Radar Pulsed Power Transistor
115W, 2.7-2.9 GHz, 200µs Pulse, 10% Duty M/A-COM Products
PRELIMINARY, 10 Aug 07
MAPR-002731-115M00
1
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
• Device marked as PR2731-115M
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter Test Conditions Frequency Symbol Min Max Units
Collector-Emitter Breakdown Voltage IC = 40mA BVCES 65 - V
Collector-Emitter Leakage Current VCE = 36V ICES - 7.5 mA
Thermal Resistance Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz RTH(JC) - TBD °C/W
Output Power Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz POUT 115 - W
Power Gain Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz GP 7.6 - dB
Gain Flatness Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz ΔG - 1.0 dB
Collector Efficiency Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz ηC 38 - %
Pulse Droop Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz Droop - 0.5 dB
Input Return Loss Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz RL - -10 dB
Load Mismatch Tolerance Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz VSWR-T - 2:1 -
Load Mismatch Stability Vcc = 36V, Pin = 20W F = 2.7, 2.9, 3.1 GHz VSWR-S - 1.5:1 -
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 65 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC TBD A
Power Dissipation @ +25°C PTOT TBD W
Storage Temperature TSTG -65 to +200 °C
Junction Temperature TJ 200 °C
Outline Drawing
Radar Pulsed Power Transistor
115W, 2.7-2.9 GHz, 200µs Pulse, 10% Duty M/A-COM Products
PRELIMINARY, 10 Aug 07
MAPR-002731-115M00
2
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Typical RF Performance
Gain vs. Frequency Collector Efficiency vs. Frequency
Freq.
(GHz)
Pin
(W)
Pout
(W)
Gain
(dB)
ΔGain
(dB)
Eff
(%)
RL
(dB)
VSWR-S
(1.5:1)
VSWR-T
(2:1)
2.7 20 140 8.45 - 40.1 -11.8 S P
2.9 20 133 8.23 - 38.9 -16.6 S P
3.1 20 128 8.06 0.39 39.8 -15.3 S P
Ic
(A)
9.16
8.97
8.49
Droop
(dB)
0.00
0.12
0.26
7.5
8.0
8.5
9.0
9.5
2.7 2.8 2.9 3.0 3.1
Fr e q (GHz )
Gain (dB)
30
35
40
45
50
2.7 2.8 2.9 3.0 3.1
Fr e q (GHz )
Efficiency (%)
Radar Pulsed Power Transistor
115W, 2.7-2.9 GHz, 200µs Pulse, 10% Duty M/A-COM Products
PRELIMINARY, 10 Aug 07
MAPR-002731-115M00
3
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
RF Power Transfer Curve
(Output Power Vs. Input Power)
F (GHz) ZIF (Ω) ZOF (Ω)
2.7 4.7 - j6.1 2.4 - j2.4
2.8 4.5 - j5.8 2.4 - j2.2
2.9 4.4 - j5.7 2.4 - j2.0
3.0 4.3 - j5.5 2.4 - j1.8
3.1 4.1 - j5.3 2.4 - j1.6
RF Test Fixture Impedance
20
60
100
140
180
12 16 20 24 28
Pin (wa tts)
Pout (watts)
2.7 GHz 2.9 GHz 3.1 GHz
Radar Pulsed Power Transistor
115W, 2.7-2.9 GHz, 200µs Pulse, 10% Duty M/A-COM Products
PRELIMINARY, 10 Aug 07
MAPR-002731-115M00
4
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Test Fixture Circuit Dimensions
Test Fixture Assembly
