IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4350 gema OS-PCN-2009-021-A2 acc. to OS-PCN-2009-021-A2 Wesentliche Merkmale Features * * * * * * * * * * Infrarot LED mit hoher Ausgangsleistung Abstrahlwinkel 13 Sehr hohe Strahlstarke Kurze Schaltzeiten UL Version erhaltlich High Power Infrared LED Emission angle 13 Very high radiant intensity Short switching times UL version available Anwendungen Applications * * * * * * * * Infrarotbeleuchtung fur Kameras Sensorik Datenubertragung Rauchmelder Infrared Illumination for cameras Sensor technology Data transmission Smoke detectors Sicherheitshinweise Safety Advices Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefahrlich fur das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, mussen gema den Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Typ Type Bestellnummer Ordering Code Strahlstarkegruppierung1) (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping1) Ie (mW/sr) SFH 4350 Q65110A2091 63 (typ. 200) 1) gemessen bei einem Raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr 2012-05-21 1 SFH 4350 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top , Tstg - 40 ... + 100 C Sperrspannung Reverse voltage VR 5 V Vorwartsgleichstrom Forward current IF 100 mA Stostrom, tp = 100 s, D = 0 Surge current IFSM 1 A Verlustleistung Power dissipation Ptot 180 mW 450 K/W Warmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgroe je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA peak 860 nm Schwerpunkt-Wellenlange der Strahlung Centroid wavelength IF = 100 mA centroid 850 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA 30 nm Abstrahlwinkel Half angle 13 Grad deg. Aktive Chipflache Active chip area A 0.09 mm2 Abmessungen der aktiven Chipflache Dimension of the active chip area LxB LxW 0.3 x 0.3 mm 2012-05-21 2 SFH 4350 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 tr , tf 12 ns VF VF 1.5 (< 1.8) 2.4 (< 3.0) V V Sperrstrom Reverse current IR not designed for A reverse operation Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms e typ 70 mW Temperaturkoeffizient von Ie bzw. e, TCI IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA - 0.5 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV - 0.7 mV/K Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TC + 0.3 nm/K Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s 2012-05-21 3 SFH 4350 Strahlstarke Ie in Achsrichtung1) gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Symbol Werte Values Einheit Unit SFH 4350 -V SFH 4350 -AW SFH 4350 -BW SFH 4350 -CW Strahlstarke Ie min Radiant intensity Ie max IF = 100 mA, tp = 20 ms 63 125 100 200 160 320 250 500 mW/sr mW/sr Strahlstarke Radiant intensity IF = 1 A, tp = 25 s 750 1200 1900 3000 mW/sr 1) Ie typ Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one bin in one packing unit (variation lower 2:1) Abstrahlcharakteristik Radiation Characteristics Irel = f () 40 30 20 10 0 OHF02499 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2012-05-21 0.8 0.6 0.4 0 20 40 60 80 4 100 120 SFH 4350 Relative Spectral Emission Irel = f () Single pulse, tp = 25 s OHF04132 100 Ie = f (IF) Ie 100 mA Radiant Intensity OHL01715 101 80 10 OHR00880 125 F mA Ie I e (100 mA) I rel % Max. Permissible Forward Current IF = f (TA), RthJA = 450 K/W 100 0 5 75 60 10-1 5 40 50 10-2 20 0 700 25 5 750 800 10-3 0 10 nm 950 850 5 10 1 5 10 2 mA 10 3 IF Forward Current IF = f (VF) Single pulse, tp = 100 s OHL01713 0 IF Permissible Pulse Handling Capability IF = f (), TA = 25 C, duty cycle D = parameter 10 A IF 1.2 A OHF05438 t tP D = TP 1.0 IF T D= 10 -1 5 0.8 10 -2 0.6 0.005 0.01 0.02 0.033 0.05 0.1 0.2 0.5 1 5 0.4 10 -3 5 0.2 10 -4 0 0.5 1 1.5 2 2.5 V 3 VF 0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 tp 2012-05-21 5 0 0 20 40 60 80 C 100 T SFH 4350 0.4 (0.016) 2 0.8 (0.031) 1.8 (0.071) Surface not flat 5.2 (0.205) 4.5 (0.177) 4.1 (0.161) 3.9 (0.154) 3.1 (0.122) 2.9 (0.114) 0.6 (0.024) 0.4 (0.016) 0.7 (0.028) 0.4 (0.016) 2.54 (0.100) spacing Mazeichnung Package Outlines 1 Chip position 3.3 (0.130) 6.3 (0.248) 5.9 (0.232) 1.2 (0.047) 0.6 (0.024) 0.4 (0.016) 4.0 (0.157) 3.6 (0.142) GEMY6689 Mae in mm (inch) / Dimensions in mm (inch). Gehause / Package 3 mm, klares Gehause / 1/10", clear package Anschlussbelegung Pin configuration 1 = Anode / anode 2 = Kathode / cathode Empfohlenes Lotpaddesign Wellenloten TTW Recommended Solder Pad Design TTW Soldering 4.8 (0.189) Anode 4 (0.157) OHLPY985 Mae in mm (inch) / Dimensions in mm (inch). 2012-05-21 6 SFH 4350 Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering (nach IEC 61760-1) (acc. to IEC 61760-1) OHA04645 300 10 s max., max. contact time 5 s per wave C T 250 235 C - 260 C First wave Second wave Continuous line: typical process Dotted line: process limits T < 150 K 200 Cooling Preheating ca. 3.5 K/s typical 150 ca. 2 K/s 130 C 120 C 100 C 100 ca. 5 K/s Typical 50 0 0 20 40 60 80 100 120 140 160 180 200 220 s 240 t Published by OSRAM Opto Semiconductors GmbH Leibnizstrae 4, D-93055 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2012-05-21 7