MSC1026.PDF 02-24-99
2N3719
ABSOLUTE MAXIMUM RATINGS:ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
VALUE
UNITS
V
CEO*
Collector-Emitter Voltage 40 Vdc
VCB*Collector-Base Voltage 40 Vdc
VEB*Emitter-Base Voltage 4.0 Vdc
I
C*
Peak Collector Current 10 Adc
IC*Continuous Collector Current 3.0 Adc
IB*Base Current 0.5 Adc
T
STG*
Storage Temperature -65 to 200 °°C
TJ*Operating Junction Temperature -65 to 200 °°C
PD*Total Device Dissipation
TC = 25°°C
Derate above 25°°C
6.0
34.3
Watts
mW/
°°
C
PD*
θθ JC
Total Device Dissipation
TA = 25°°C
Derate above 25°°C
Thermal Resistance
Junction to Case
Junction to Ambient
1.0
5.71
29
175
Watts
mW/°°C
°°C/W
°°C/W
Silicon PNP
Power Transistors
FEATURES:
• Collector-Emitter Sustaining Voltage:
VCEO(SUS) = 40 Vdc (Min) - 2N3719
• DC Current Gain:
hFE = 25-180 @ IC = 1.0 Adc
• Low Collector-Emitter Saturation Voltage:
VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc
• High Current-Gain - Bandwidth Product:
fT = 90 MHz (Typ)
TO-5
APPLICATIONS:
• High-Speed Switching
• Medium-Current Switching
• High-Frequency Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. They are intended for
use in Commercial, Industrial, and Military power switching, amplifier, and
regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized
to further increase the SOA capability and inherent reliability of these
devices. The temperature range to 200°°C permits reliable operation in high
ambients, and the hermetically sealed package insures maximum reliability
and long life.
* Indicates JEDEC registered Data.
MSC1026.PDF 02-24-99
2N3719
ELECTRICAL CHARACTERISTICS:ELECTRICAL CHARACTERISTICS:
(25°°Case Temperature Unless Otherwise Noted) VALUE
SYMBOL CHARACTERISTIC TEST CONDITIONS Min. Max. Units
VCEO(sus)* Collector-Emitter
Sustaining Voltage IC = 20 mAdc, IB = 0 (Note 1) 40 ---- Vdc
ICEX*Collector Cutoff Current VCE = 40 Vdc, VBE(off) = 2.0 Vdc
VCE = 40 Vdc, VBE(off) = 2.0 Vdc, TC = 150°°C----
---- 10
1.0 µAdc
mAdc
ICBO* Collector Cutoff Current VCB = 40 Vdc, IE = 0 ---- 10 µAdc
IEBO*Emitter Cutoff Current VBE = 4.0 Vdc, IC = 0 ---- 1.0 mAdc
hFE*DC Current Gain
(Note 1) IC = 500 mAdc, VCE = 1.5 Vdc
IC = 1.0 Adc, VCE = 1.5 Vdc
IC = 1.0 Adc, VCE = 1.5 Vdc, TC = - 40°°C
20
25
15
----
180
----
----
----
----
VCE(sat)*Collector-Emitter
Saturation Voltage
(Note 1)
IC = 1.0 Adc, IB = 100 mAdc, TC = - 40°°C to + 100°°C
IC = 3.0 Adc, IB = 300 mAdc, TC = - 40°°C to + 100°°C----
----
0.75
1.5
Vdc
Vdc
VBE(sat)*Base-Emitter Saturation
Voltage
(Note 1)
IC = 1.0 Adc, IB = 100 mAdc, TC = - 40°°C to + 100°°C
IC = 3.0 Adc, IB = 300 mAdc, TC = - 40°°C to + 100°°C----
----
1.5
2.3
Vdc
Vdc
fT*Current-Gain Bandwidth
Product
(Note 2)
IC = 500 mAdc, VCE = 10 Vdc, ftest = 30 MHz 60 ---- MHz
Cob*Output Capacitance VCB = 10 Vdc, IE = 0, f = 0.1 MHz ---- 120 pF
Cib*Input Capacitance VEB = 0.5 Vdc, IC = 0, f = 0.1 MHz ---- 1000 pF
ton*Turn-on Time VCC = 12 Vdc, VBE(off) = 0, IC = 1.0 Adc, IB1 = 0.1 Adc ---- 100 ns
toff*Turn-off Time VCC = 12 Vdc, IC = 1.0 Adc, IB1 = IB2 = 100 mAdc ---- 400 ns
Note 1: Pulse Test: Pulse width ≤≤ 300µµS, Duty Cycle = 2.0%.
Note 2: fT = | hfe | * ftest
* Indicates JEDEC registered data
MSC1026.PDF 02-24-99
2N3719
PACKAGE MECHANICAL DATA:PACKAGE MECHANICAL DATA:
NOTE: DIMENSIONS IN [ ] = MILLIMETERS
Ø.305 [7.75]
Ø.335 [8.51]
1.500 [38.10] MIN
.010 [.254]
.030 [.762]
.240 [6.09]
.260 [6.60]
.100 [2.54]
.100 [2.54]
.200 [5.08]
. 029 [.736]
.045 [1.14]
.031 [.787]
45°
Ø.335 [8.51]
Ø.370 [9.40]
Ø.017 [.432]
+.002
-.001 [+.051]
[.025]
