60 -21.41 0.085 29.08 0.37 -73.44 18.36
4.00 0.61 -143.48 13.93 4.97 68.04 -20.26 0.097 14.96 0.31 -91.21 17.10
5.00 0.56 -174.00 12.65 4.29 47.37 -19.58 0.105 2.38 0.25 -108.94 16.11
6.00 0.54 157.98 11.50 3.76 28.09 -19.02 0.112 -10.00 0.19 -128.04 15.26
7.00 0.54 130.06 10.42 3.32 9.32 -18.64 0.117 -22.21 0.14 -151.53 13.78
8.00 0.55 105.20 9.42 2.96 -8.66 -18.34 0.121 -32.79 0.11 179.40 12.10
9.00 0.59 82.53 8.39 2.63 -26.26 -18.06 0.125 -44.11 0.09 138.30 11.00
10.00 0.63 63.18 7.49 2.37 -43.25 -17.79 0.129 -54.57 0.09 95.15 10.36
11.00 0.67 44.96 6.56 2.13 -60.82 -17.52 0.133 -66.16 0.14 62.17 9.76
12.00 0.71 26.64 5.58 1.90 -78.23 -17.46 0.134 -78.18 0.20 39.86 9.05
13.00 0.74 7.94 4.46 1.67 -95.07 -17.65 0.131 -89.74 0.27 23.41 8.14
14.00 0.77 -5.53 3.36 1.47 -110.42 -17.86 0.128 -99.72 0.34 5.08 7.40
15.00 0.82 -16.02 2.33 1.31 -125.79 -17.99 0.126 -109.60 0.39 -11.42 7.41
16.00 0.82 -28.09 1.25 1.16 -141.72 -18.06 0.125 -120.39 0.46 -25.74 6.44
17.00 0.85 -40.02 0.23 1.03 -156.00 -18.06 0.125 -131.03 0.51 -35.29 6.19
18.00 0.87 -55.63 -0.85 0.91 -171.48 -18.49 0.119 -141.69 0.57 -46.81 5.71
13
ATF-35143 Typical Noise Parameters
VDS = 4 V, IDS = 30 mA
Freq. Fmin ΓΓ
ΓΓ
Γopt Rn/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.10 0.90 3.5 0.22 20.7
0.9 0.14 0.85 12.5 0.21 19.7
1.0 0.16 0.83 14.7 0.20 19.5
1.5 0.21 0.77 25.9 0.18 18.4
1.8 0.25 0.73 32.6 0.17 17.8
2.0 0.28 0.70 37.1 0.17 17.5
2.5 0.33 0.64 49.1 0.15 16.7
3.0 0.38 0.58 62.0 0.14 16.0
4.0 0.49 0.48 90.3 0.10 14.7
5.0 0.62 0.40 121.2 0.07 13.5
6.0 0.74 0.35 154.0 0.05 12.5
7.0 0.87 0.32 -172.2 0.06 11.5
8.0 0.99 0.31 -138.0 0.09 10.7
9.0 1.11 0.34 -104.2 0.15 10.0
10.0 1.24 0.39 -71.6 0.26 9.5
FREQUENCY (GHz)
Figure 25. MSG/MAG and |S
21
|
2
vs.
Frequency at 4 V, 30 mA.
