SPD08P06P G
SIPMOS® Power-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
• 175°C operating temperature
• Pb-free lead finishing; RoHS compliant
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C A
TA=100 °C
Pulsed drain current ID,pulse TA=25 °C
Avalanche energy, single pulse EAS ID=8.83 A, RGS=25 mJ
Avalanche energy, periodic limited by
Tjmax
EAR 4.2
Reverse diode dv/dtdv/dt
ID=8.83 A, VDS=48 V,
di/dt=-200 A/µs,
Tj,max=175 °C
kV/µs
Gate source voltage VGS V
Power dissipation Ptot TA=25 °C W
Operating and storage temperature Tj, Tstg °C
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1 55/175/56
"-55 ... +175"
±20
-6
260 °C
-8.83
-6.25
42
Value
70
-35.32
steady state
VDS -60 V
RDS(on),max 0.3
ID-8.8 A
Product Summary
PG-TO252-3
Type Package Tape and reel information Marking Lead free Packing
SPD08P06PGPG-TO252-3
Rev 1.92 page 1 2012-09-10
1000 pcs / reel 08P06P Yes
° Qualified according to AEC Q101
Non dry
SPD08P06P G G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - case
R thJC
- - K/W
Thermal resistance,
junction - ambient,leaded R thJA - - -
SMD version, device on PCB:
R thJA
minimal footprint - - 75 K/W
6 cm2 cooling area1) --70
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=-250 µA -60 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=-250 µA -2.1 -3.0 -4
Zero gate voltage drain current IDSS
VDS=-60 V, VGS=0 V,
Tj=25 °C - -0.1 -1 µA
VDS=-60 V, VGS=0 V,
Tj=150 °C - -10 -100
Gate-source leakage current IGSS VGS=-20 V, VDS=0 V - -10 -100 nA
Drain-source on-state resistance RDS(on) VGS=-6.2 V, ID=-10 A - 230 300 m
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=-6.2 A 2.5 4.9 - S
1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm
2 ( one layer, 70µ, thick) copper area for drain connection.
PCB is vertical without blown air
.
Values
Rev 1.92 page 2 2012-09-10
3.6
50
SPD08P06P G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 335 420 pF
Output capacitance Coss - 105 135
Reverse transfer capacitance Crss -6595
Turn-on delay time td(on) - 16.0 24.0
Rise time tr- 46.0 69
Turn-off delay time td(off) -4872
Fall time tf-1421
Gate Charge Characteristics
Gate to source charge Qgs - -1.9 -2.6 nC
Gate to drain charge Qgd --5-8
Gate charge total Qg- -10 -13
Gate plateau voltage Vplateau --6-V
Reverse Diode
Diode continuous forward current IS- - -8.80 A
Diode pulse current IS,pulse - - -35.3
Diode forward voltage VSD
VGS=0 V, IF=-8.83 A,
Tj=25 °C - -0.98 -1.55 V
Reverse recovery time trr -6090ns
Reverse recovery charge Qrr - 100 150 nC
TA=25 °C
Values
VGS=0 V, VDS=-25 V,
f=1 MHz
VDD=-30 V, VGS=-
10 V, ID=-6.2 A,
RG=6
VDD=-48 V, ID=-8.8 A,
VGS=0 to -10 V
VR=30 V, IF=|IS|,
diF/dt=100 A/µs
Rev 1.92 page 3 2012-09-10
SPD08P06P G
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); |VGS|10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
102
101
100
10-1
10-2
-V DS [V]
-I D [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
102
101
100
10-1
10-2
10-3
10-4
10-5
101
100
10-1
tp [s]
ZthJS [K/W]
0
10
20
30
40
0 40 80 120 160
TA [°C]
Ptot [W]
0
1
2
3
4
5
6
7
8
9
0 40 80 120 160
TA [°C]
-I D [A]
Rev 1.92 page 4 2012-09-10
SPD08P06P G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
-6 V
-5.5 V
-4 V
-4.5 V
-5 V
-7 V
-10 V
-20V
0
100
200
300
400
500
600
700
800
900
1000
0 2 4 6 8 10 12 14
-I D [A]
RDS(on) [m]
25 °C
125 °C
0
1
2
3
4
5
6
012345678
-V GS [V]
-I D [A]
0
1
2
3
4
5
6
0246810
-I D [A]
gfs [S]
-4 V
-4.5 V
-5V
-5.5 V
-6 V
-7 V
-20 V
-10 V
0
3
6
9
12
15
18
012345678
-V DS [V]
-I D [A]
Rev 1.92 page 5 2012-09-10
SPD08P06P G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=-6.2 A; VGS=-10 V VGS(th)=f(Tj); VGS=VDS; ID=-250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ.
98 %
0
100
200
300
400
500
600
700
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [m]
Ciss
Coss
Crss
103
102
101
0 5 10 15 20 25
-V DS [V]
C [pF]
typ.
min.
max.
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60 -20 20 60 100 140 180
Tj [°C]
-V GS(th) [V]
25 °C, typ
175 °C, typ
25 °C, 98%
175 °C, 98%
101
100
10-1
10-2
0 0.5 1 1.5 2 2.5 3
-V SD [V]
IF [A]
Rev 1.92 page 6 2012-09-10
SPD08P06P G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 VGS=f(Qgate); ID=-8.8 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage
VBR(DSS)=f(Tj); ID=-250 µA
50
55
60
65
70
-60 -20 20 60 100 140 180
Tj [°C]
-V BR(DSS) [V]
25 °C
100 °C
125 °C
103
102
101
100
101
100
tAV [µs]
-I AV [A]
12 V
30 V
48 V
0
2
4
6
8
10
12
14
16
03691215
Qgate [nC]
VGS [V]
Rev 1.92 page 7 2012-09-10
Rev 1.92 page 8 2012-09-10
SPD08P06P G
Package outline: PG-TO252-3
Rev 1.92 page 9 2012-09-10
SPD08P06P G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.
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If they fail, it is reasonable to assume that the health of the user or other persons may be
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