71812 TKIM/52703 TSIM TA-100152 No.7519-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
August, 2013
50C02SS
Bipolar Transistor
50V, 0.4A, Low VCE(sat) NPN Single SSFP
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Applications
• Low-frequency Amplifer, high-speed switching small motor drive, muting circuit
Features
• Large current capacity
• Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=175mΩ[IC=0.5A, IB=50mA]
• Ultrasmall package facilitates miniaturization in end products
• Small ON-resistance (Ron)
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 60 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 5V
Collector Current IC400 mA
Collector Current (Pulse) ICP 800 mA
Collector Dissipation PC
Mounted on a glass-epoxy board (20×30×1.6mm)
200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7029A-002
Ordering number : EN7519A
Product & Package Information
• Package : SSFP
• JEITA, JEDEC : SC-81
•
Minimum Packing Quantity
: 8,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
TL
YN
LOT No.
LOT No.
3
2
1
1 : Base
2 : Emitter
3 : Collector
SSFP
1
3
12
2
3
1.4
1.4
0.3 0.3
0.8
0.6
0.070.07
0 to 0.02
0.25
0.2
0.45
0.1
50C02SS-TL-E
50C02SS
No.7519-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=40V, IE=0A 100 nA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 100 nA
DC Current Gain hFE VCE=2V, IC=10mA 300 800
Gain-Bandwidth Product fTVCE=10V, IC=50mA 500 MHz
Output Capacitance Cob VCB=10V, f=1MHz 2.8 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA 50 100 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA 0.9 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 5 V
Turn-ON Time ton See specifi ed Test Circuit. 30 ns
Storage Time tstg 340 ns
Fall Time tf55 ns
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
50C02SS-TL-E SSFP 8,000pcs./reel Pb Free
VRRB
VCC=25VVBE= --5V
++
50Ω
INPUT
OUTPU
T
RL
220μF 470μF
PW=20μsIB1
D.C.≤1% IB2
IC=20IB1= --20IB2=200mA
50C02SS
No.7519-3/7
hFE -- IC
IT05108
IC -- VCE
IT05106
IC -- VBE
IT05107
Collector-to-Emitter Voltage, VCE -- mV
Collector Current, IC -- mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
Collector Current, IC -- mA
DC Current Gain, hFE
1.0 10 100 1000
3257 3257 3257
1000
100
10
2
3
5
7
2
3
5
7
0
0
350
400
300
200
250
500
450
200
150
100
50
0
200
300
600
500
400
100
500 1000
800 900100 300 400 600 700 0 0.2 0.4 0.6 0.8 1.21.0
Ta=75°C
--25°C
25°C
VCE=2V
VCE=2V
IB=0
200μA
600μA
1mA
2mA
3mA
5mA
7mA
8mA
30mA
20mA 15mA
10mA
Ta=75°C
25°C
--25
°
C
IT05411
1.0 23 5 10 100
72357 1000
23 57
2
5
7
5
7
3
2
100
3
10
--25°C
25°C
Ta=75°C
IC / IB=10
VCE(sat) -- IC
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Cob -- VCB
IT05112
VCE(sat) -- IC
IT05110
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- mA
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
IT05111
VBE(sat) -- IC
Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2735 2 735
10 100
1.0
10
1.0
7
5
3
2
1.0 23 5357
10
272357
100 1000
10
1.0
0.1
7
5
3
2
7
5
3
2
75
°
C
Ta= --25
°
C
25
°
C
IC / IB=20
f=1MHz
IT05110
1000
2
3
100
7
5
2
3
7
5
101.0 23 510 100
723 5723 571000
IC / IB=50
--25°C
25°C
Ta=75°C
VCE(sat) -- IC
IT05109
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
1.0 23 5 10 100
72357 1000
23 57
2
5
7
3
2
100
3
10
--25°C
25°C
Ta=75°C
IC / IB=20
50C02SS
No.7519-4/7
fT -- IC
IT05113
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
0
020 40 60 80 100 120
200
150
100
50
250
140 160
PC -- Ta
IT05114
Collector Dissipation, PC -- mW
Ambient Temperature, Ta -- °C
1.0 53
100
1000
7
5
3
2
1000100
27 5327 5327
10
VCE=10V
Base Current, IB -- mA
Ron -- IB
ON Resistance, Ron -- Ω
f=1MHz
0.1
0.1
IT06092
7
5
3
2
10
7
5
3
2
7
5
3
2
1.0
100
32 57 32 57
1.0 10
OUT
IN 1kΩ
1kΩ
IB
Mounted on a glass-epoxy board(20✕30✕1.6mm)
50C02SS
No.7519-5/7
Embossed Taping Specifi cation
50C02SS-TL-E
50C02SS
No.7519-6/7
Outline Drawing Land Pattern Example
50C02SS-TL-E
Mass (g) Unit
0.0018
* For reference
mm Unit: mm
0.5
0.5
0.45 0.45
0.45 0.45
1.2
50C02SS
PS No.7519-7/7
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