MSG/MAG and S
21
(dB)
02051015
MSG
MAG
S21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 30 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -21.11 18.54 8.45 163.20 -33.98 0.020 77.63 0.56 -14.66 26.26
0.75 0.96 -32.57 18.38 8.30 153.72 -30.75 0.029 70.15 0.54 -20.35 24.55
1.00 0.94 -42.70 18.13 8.07 145.56 -28.64 0.037 64.68 0.53 -26.91 23.38
1.50 0.88 -61.55 17.53 7.53 130.19 -25.68 0.052 53.94 0.50 -39.45 21.61
1.75 0.85 -70.46 17.20 7.24 123.00 -24.58 0.059 49.29 0.48 -45.29 20.90
2.00 0.82 -79.07 16.84 6.95 116.04 -23.88 0.064 44.64 0.46 -50.94 20.36
2.50 0.76 -95.78 16.14 6.41 102.91 -22.62 0.074 36.30 0.43 -61.54 19.38
3.00 0.71 -112.14 15.43 5.91 90.63 -21.72 0.082 28.32 0.40 -71.17 18.58
4.00 0.62 -144.46 14.04 5.03 68.03 -20.72 0.092 13.98 0.34 -87.95 17.38
5.00 0.57 -174.93 12.76 4.34 47.35 -20.00 0.100 1.12 0.28 -104.23 16.38
6.00 0.55 157.13 11.61 3.81 28.07 -19.49 0.106 -11.07 0.22 -120.69 15.55
7.00 0.55 129.56 10.54 3.37 9.35 -19.25 0.109 -23.07 0.17 -139.29 14.19
8.00 0.57 104.96 9.55 3.00 -8.62 -18.94 0.113 -33.33 0.13 -160.54 12.47
9.00 0.60 82.47 8.53 2.67 -26.19 -18.79 0.115 -44.34 0.09 169.67 11.33
10.00 0.64 63.23 7.64 2.41 -43.13 -18.49 0.119 -54.44 0.07 128.74 10.70
11.00 0.68 45.01 6.74 2.17 -60.63 -18.27 0.122 -65.68 0.09 78.47 10.10
12.00 0.72 26.69 5.79 1.95 -78.09 -18.13 0.124 -77.35 0.15 47.96 9.40
13.00 0.74 8.00 4.71 1.72 -95.00 -18.27 0.122 -88.59 0.22 28.53 8.47
14.00 0.77 -5.46 3.64 1.52 -110.50 -18.42 0.120 -98.13 0.28 8.38 7.69
15.00 0.82 -16.18 2.65 1.36 -126.04 -18.49 0.119 -108.03 0.34 -8.46 7.76
16.00 0.82 -28.39 1.62 1.21 -142.14 -18.49 0.119 -118.41 0.40 -22.93 6.75
17.00 0.85 -40.51 0.64 1.08 -156.61 -18.49 0.119 -129.54 0.46 -32.29 6.53
18.00 0.86 -56.36 -0.44 0.95 -172.55 -18.86 0.114 -140.19 0.52 -43.97 6.00
14
ATF-35143 Typical Noise Parameters
VDS = 4 V, IDS = 60 mA
Freq. Fmin ΓΓ
ΓΓ
Γopt Rn/50 Ga
GHz dB Mag. Ang. - dB
0.5 0.22 0.84 4.4 0.29 22.5
0.9 0.30 0.78 15.6 0.29 21.3
1.0 0.32 0.77 18.4 0.28 21.0
1.5 0.42 0.70 32.4 0.26 19.8
1.8 0.48 0.65 40.8 0.25 19.2
2.0 0.52 0.63 46.4 0.24 18.8
2.5 0.63 0.56 61.0 0.21 17.8
3.0 0.73 0.51 76.6 0.19 17.0
4.0 0.94 0.44 109.9 0.13 15.5
5.0 1.15 0.40 144.8 0.09 14.1
6.0 1.35 0.39 -179.8 0.08 12.9
7.0 1.56 0.40 -145.5 0.13 11.9
8.0 1.77 0.43 -113.7 0.26 11.0
9.0 1.98 0.47 -85.6 0.48 10.3
10.0 2.18 0.53 -62.6 0.79 9.8
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S
21
|
2
vs.
Frequency at 4 V, 60 mA.
