PD-96913 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless) IRHMJ57260SE 200V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHMJ57260SE 100K Rads (Si) RDS(on) ID 0.049 35A* TO-254AA Tabless International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electically Isolated Ceramic Eyelets Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Units Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range 35* 28 140 208 1.67 20 320 35 20.8 10 -55 to 150 Pckg. Mounting Surface Temp. Weight 300 (for 5s) 8.0 (Typical) A W W/C V mJ A mJ V/ns o C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 12/24/04 IRHMJ57260SE Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage 200 -- -- V -- 0.27 -- V/C -- -- 0.049 2.5 35 -- -- -- -- -- -- 4.5 -- 10 25 V S( ) -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 100 -100 165 45 75 35 125 80 50 -- BVDSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 28A A nC VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 28A A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 100V ns VDD = 100V, ID = 35A VGS =12V, RG = 2.35 BVDSS A nA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 5200 885 50 -- -- -- pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- 35* 140 1.2 450 6.5 Test Conditions A V ns C Tj = 25C, IS = 35A, VGS = 0V A Tj = 25C, IF = 35A, di/dt 100A/s VDD 25V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units -- -- -- -- 0.60 0.21 -- -- 48 Test Conditions C/W Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHMJ57260SE International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Units Test Conditions V A VGS = 0V, ID = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20V VDS=160V, VGS=0V 0.044 VGS = 12V, ID = 28A -- 0.049 VGS = 12V, ID = 28A -- 1.2 V VGS = 0V, ID = 35A 100K Rads (Si) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-254) Diode Forward Voltage Min Max 200 2.0 -- -- -- -- 4.5 100 -100 10 nA -- International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 VDS (V) Range (m) @VGS=0V@VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 200 200 200 200 200 32.5 200 200 200 185 120 28.4 200 200 150 50 25 Energy (MeV) 309 341 350 250 VDS 200 Br I Au 150 100 50 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHMJ57260SE 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 1 0.1 5.0V 0.01 0.1 20s PULSE WIDTH TJ = 25 C 1 10 10 5.0V 1 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 TJ = 150 C 10 TJ = 25 C 1 V DS = 15 50V 20s PULSE WIDTH 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 100 Fig 2. Typical Output Characteristics 1000 6.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 5.0 20s PULSE WIDTH TJ = 150 C 0.1 0.1 100 VDS , Drain-to-Source Voltage (V) 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP TOP ID = 35A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation 10000 20 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 8000 C, Capacitance (pF) IRHMJ57260SE Ciss Coss 6000 4000 Crss 2000 0 1 10 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 40 80 120 160 200 240 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) VDS = 160V VDS = 100V VDS = 40V 16 0 100 ID = 35A OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100 TJ = 150 C 10 TJ = 25 C 1 V GS = 0 V 0.1 0.2 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 2.2 100s 10 1ms 1 0.1 10ms Tc = 25C Tj = 150C Single Pulse 1.0 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHMJ57260SE Pre-Irradiation 50 LIMITED BY PACKAGE VGS 40 ID , Drain Current (A) RD VDS D.U.T. RG 30 + -V DD VGS Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 0.001 0.00001 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHMJ57260SE 15V D.U.T. RG VGS 20V DRIVER L VDS + V - DD IAS A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 800 ID 15.7A 22A BOTTOM 35A TOP 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12 V QGS .3F D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 12V .2F IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHMJ57260SE Pre-Irradiation Footnotes: A Repetitive Rating; Pulse width limited by maximum junction temperature. A VDD = 50V, starting TJ = 25C, L=0.5mH Peak IL = 35A, VGS =12V A ISD 35A, di/dt 575A/s, VDD 200V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 160 volt V DS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- TO-254AA Tabless NOT ES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONT ROLLING DIMENS ION: INCH. T HIS OUT LINE IS A MODIFIED T O-254AA JEDEC OUT LINE. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/2004 8 www.irf.com