Bridge Diode Dual In-Line Package OUTLINE S1NB Unit : mm Weight : 0.29g typ. Package1NSMD 6.8 800V 1A Type No. * DIP Class Feature S1NB 6094 10 Date code * Small-DIP - 2.6 Package1 NTHD Unit : mm Weight : 0.29gtyp. 6.8 Type No. Class S1NB 6099 - 6.5 Date code 2.5 4.4 Web 'PSEFUBJMTPGPVUMJOFEJNFOTJPOT SFGFSUPPVSXFCTJUFPSUIF4FNJDPOEVDUPS 4IPSU'PSN$BUBMPH"TGPSUIFNBSLJOH SFGFSUPUIFTQFDJaDBUJPOi.BSLJOH 5FSNJOBM$POOFDUJPOu RATINGS Absolute Maximum Ratings Tl = 25unless otherwise speci Symbol Conditions Item Storage Temperature Operation Junction Temperature Maximum Reverse Voltage Peak Surge Forward Current Current Squared Time Forward Voltage Reverse Current Thermal Resistance 20 J534 Unit Tstg -40150 Tj 150 VRM Average Rectified Forward Current Type No. S1NB20 S1NB60 S1NB80 IO IFSM 2 It 200 50Hz Ta = 25 50Hz sine wave, Resistance load, On glass-epoxy substrate, Ta=25 50Hz Tj = 25 50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25 1mst10msTj = 25 per diode 600 800 1 A 30 A 4.5 A2s Electrical Characteristics Tl = 25unless otherwise speci VF IR jl ja IF = 0.5A, Pulse measurement, per diode VR = VRM, Pulse measurement, per diode Junction to Lead Junction to Ambient V MAX 1.05 MAX 10 MAX 15 MAX 68 V A /W Small DIP Bridge S1NB CHARACTERISTIC DIAGRAMS Sine wave 50Hz )[TJOFXBWFJTVTFEGPSNFBTVSFNFOUT Typical 4FNJDPOEVDUPSQSPEVDUTHFOFSBMMZIBWFDIBSBDUFSSJTUJDWBSJBUJPO 5ZQJDBMJTBTUBUJTUJDBMBWFSBHFPGUIFEFWJDFhTBCJMJUZ J534 21