MSG/MAG and S
21
(dB)
02051015
MSG
MAG
S21
30
25
20
15
10
5
0
-5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
3. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.50 0.99 -21.27 18.15 8.09 163.09 -34.89 0.018 77.28 0.54 -13.50 26.52
0.75 0.96 -32.77 17.99 7.94 153.59 -31.70 0.026 70.40 0.53 -18.54 24.83
1.00 0.94 -42.95 17.74 7.71 145.40 -29.37 0.034 65.05 0.51 -24.50 23.55
1.50 0.88 -61.92 17.13 7.19 129.98 -26.56 0.047 55.14 0.48 -35.90 21.84
1.75 0.85 -70.88 16.79 6.91 122.76 -25.51 0.053 50.40 0.47 -41.17 21.15
2.00 0.82 -79.55 16.45 6.64 115.80 -24.73 0.058 46.34 0.45 -46.33 20.59
2.50 0.76 -96.36 15.74 6.12 102.60 -23.48 0.067 38.10 0.42 -55.86 19.61
3.00 0.70 -112.86 15.03 5.64 90.26 -22.62 0.074 30.61 0.39 -64.53 18.82
4.00 0.61 -145.47 13.64 4.81 67.52 -21.51 0.084 17.18 0.34 -79.32 17.58
5.00 0.57 -176.15 12.35 4.15 46.76 -20.82 0.091 5.47 0.29 -93.48 16.59
6.00 0.55 155.85 11.21 3.64 27.45 -20.26 0.097 -5.83 0.24 -107.07 15.74
7.00 0.55 128.25 10.14 3.21 8.68 -19.83 0.102 -17.10 0.19 -121.43 13.17
8.00 0.57 103.61 9.16 2.87 -9.34 -19.41 0.107 -26.34 0.15 -137.04 11.94
9.00 0.60 81.11 8.14 2.55 -27.02 -19.09 0.111 -36.93 0.11 -156.16 10.99
10.00 0.64 62.01 7.25 2.30 -44.01 -18.71 0.116 -46.43 0.07 178.65 10.38
11.00 0.69 43.90 6.37 2.08 -61.57 -18.27 0.122 -57.09 0.06 113.63 9.88
12.00 0.72 25.78 5.43 1.87 -79.17 -17.92 0.127 -68.92 0.10 60.75 9.26
13.00 0.75 7.31 4.37 1.65 -96.36 -17.92 0.127 -80.43 0.18 35.69 8.35
14.00 0.78 -6.12 3.30 1.46 -112.19 -17.92 0.127 -90.26 0.25 13.24 7.57
15.00 0.83 -16.62 2.29 1.30 -127.94 -17.86 0.128 -100.79 0.31 -4.12 7.78
16.00 0.84 -28.78 1.25 1.16 -144.27 -17.79 0.129 -112.14 0.39 -19.12 6.73
17.00 0.87 -40.91 0.21 1.03 -159.19 -17.79 0.129 -123.71 0.46 -28.89 6.65
18.00 0.88 -56.66 -0.92 0.90 -175.28 -17.99 0.126 -134.88 0.52 -40.92 6.06
15
Noise Parameter
Applications Information
Fmin values at 2 GHz and higher
are based on measurements while
the Fmins below 2 GHz have been
extrapolated. The Fmin values are
based on a set of 16 noise figure
measurements made at 16
different impedances using an
ATN NP5 test system. From these
measurements, a true Fmin is
calculated. Fmin represents the
true minimum noise figure of the
device when the device is pre-
sented with an impedance
matching network that trans-
forms the source impedance,
typically 50Ω, to an impedance
represented by the reflection
coefficient Γo. The designer must
design a matching network that
will present Γo to the device with
minimal associated circuit losses.
The noise figure of the completed
amplifier is equal to the noise
figure of the device plus the
losses of the matching network
preceding the device. The noise
figure of the device is equal to
Fmin only when the device is
presented with Γo. If the reflec-
tion coefficient of the matching
network is other than Γo, then the
noise figure of the device will be
greater than Fmin based on the
following equation.
NF = F
min
+ 4 R
n
|Γ
s
– Γ
o
| 2
Zo (|1 + Γ
o
|2)(1 – Γ
s
|2)
Where Rn/Zo is the normalized
noise resistance, Γo is the opti-
mum reflection coefficient
required to produce Fmin and Γs is
the reflection coefficient of the
source impedance actually
presented to the device. The
losses of the matching networks
are non-zero and they will also
add to the noise figure of the
device creating a higher amplifier
noise figure. The losses of the
matching networks are related to
the Q of the components and
associated printed circuit board
loss. Γo is typically fairly low at
higher frequencies and increases
as frequency is lowered. Larger
gate width devices will typically
have a lower Γo as compared to
narrower gate width devices.
Typically for FETs, the higher Γo
usually infers that an impedance
much higher than 50Ω is required
for the device to produce Fmin. At
VHF frequencies and even lower
L Band frequencies, the required
impedance can be in the vicinity
of several thousand ohms.
