TECHNICAL DATA 2N3867 JAN, JTX, JTXV 2N3867S JAN, JTX, JTXV 2N3868 JAN, JTX, JTXV 2N3868S JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/350 PNP SILICON SWITCHING TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Power Dissipation @ TA = 250C(1) @ TC = 250C(2) Operating & Storage Junction Temperature Range Symbol 2N3867 2N3867S 2N3868 2N3868S Units VCEO VCBO VEBO IC PT 40 40 60 60 Vdc Vdc Vdc Adc W W 4.0 3.0 1.0 10 TOP, Tstg -65 to +200 Symbol Max. 17.5 2N3867, 2N3868 TO-5 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 57.1 mW/0C for TC > +250C RJC 2N3867S, 2N3868S TO-39 (TO-205AD) Unit 0 C/W ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N3867, S 2N3868, S V(BR)CBO 40 60 Vdc 2N3867, S 2N3868, S V(BR)CEO 40 60 Vdc V(BR)EBO 4.0 Vdc OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 Adc Collector-Emitter Breakdown Voltage IC = 20 mAdc Emitter-Base Breakdown Voltage IE = 100 Adc Collector-Emitter Cutoff Current VEB = 2.0 Vdc, VCE = 40 Vdc VEB = 2.0 Vdc, VCE = 60 Vdc 2N3867, S 2N3868, S 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 ICEX 1.0 1.0 Adc 03/98 REV: D Page 1 of 2 2N3867, S, 2N3868, S, JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Symbol Min. hFE 50 35 40 30 25 20 20 Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 500 mAdc, VCE = 1.0 Vdc IC = 1.5 Adc, VCE = 2.0 Vdc IC = 2.5 Adc, VCE = 3.0 Vdc IC = 3.0 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 500 mAdc, IB = 50 mAdc IC = 1.5 Adc, IB = 150 mAdc IC = 2.5 Adc, IB = 250 mAdc Base-Emitter Saturation Voltage IC = 500 mAdc, IB = 50 mAdc IC = 1.5 Adc, IB = 150 mAdc IC = 2.5 Adc, IB = 250 mAdc 2N3867, S 2N3868, S 2N3867, S 2N3868, S 2N3867, S 2N3868, S All Types VCE(sat) VBE(sat) 200 150 0.5 0.75 1.5 Vdc 1.0 1.4 2.0 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short Circuit Forward Current Transfer Ratio IC = 100 mAdc, VCE = 5.0 Vdc, f = 20 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz Input Capacitance VEB = 3.0 Vdc, IC = 0, 100 kHz f 1.0 MHz hfe 3.0 12 Cobo 120 pF Cibo 800 pF d r t s t f 35 65 500 100 s s s s on 100 s t 600 s SWITCHING CHARACTERISTICS Delay Time VCC = 30 Vdc, VEB = 0, Rise Time IC = 1.5 Adc, IB1 = 150 mAdc Storage Time VCC = 30 Vdc, VEB = 0, Fall Time IC = 1.5Adc, IB1 = IB2 = 150 mAdc Turn-On Time VCC = 30, IC = 1.5 Adc, IB = 150 mAdc Turn-Off Time VCC = 30, IC = 1.5 Adc, IB = 150 mAdc t t t off SAFE OPERATING AREA DC Tests TC = 250C, 1 Cycle, t = 1.0 s Test 1 VCE = 3.33 Vdc, IC = 3.0 Adc Test 2 VCE = 40 Vdc, IC = 160 mAdc 2N3867, S VCE = 60 Vdc, IC = 80 mAdc 2N3868, S (3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 03/98 REV: D Page 2 of 2