A Product Line of Diodes Incorporated ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Product Summary Features BVDSS RDS(ON) Max 100V 700m @ VGS = 10V 900m @ VGS = 6V * * * * * * * ID TA = +25C (Note 6) 0.76A 0.67A Low On-Resistance Low Threshold Fast Switching Speed Low Gate Drive Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications * * * * Mechanical Data * * * * * DC-DC Converters Power Management Functions Motor Control Disconnect switches Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.008 grams (approximate) UL D SOT23 S G D S Device Symbol Top View G Top View Pin-Out Ordering Information (Note 4) Part Number ZXMN10A07FTA Notes: Marking 7N1 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated's definitions of Halogen and Antimony free,"Green" and Lead-Free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com Marking Information 7N1 = Product Type Marking Code ZXMN10A07F Document number: DS33564 Rev. 6 - 2 1 of 7 www.diodes.com August 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A07F Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current @ VGS = 10V; @ VGS = 10V; @ VGS = 10V; @ VGS = 10V; Symbol VDSS VGSS Value 100 20 Unit V V ID 0.8 0.6 0.5 0.7 A IDM IS ISM 3.5 0.5 3.5 A A A Symbol PD PD RJA RJA RJL TJ, TSTG Value 625 806 200 155 194 -55 to +150 Unit mW mW C/W C/W C/W C TA = +25C (Note 6) TA = +70C (Note 6) TA = +100C (Note 6) TA = +25C (Note 5) Pulsed Drain Current (Note 7) Continuous Source Current (Body Diode) (Note 6) Pulsed Source Current (Body Diode) (Note 7) Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Leads (Note 8) Operating and Storage Temperature Range Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t 10 sec. 7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). Max Power Dissipation (W) Thermal Characteristics ID Drain Current (A) RDS(on) 1 Limited 100m DC 1s 100ms 10m 10ms Single Pulse T amb=25C 1m 1 1ms 100s 10 100 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 VDS Drain-Source Voltage (V) 0 20 Maximum Power (W) Thermal Resistance (C/W) T amb=25C D=0.5 100 Single Pulse D=0.2 D=0.05 D=0.1 0 100 1m 10m 100m 1 10 100 1k 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document number: DS33564 Rev. 6 - 2 100 120 140 160 Single Pulse T amb=25C Pulse Width (s) ZXMN10A07F 80 Derating Curve 150 50 60 Temperature (C) Safe Operating Area 200 40 2 of 7 www.diodes.com Pulse Power Dissipation August 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A07F Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25C Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 -- -- -- -- -- -- 1.0 100 V A nA VGS = 0V, ID = 250A VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) 2 RDS (ON) -- gfs VSD -- -- 4 700 900 -- 0.95 V Static Drain-Source On-Resistance (Note 9) -- 540 700 1.6 0.85 VDS = VGS, ID = 250A VGS = 10V, ID = 1.5A VGS = 6V, ID = 1A VDS = 15V, ID = 1A TJ = +25C, IS = 1.5A, VGS = 0V Ciss Coss Crss Rg Qg Qgs Qgd trr Qrr tD(on) tr tD(off) tf -- -- -- -- -- -- -- -- -- -- -- -- -- 138 12 6 2 2.9 0.7 1 27 12 1.8 1.5 4.1 2.1 280 25 12 4 6 1.5 2 60 -- -- -- -- -- Forward Transconductance (Notes 9 & 11) Diodes Forward Voltage (Note 9) DYNAMIC CHARACTERISTICS Input Capacitance (Notes 10 & 11) Output Capacitance (Notes 10 & 11) Reverse Transfer Capacitance (Notes 10 & 11) Gate Resistance (Notes 10 & 11) Total Gate Charge (Notes 10 & 11) Gate-Source Charge (Notes 10 & 11) Gate-Drain Charge (Notes 10 & 11) Reverse Recovery Time (Note 11) Reverse Recovery Charge (Note 11) Turn-On Delay Time (Notes 10 & 11) Turn-On Rise Time (Notes 10 & 11) Turn-Off Delay Time (Notes 10 & 11) Turn-Off Fall Time (Notes 10 & 11) Notes: m S V Test Condition pF VDS = 50V, VGS = 0V, f = 1.0MHz f = 1MHz, VGS = 0V, VDS = 0V nC VGS = 10V, VDS = 50V, ID = 1A ns nC TJ = +25C, IF = 1.8A, di/dt = 100A/s ns VGS = 10V, VDD = 50V, RG = 6 , ID = 1A 9. Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. 10. Switching characteristics are independent of operating junction temperature. 11. For design aid only, not subject to production testing. ZXMN10A07F Document number: DS33564 Rev. 6 - 2 3 of 7 www.diodes.com August 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A07F Typical Characteristics 10V 7V 1 5V 0.1 4.5V VGS 0.01 4V 0.1 10V T =150C 6V 1 ID Drain Current (A) ID Drain Current (A) T =25C 7V 6V 1 5V 4.5V 0.1 4V VGS 3.5V 0.01 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 2.0 1.8 Normalised RDS(on) and VGS(th) ID Drain Current (A) 1 T =150C 0.1 T =25C VDS =10V 0.01 3 4 5 6 1.2 1.0 VGS(th) 0.8 0.6 VGS =VDS ID =250uA 0.4 0.2 0.0 -50 0 50 100 150 Tj Junction Temperature (C) Typical Transfer Characteristics Normalised Curves v Temperature 10 10 4.5V 6V 5V 1 VGS 7V 10V T =25C 0.1 ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance () R DS(on) 1.4 VGS Gate-Source Voltage (V) 0.01 VGS =10V ID =1.5A 1.6 T =150C 1 T =25C 0.1 0.4 1 On-Resistance v Drain Current ZXMN10A07F Document number: DS33564 Rev. 6 - 2 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) ID Drain Current (A) Source-Drain Diode Forward Voltage 4 of 7 www.diodes.com August 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A07F 200 180 160 140 120 100 80 60 40 20 0 10 VGS = 0V f = 1MHz CISS COSS 1 CRSS 10 100 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) C Capacitance (pF) Typical Characteristics (cont.) ID = 1.0A 8 6 VDS = 50V 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits ZXMN10A07F Document number: DS33564 Rev. 6 - 2 5 of 7 www.diodes.com August 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A07F Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X ZXMN10A07F Document number: DS33564 Rev. 6 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E 6 of 7 www.diodes.com August 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A07F IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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