Matching to such a high imped-
ance requires very hi-Q compo-
nents in order to minimize circuit
losses. As an example at 900 MHz,
when airwwound coils (Q > 100)
are used for matching networks,
the loss can still be up to 0.25 dB
which will add directly to the
noise figure of the device. Using
muiltilayer molded inductors with
Qs in the 30 to 50 range results in
additional loss over the airwound
coil. Losses as high as 0.5 dB or
greater add to the typical 0.15 dB
Fmin of the device creating an
amplifier noise figure of nearly
0.65 dB. A discussion concerning
calculated and measured circuit
losses and their effect on ampli-
fier noise figure is covered in
Agilent Application 1085.
16
L=Lc L=Lb
R=Rb
L=Lb
R=Rb
L
CC=Ca
C
C=Cb
LOSSYL
L=Lb
R=Rb L=La*.5
L=Ld
L
L
LOSSYL
GATE_IN SOURCE
DRAIN_OUT
R
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
R=0.1 OH
LOSSYL
L=La L=Lb
R=Rb
LLOSSYL
L=Lb
R=Rb
LOSSYL
G
S
D
SOURCE
ATF-35143 SC-70 4 Lead, High Frequency Model
Optimized for 0.1 – 6.0 GHz
This model can be used as a
design tool. It has been tested on
MDS for various specifications.
However, for more precise and
accurate design, please refer to
the measured data in this data
sheet. For future improvements
Agilent reserves the right to
change these models without
prior notice.
NFETMESFET
G
MODEL=FET
W=400 µm
XX
D
XX
S
S
XX
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
IDS model
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
Gate model
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc
Parasitics
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=
Breakdown
FNC=01e+6
R=.17
P=.65
C=.2
Noise
Model scal factors (W=FET width in microns)
EQUATION Cds=0.01*W/200
EQUATION Beta=0.06*W/200
EQUATION Rd=200/W
EQUATION Rs=.5*200/W
EQUATION Cgs=0.2*W/200
EQUATION Cgd=0.04*W/200
EQUATION Lg=0.03*200/W
EQUATION Ld=0.03*200/W
EQUATION Ls=0.01*200/W
EQUATION Rc=500*200/W
*
STATZ MESFET MODEL
*
MODEL = FET
ATF-35143 Die Model
17
Part Number Ordering Information
No. of
Part Number Devices Container
ATF-35143-TR1 3000 7" Reel
ATF-35143-TR2 10000 13" Reel
ATF-35143-BLK 100 antistatic bag
Package Dimensions
Outline 43 (SOT-343/SC-70 4 lead)
E
D
A
A1
b TYP
e
E1
1.30 (0.051)
BSC
1.15 (.045) BSC
θ
h
C TYP
L
DIMENSIONS ARE IN MILLIMETERS (INCHES)
DIMENSIONS
MIN.
0.80 (0.031)
0 (0)
0.25 (0.010)
0.10 (0.004)
1.90 (0.075)
2.00 (0.079)
0.55 (0.022)
0.450 TYP (0.018)
1.15 (0.045)
0.10 (0.004)
0
MAX.
1.00 (0.039)
0.10 (0.004)
0.35 (0.014)
0.20 (0.008)
2.10 (0.083)
2.20 (0.087)
0.65 (0.025)
1.35 (0.053)
0.35 (0.014)
10
SYMBOL
A
A1
b
C
D
E
e
h
E1
L
θ
1.15 (.045) REF
1.30 (.051) REF
1.30 (.051)
2.60 (.102)
0.55 (.021) TYP 0.85 (.033)
18
Tape Dimensions
For Outline 4T
Device Orientation
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
P
P
0
P
2
F
W
C
D
1
D
E
A
0
8° MAX.
t
1
(CARRIER TAPE THICKNESS) T
t
(COVER TAPE THICKNESS)
5° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS
W
t
1
8.00 ± 0.30
0.255 ± 0.013
0.315 ± 0.012
0.010 ± 0.0005
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
T
t
5.4 ± 0.10
0.062 ± 0.001
0.205 ± 0.004
0.0025 ± 0.00004
COVER TAPE
5PX 5PX 5PX 5PX
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
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Data subject to change.
Copyright © 2002 Agilent Technologies, Inc.
Obsoletes 5968-7826EN
September 20, 2002
5988-7943EN
