June 2009 Doc ID 15317 Rev 3 1/18
18
STx42N65M5
N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V Power MOSFET
in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
Features
■TO-220 worldwide best RDS(on)
■Higher VDSS rating
■High dv/dt capability
■Excellent switching performance
■Easy to drive
■100% avalanche tested
Application
■Switching applications
Description
MDmesh™ V is a revolutionary Power MOSFET
technology based on an innovative proprietary
vertical process, which is combined with
STMicroelectronics’ well-known PowerMESH™
horizontal layout structure. The resulting product
has extremely low on-resistance, which is
unmatched among silicon-based Power
MOSFETs, making it especially suitable for
applications which require superior power density
and outstanding efficiencies.
Figure 1. Internal schematic diagram
Type VDSS @
TJmax
RDS(on)
max ID
STB42N65M5
STF42N65M5
STI42N65M5
STP42N65M5
STW42N65M5
710 V
710 V
710 V
710 V
710 V
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
33 A
33 A (1)
33 A
33 A
33 A
1. Limited only by maximum temperature allowed
12
3
123
1
3
TO-220FP D²PAK TO-220
123
TO-247
123
I²PAK
!-V
$
'
3
Table 1. Device summary
Order codes Marking Package Packaging
STB42N65M5
STF42N65M5
STI42N65M5
STP42N65M5
STW42N65M5
42N65M5
42N65M5
42N65M5
42N65M5
42N65M5
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Tape and reel
Tu b e
Tu b e
Tu b e
Tu b e
www.st.com
Contents STx42N65M5
2/18 Doc ID 15317 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STx42N65M5 Electrical ratings
Doc ID 15317 Rev 3 3/18
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220, TO-247
D²PAK, I²PAK TO-220FP
VGS Gate- source voltage ± 25 V
IDDrain current (continuous) at TC = 25 °C 33 33 (1)
1. Limited only by maximum temperature allowed
A
IDDrain current (continuous) at TC = 100 °C 20.8 20.8 (1) A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 132 132 (1) A
PTOT Total dissipation at TC = 25 °C 190 40 W
IAR
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)11 A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V) 950 mJ
dv/dt (3)
3. ISD ≤ 33 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS
Peak diode recovery voltage slope 15 V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
-- 2500 V
Tstg Storage temperature -55 to 150 °C
TjMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
D²PAK I²PAK TO-220 TO-247 TO-220FP
Rthj-case
Thermal resistance junction-
case max 0.66 3.1 °C/W
Rthj-amb
Thermal resistance junction-
ambient max -- 62.5 50 62.5 °C/W
Rthj-pcb
Thermal resistance junction-pcb
max 30 -- -- -- -- °C/W
Tl
Maximum lead temperature for
soldering purpose 300 °C
Electrical characteristics STx42N65M5
4/18 Doc ID 15317 Rev 3
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 1 mA, VGS = 0 650 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 25 V 100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on
Static drain-source on
resistance VGS = 10 V, ID = 16.5 A 0.070 0.079 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 -
4650
110
3.2
-
pF
pF
pF
Co(er)(1)
1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS
Equivalent output
capacitance energy
related
VGS = 0, VDS = 0 to 80%
V(BR)DSS
-100-pF
Co(tr)(2)
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS
Equivalent output
capacitance time
related
VGS = 0, VDS = 0 to 80%
V(BR)DSS
-285-pF
RG
Intrinsic gate
resistance f = 1 MHz open drain - 1.1 - Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 16.5 A,
VGS = 10 V
(see Figure 20)
-
100
26
38
-
nC
nC
nC
STx42N65M5 Electrical characteristics
Doc ID 15317 Rev 3 5/18
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 400 V, ID = 20 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
-
61
24
65
13
-
ns
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed) -33
132
A
A
VSD (2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 33 A, VGS = 0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 33 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 24)-
400
7
35
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 33 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 24)
-
532
10
38
ns
µC
A
Electrical characteristics STx42N65M5
6/18 Doc ID 15317 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220,
D²PAK, I²PAK
Figure 3. Thermal impedance for TO-220,
D²PAK, I²PAK
Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247
Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP
I
D
100
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
