Parameter Test Conditions Symbol Device Min Typ Max Unit
EMITTER
Input Forward Voltage IF= ±10 mA VFAll 1.2 1.5 V
Capacitance VF= 0 V, f = 1.0 MHz CJAll 80 pF
DETECTOR
Breakdown Voltage
Collector to Emitter IC= 1.0 mA, IF= 0 BVCEO All 30 V
Collector to Base IC= 100 µA, IF= 0 BVCBO All 70 V
Emitter to Base IE= 100 µA, IF= 0 BVEBO All 5 V
Emitter to Collector IE= 100 µA, IF= 0 BVECO All 7 V
Leakage Current
Collector to Emitter VCE = 10 V, IF= 0 ICEO H11AA1,3,4 50 nA
H11AA2 200
Capacitance
Collector to Emitter VCE = 0, f = 1 MHz CCE All 10 pF
Collector to Base VCE = 0, f = 1 MHz CCB All 80 pF
Emitter to Base VCE = 0, f = 1 MHz CEB All 15 pF
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA= 25°CUnless otherwise specified.)
Characteristic Test Conditions Symbol Min Typ Max Units
Package Capacitance input/output VI-O = 0, f = 1 MHz CI-O 0.7 pF
Isolation Voltage f = 60 Hz, t = 1 min. VISO 5300 V
Isolation Resistance VI-O = 500 VDC RISO 1011 Ω
ISOLATION CHARACTERISTICS
Characteristics Test Conditions Symbol Device Min Typ Max Units
H11AA4 100
Current Transfer Ratio, IF= ±10 mA, VCE = 10 V CTRCE H11AA3 50 %
Collector to Emitter H11AA1 20
H11AA2 10
Current Transfer Ratio, Symmetry IF= ±10 mA, VCE = 10 V (Figure.8) All .33 3.0 %
Saturation Voltage IF= ±10 mA, ICE = 0.5 mA VCE(SAT) All .40 V
Collector to Emitter
TRANSFER CHARACTERISTICS (TA= 25°C Unless otherwise specified.)
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AC INPUT/PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA1 H11AA3 H11AA2 H11AA4