BTA08-800CW3G - LITTELFUSE

Speciﬁcations are subject to change without notice.

Revised: 06/17/19

Thyristors

Surface Mount – 800V > BTA08-800CW3G

• Blocking Voltage to 800 V

• On-State Current Rating

of 8 A RMS at 25°C

• Uniform Gate Trigger

Currents in Three

Quadrants

• High Immunity to dV/dt

− 1500 V/µs minimum at

125°C

• Minimizes Snubber

Networks for Protection

• Industry Standard TO-

220AB Package

• High Commutating dI/

dt − 1.5 A/ms minimum at

125°C

• Internally Isolated (2500

VRMS)

• These are Pb−Free

Devices

Features

Designed primarily for half-wave ac control applications,

such as motor controls, heating controls and power supply

crowbar circuits.

Description

BTA08-800CW3G

Additional Information

Samples

Resources

Datasheet

Functional Diagram

MT 1

MT 2

Pin Out

CASE 221A

STYLE 4

Speciﬁcations are subject to change without notice.

Revised: 06/17/19

Thyristors

Surface Mount – 800V > BTA08-800CW3G

Rating Symbol Value Unit

Peak Repetitive Off-State Voltage (Note 1)

(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C) BTA08−800CW3G VDRM,

VRRM

800 V

On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT (RMS) 8.0 A

Peak Non-Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz, TC = 25°C) ITSM 90 A

Circuit Fusing Consideration (t = 8.3 ms) I2t 36 A²sec

Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms) VDSM/ VRSM

VDSM/ VRSM

+100 V

Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A

Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PG(AV) 20 W

Average Gate Power (TJ = 125°C) PG(AV) 1.0 W

Operating Junction Temperature Range TJ-40 to +125 °C

Storage Temperature Range Tstg -40 to +125 °C

RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) Viso 2500 V

Maximum Ratings (TJ = 25°C unless otherwise noted)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.

Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative

potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Thermal Characteristics

Rating Symbol Value Unit

Thermal Resistance, Junction−to−Case (AC)

Junction−to−Ambient RƟJC

RƟJA

2.5

60 °C/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for

10 seconds TL260 °C

Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)

Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic Symbol Min Ty p Max Unit

Peak Repetitive Blocking Current

(VD = VDRM = VRRM; Gate Open) TJ = 25°C

TJ = 125°C IDRM,

IRRM

- - 0.005 mA

- - 2.0

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

Characteristic Symbol Min Ty p Max Unit

Forward On-State Voltage (Note 2) (ITM = ±22.5 A Peak) VTM − − 1.55 V

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω)

MT2(+), G(+)

IGT

2.5 − 35

mAMT2(+), G(−) 2.5 − 35

MT2(−), G(−) 2.5 − 35

Holding Current

(VD = 12 V, Gate Open, Initiating Current = ±150 mA) IH− − 35 mA

Latching Current (VD = 12 V, IG = 50 mA)

MT2(+), G(+)

− − 50

mAMT2(+), G(−) − − 60

MT2(−), G(−) − − 50

Gate Trigger Voltage (VD = 12 V, RL = 30 Ω)

MT2(+), G(+)

VGT

0.5 − 1.7

VMT2(+), G(−) 0.5 − 1.1

MT2(−), G(−) 0.5 − 1.1

Gate Non−Trigger Voltage (TJ = 125°C)

MT2(+), G(+)

tgt

0.2 − −

MT2(+), G(−) 0.2 − −

MT2(−), G(−) 0.2 − −

Speciﬁcations are subject to change without notice.

Revised: 06/17/19

Thyristors

Surface Mount – 800V > BTA08-800CW3G

Voltage Current Characteristic of SCR

Quadrant Deﬁnitions for a Triac

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

VTM Maximum On State Voltage

IHHolding Current

Dynamic Characteristics

Characteristic Symbol Min Ty p Max Unit

Rate of Change of Commutating Current, See Figure 10.

(Gate Open, TJ = 125°C, No Snubber) (dI/dt)c 1.5 − − A/ms

Critical Rate of Rise of On−State Current

(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤100 ns) dI/dt − − 50 A/µs

Critical Rate of Rise of Off-State Voltage

(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dV/dt 1500 − − V/µs

+C urrent

+V oltage

VTM

IDR M at VDR M

on stat e

off stat e

IRR M at VRR M

Quadrant 1

Main Terminal 2 +

Quadrant 3

Main Terminal 2 VTM

All polarities are referenced to MT1.

