© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 7 1Publication Order Number:
M1MA151KT1/D
M1MA151KT1,
M1MA152KT1
Preferred Device
Single Silicon Switching
Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the
SC−59 package which is designed for low power surface mount
applications.
Features
•Fast trr, < 3.0 ns
•Low CD, < 2.0 pF
•Available in 8 mm Tape and Reel
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.
•Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Reverse Voltage M1MA151KT1 VR40 Vdc
M1MA152KT1 80
Peak Reverse Voltage M1MA151KT1 VRM 40 Vdc
M1MA152KT1 80
Forward Current IF100 mAdc
Peak Forward Current IFM 225 mAdc
Peak Forward Surge Current IFSM
(Note 1) 500 mAdc
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation PD200 mW
Junction Temperature TJ150 °C
Storage Temperature Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. t = 1 SEC
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
SC−59
SUFFIX
CASE 318D
SC−59 PACKAGE SINGLE
SILICON SWITCHING DIODES
40/80 V−100 mA
SURFACE MOUNT
MARKING DIAGRAM
21
3
3 CATHODE
2
ANODE
1
NO CONNECTION
Mx M G
1
Mx = Device Code
x = H for 151
I for 152
M= Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
M1MA151KT1, M1MA152KT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current M1MA151KT1 IRVR = 35 V − 0.1 mAdc
M1MA152KT1 VR = 75 V − 0.1
Forward Voltage VFIF = 100 mA − 1.2 Vdc
Reverse Breakdown Voltage M1MA151KT1 VRIR = 100 mA 40 − Vdc
M1MA152KT1 80 −
Diode Capacitance CDVR = 0, f = 1.0 MHz − 2.0 pF
Reverse Recovery Time (Figure 1) trr (Note 2) IF = 10 mA, VR = 6.0 V,
RL = 100 W, Irr = 0.1 IR
− 3.0 ns
2. trr Test Circuit
A
RL
trtp
t
10%
90%
VRtp = 2 ms
tr = 0.35 ns
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 W
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
Figure 1. Reverse Recovery Time Equivalent Test Circuit
ORDERING INFORMATION
Device Package Shipping†
M1MA151KT1 SC−59 3000 Units / Tape & Reel
M1MA151KT1G SC−59
(Pb−Free) 3000 Units / Tape & Reel
M1MA152KT1 SC−59 3000 Units / Tape & Reel
M1MA152KT1G SC−59
(Pb−Free) 3000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
M1MA151KT1, M1MA152KT1
http://onsemi.com
3
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE F
STYLE 2:
PIN 1. N.C.
2. ANODE
3. CATHODE
2.4
0.094
0.95
0.037
0.95
0.037
1.0
0.039
0.8
0.031 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
e
A1
b
A
E
D
1
3
2
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
HEDIM
AMIN NOM MAX MIN
MILLIMETERS
1.00 1.15 1.30 0.039
INCHES
A1 0.01 0.06 0.10 0.001
b0.35 0.43 0.50 0.014
c0.09 0.14 0.18 0.003
D2.70 2.90 3.10 0.106
E1.30 1.50 1.70 0.051
e1.70 1.90 2.10 0.067
L0.20 0.40 0.60 0.008
2.50 2.80 3.00 0.099
0.045 0.051
0.002 0.004
0.017 0.020
0.005 0.007
0.114 0.122
0.059 0.067
0.075 0.083
0.016 0.024
0.110 0.118
NOM MAX
HE
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M1MA151KT1/D
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