Absolute Maximum Ratings
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 35*
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 28
IDM Pulsed Drain Current À140
PD @ TC = 25°C Max. Power Dissipation 208 W
Linear Derating Factor 1.67 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á320 mJ
IAR Avalanche Current À35 A
EAR Repetitive Avalanche Energy À20.8 mJ
dv/dt Peak Diode Recovery dv/dt Â10 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Pckg. Mounting Surface Temp. 300 (for 5s)
Weight 8.0 (Typical) g
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
oC
A
RADIATION HARDENED
IRHMJ57260SE
POWER MOSFET
SURFACE MOUNT (TO-254AA Tabless)
12/24/04
www.irf.com 1
200V, N-CHANNEL
* Current is limited by package
TECHNOLOGY
Features:
nSingle Event Effect (SEE) Hardened
nIdentical Pre- and Post-Electrical Test Conditions
nRepetitive Avalanche Ratings
nDynamic dv/dt Ratings
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nElectically Isolated
nCeramic Eyelets
n Light Weight
For footnotes refer to the last page
55
Pre-Irradiation
Product Summary
Part Number Radiation Level RDS(on) ID
IRHMJ57260SE 100K Rads (Si) 0.049Ω 35A*
TO-254AA Tabless
PD-96913
IRHMJ57260SE Pre-Irradiation
2www.irf.com
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 0.60
RthCS Case-to-Sink — 0.21 — °C/W
RthJA Junction-to-Ambient — — 48 Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 35*
ISM Pulse Source Current (Body Diode) À— — 140
VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 35A, VGS = 0V Ã
trr Reverse Recovery Time — — 450 ns Tj = 25°C, IF = 35A, di/dt ≥ 100A/µs
QRR Reverse Recovery Charge — — 6.5 µCV
DD ≤ 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by package
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.27 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.049 ΩVGS = 12V, ID = 28A
Resistance
VGS(th) Gate Threshold Voltage 2.5 — 4.5 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 35 — — S ( )V
DS = 15V, IDS = 28A Ã
IDSS Zero Gate Voltage Drain Current — — 10 VDS= 160V ,VGS=0V
——25 V
DS = 160V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 165 VGS =12V, ID = 35A
Qgs Gate-to-Source Charge — — 45 nC VDS = 100V
Qgd Gate-to-Drain (‘Miller’) Charge — — 75
td(on) Turn-On Delay Time — — 35 VDD = 100V, ID = 35A
trRise Time — — 125 VGS =12V, RG = 2.35Ω
td(off) Turn-Off Delay Time — — 80
tfFall Time — — 50
LS + LDTotal Inductance — 6.8 — Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss Input Capacitance — 5200 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 885 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 50 —
nA
Ω
Ã
nH
ns
µA
www.irf.com 3
Pre-Irradiation IRHMJ57260SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion LET Energy Range VDS (V)
MeV/(mg/cm2)) (MeV) (µm) @VGS=0V@VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br 36.7 309 39.5 200 200 200 200 200
I 59.8 341 32.5 200 200 200 185 120
Au 82.3 350 28.4 200 200 150 50 25
0
50
100
150
200
250
0 -5 -10 -15 -20
VGS
VDS
Br
I
Au
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter 100K Rads (Si) Units Test Conditions
Min Max
BVDSS Drain-to-Source Breakdown Voltage 200 — VVGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage 2.0 4.5 VGS = VDS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse — -100 VGS = -20V
IDSS Zero Gate Voltage Drain Current — 10 µA VDS=160V, VGS=0V
RDS(on) Static Drain-to-Source
On-State Resistance (TO-3) — 0.044 Ω VGS = 12V, ID = 28A
RDS(on) Static Drain-to-Source
VSD Diode Forward Voltage — 1.2 V VGS = 0V, ID = 35A
On-State Resistance (TO-254) — 0.049 Ω VGS = 12V, ID = 28A
IRHMJ57260SE Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
0.01
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
1000
5.0 6.0 7.0 8.0 9.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
12V
35A
www.irf.com 5
Pre-Irradiation IRHMJ57260SE
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
040 80 120 160 200 240
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
35A
V = 40V
DS
V = 100V
DS
V = 160V
DS
0.1
1
10
100
1000
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1.0 10 100 1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
IRHMJ57260SE Pre-Irradiation
6www.irf.com
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
VGS
25 50 75 100 125 150
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
www.irf.com 7
Pre-Irradiation IRHMJ57260SE
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Fig 12a. Unclamped Inductive Test Circuit
25 50 75 100 125 150
0
200
400
600
800
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
15.7A
22A
35A
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
VGS
IRHMJ57260SE Pre-Irradiation
8www.irf.com
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L=0.5mH
Peak IL = 35A, VGS =12V
 ISD ≤ 35A, di/dt ≤ 575A/µs,
VDD ≤ 200V, TJ ≤ 150°C
Footnotes:
Case Outline and Dimensions — TO-254AA Tabless
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/2004
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. T HIS OUT LINE IS A MODIFIED TO-254AA JEDEC OUT LINE.
3. CONT ROL LING DIME NS ION: INCH.
NOT ES : PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
