www.fairchildsemi.com 2 OF 4 6/01/01 DS300306
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Collector-Emitter Breakdown IC= 10 mA, Ee = 0 BV CEO 25 — V
Emitter-Base Breakdown IE= 100 µA, Ee = 0 BV EBO 12 — V
Collector-Base Breakdown IC= 100 µA, Ee = 0 BVCBO 25 — V
Collector-Emitter Leakage VCE = 12 V, Ee = 0 ICEO — 100 nA
Reception Angle at 1/2 Sensitivity θ±8 Degrees
On-State Collector Current L14F1 Ee = .125 mW/cm2, VCE = 5 V(7) IC(ON) 7.5 — mA
On-State Collector Current L14F2 Ee = .125 mW/cm2, VCE = 5 V(7)IC(ON) 2.5 mA
Rise Time IC= 10 mA, VCC = 5 V, RL=100 Ωtr300 µs
Fall Time IC= 10 mA, VCC = 5 V, RL=100 Ωtf250 µs
ELECTRICAL / OPTICAL CHARACTERISTICS (TA=25°C) (All measurements made under pulse conditions)
Parameter Symbol Rating Unit
Operating Temperature TOPR -65 to +125 °C
Storage Temperature TSTG -65 to +150 °C
Soldering Temperature (Iron)(3,4,5 and 6) TSOL-I 240 for 5 sec °C
Soldering Temperature (Flow)(3,4 and 6) TSOL-F 260 for 10 sec °C
Collector to Emitter Breakdown Voltage VCEO 25 V
Collector to Base Breakdown Voltage VCBO 25 V
Emitter to Base Breakdwon Voltage VEBO 12 V
Power Dissipation(TA= 25°C)(1) PD300 mW
Power Dissipation(TC= 25°C)(2) PD600 mW
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 0.05 mW/cm2is approximately
equivalent to a tungsten source, at 2870°K, of 0.2 mW/cm2.
L14F1 L14F2
HERMETIC SILICON
PHOTODARLINGTON