With in phase signals (using standard AC lines) quadrants I and III are used

MT 1

(+) IGT

GA TE

(+) MT 2

RE F

MT 1

() IGT

GA TE

(+) MT 2

RE F

MT 1

(+) IGT

GA TE

() MT 2

RE F

MT 1

() IGT

GA TE

() MT 2

RE F

MT2 NEGA TIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

VItnardauQIIItnardauQ

ItnardauQIItnardauQ

IGT +I GT

Speciﬁcations are subject to change without notice.

Revised: 06/17/19

Thyristors

Surface Mount – 800V > BTA08-800CW3G

Figure 4. Thermal Response

Figure 5. Hold Current Variation

Figure 3. On−State Characteristics

t, TIME (ms)

r(t), TRANSIEN T THERMAL RESIST ANCE (NORMALIZED)

0.1

0.01 1· 104

10001001010.1

T , JUNCTION TEMPERATURE (°C)

40 25 10 52 03 55 06 58 09 51 10 125

IH, HOLDING CURRENT (mA)

MT2 POSITIVE

MT2 NEGATIVE

, INSTANTANEOUS ON-STATE VOLTAGE (V)

0.1

100

00 .5 11 .5 22 .5 33 .5 44 .5 5

, INSTANTANEOUS ON STATE CURRENT (A)

IT(RMS ), RMS ON-S TATE CURRENT (A )

125

120

115

110

105

100

TC, CASE TEMPER AT URE ( °C)

= 120, 90, 60, 30 °

= 180°

Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation

IT(RMS) , ON-S TATE CURRENT (A )

= 30°

180°

120°

90°

PAV, AVERAGE POWER (W )

60°

Speciﬁcations are subject to change without notice.

Revised: 06/17/19

Thyristors

Surface Mount – 800V > BTA08-800CW3G

TJ, JUNCTION TEMPERATURE (°C)

100

40 25 10 52 03 55 06 58 09 51 10 125

VD = 12 V

RL = 30

IGT

, GATE TRIGGER CURRENT (mA)

Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation

Figure 10. Latching Current Variation

TJ, JUNCTION TEMPERATURE (°C)

0.40

0.60

0.80

1.00

1.20

1.40

1.60

1.80

2.00

40 25 10 52 03 55 06 58 09 51 10 125

VD = 12 V

RL = 30

GATE TRIGGER VOLTAGE (V)

100

120

40 25 10 52 03 55 06 58 09 51 10 125

TJ, TEMPERATURE (°C)

LATCHING CURRENT (mA)

VD = 800 Vpk

TJ = 125°C

Figure 8. Critical Rate of Rise of Off-State Voltage

(Exponential Waveform)

RG, GATE TO MAIN TERMINAL 1 RESIST ANCE (OHMS)

5000

010000100010010

VD = 800 Vpk

TJ = 125°C

Figure 9. Simpliﬁed Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)

LL1N4007

200 V

MEASURE

CHARGE

CONTROL

CHARGE TRIGGER

MT2

MT1

1N914

TRIGGER CONTROL

200 VRMS

ADJUST FOR

ITM, 60 Hz VAC

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Note: Component values are for veriﬁcation of rated (di/dt)c. See AN1048 for additional information

Speciﬁcations are subject to change without notice.

Revised: 06/17/19

Thyristors

Surface Mount – 800V > BTA08-800CW3G

Dimensions Part Marking System

12 3

SEATING

PLANE

Pin Assignment

1Main Terminal 1

2Main Terminal 2

3 Gate

4 No Connection

Ordering Information

Device Package Shipping

BTA08−800CW3G TO−220AB

(Pb−Free) 500 Units / Rail

TO 220AB

CASE 221A

STYLE 12

123

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

Dim Inches Millimeters

Min Max Min Max

A0.590 0.620 14.99 15.75

B0.380 0.420 9.65 10.67

C0.178 0.188 4.52 4.78

D0.025 0.035 0.64 0.89

F0.142 0.147 3.61 3.73

G0.095 0.105 2.41 2.67

H0.110 0.130 2.79 3.30

J0.018 0.024 0.46 0.61

K0.540 0.575 13.72 14.61

L0.060 0.075 1.52 1.91

N0.195 0.205 4.95 5.21

Q0.105 0.115 2.67 2.92

R0.085 0.095 2.16 2.41

S0.045 0.060 1. 14 1.52

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and

test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.

Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.

BTA08-xCWG

YMAXX

x =6 or 8

Y =Year

M =Month

A =Assembly Site

XX =Lot Serial Code

G =Pb-Free Package