AM01565v1
I
D
100
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
AM03246v1
I
D
100
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
0.01
AM01566v1
STx42N65M5 Electrical characteristics
Doc ID 15317 Rev 3 7/18
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations Figure 13. Output capacitance stored energy
ID
30
20
10
0010 VDS(V)
(A)
515
40
VGS=10V
6V
6.5V
7V
7.5V
8V
70
60
50
80
AM01589v1 ID
40
30
20
04VGS(V)
6
(A)
359
50
60
10
70
80
VDS=20V
78
AM01590v1
VGS
6
4
2
0020 Qg(nC)
(V)
80
8
40 60
10
VDD=520V
VGS=10V
ID=16.5A
100 120
300
200
100
0
400
500
VGS
VDS
VDS
(V)
AM01569v1 RDS(on)
0.072
0.070
0.068
0.066
020 ID(A)
(Ω)
10 30
0.074
0.076
0.064
VGS=10V
AM01568v1
C
1000
100
10
1
10 VDS(V)
(pF)
100
10000
Ciss
Coss
Crss
1
AM01570v1 Eoss
6
4
2
0
0100 VDS(V)
(µJ)
400
8
200 300
10
12
500 600
14
16
AM03231v1
Electrical characteristics STx42N65M5
8/18 Doc ID 15317 Rev 3
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
Figure 18. Switching losses vs gate resistance
(1)
1. Eon including reverse recovery of a SiC diode
VGS(th)
0.9
0.8
0.7
0.6
-50 0TJ(°C)
(norm)
1.0
50 100
1.1
ID = 250 µA
AM01571v1 R
DS(on)
-50 0T
J
(°C)
(norm)
100
0.5
1.0
1.5
2.0
50
I
D
= 16.5 A
V
GS
= 10 V
0
AM01573v1
V
SD
010 I
SD
(A)
(V)
525
15 20
0.2
0.3
0.4
0.5
0.6
0.7
0.8
30
0.9
1.0
T
J
=150°C
T
J
=25°C
T
J
=-25°C
AM01574v1
BV
DSS
-50 0T
J
(°C)
(norm)
50 100
0.95
1.00
1.05
0.90
AM01572v1
I
D
= 1 mA
E
300
200
100
0020 RG(Ω)
(µJ)
10 30
400
500
600
515 25 3540 45
ID=20A
VDD=400V
L=50µH
Eon
Eoff
AM01575v1
STx42N65M5 Test circuits
Doc ID 15317 Rev 3 9/18
3 Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test
circuit
Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.31000
µFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STx42N65M5
10/18 Doc ID 15317 Rev 3
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
STx42N65M5 Package mechanical data
Doc ID 15317 Rev 3 11/18
TO-220 mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
b0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c0.480.70 0.0190.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F1.231.32 0.0480.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L1314 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
∅P3.75 3.85 0.147 0.151
Q2.65 2.95 0.104 0.116
Package mechanical data STx42N65M5
12/18 Doc ID 15317 Rev 3
Dim. mm.
Min. Typ. Max.
A4.855.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b23.0 3.40
c0.40 0.80
D19.85 20.15
E 15.45 15.75
e5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S5.50
TO-247 mechanical data
STx42N65M5 Package mechanical data
Doc ID 15317 Rev 3 13/18
Dim.
mm
.xaM.pyT.niM
6.44.4A
7.25.2B
57.25.2D
7.054.0E
157.0F
07.151.11F
5.151.12F
2.559.4G
7.24.21G
4.0101H
612L
6.036.823L
6.018.94L
6.39.25L
4.619.516L
3.997L
2.33aiD
7012510_Rev_J
AB
H
Dia
L7
D
E
L6 L5
L2
L3
L4
F1 F2
F
G
G1
TO-220FP mechanical data
Package mechanical data STx42N65M5
14/18 Doc ID 15317 Rev 3
I²PAK (TO-262) mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
A1 2.40 2.72 0.094 0.107
b0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.49 0.70 0.019 0.027
c2 1.231.320.0480.052
D8.95 9.350.352 0.368
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
E 10 10.40 0.3930.410
L1314 0.511 0.551
L1 3.50 3.930.137 0.154
L2 1.27 1.40 0.050 0.055
STx42N65M5 Package mechanical data
Doc ID 15317 Rev 3 15/18
D²PAK (TO-263) mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
A1 0.030.230.001 0.009
b0.70 0.93 0.027 0.037
b2 1.14 1.70 0.045 0.067
c 0.45 0.60 0.017 0.024
c2 1.231.360.0480.053
D8.959.350.352 0.368
D1 7.50 0.295
E 10 10.40 0.3940.409
E1 8.50 0.334
e 2.54 0.1
e1 4.88 5.280.1920.208
H15 15.850.5900.624
J1 2.492.690.099 0.106
L2.292.790.090 0.110
L1 1.27 1.40 0.05 0.055
L2 1.30 1.75 0.051 0.069
R 0.4 0.016
V2 0° 8°0° 8°
0079457_M
Packaging mechanical data STx42N65M5
16/18 Doc ID 15317 Rev 3
5 Packaging mechanical data
TAPE AND REEL SHIPMENT
D2PAK FOOTPRINT
DIM. mm inch
MIN. MAX. MIN. MAX.
A330 12.992
B1.5 0.059
C12.813.2 0.504 0.520
D20.2 0795
G 24.4 26.4 0.960 1.039
N100 3.937
T30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.4130.421
B0 15.7 15.9 0.6180.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E1.651.85 0.065 0.073
F11.4 11.6 0.449 0.456
K0 4.85.0 0.189 0.197
P0 3.9 4.1 0.1530.161
P1 11.9 12.1 0.4680.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T0.250.35 0.00980.0137
W 23.7 24.30.933 0.956
TAPE MECHANICAL DATA
STx42N65M5
18/18 Doc ID 15317 Rev 3
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