SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Available in uni-directional and bi-directional Available * Excellent clamping capability * Very fast response time * Low incremental surge resistance SMC (DO-214AB) * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 LINKS TO ADDITIONAL RESOURCES 3D 3D Design Tools Related Documents A 3D Models Models Application Notes * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS T Technical Notes Marking Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. PRIMARY CHARACTERISTICS VBR uni-directional 6.40 V to 231 V VBR bi-directional 6.40 V to 231 V VWM 5.0 V to 188 V PPPM 1500 W PD 6.5 W IFSM (uni-directional only) 200 A TJ max. 150 C Polarity Uni-directional, bi-directional Package SMC (DO-214AB) DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. SMCJ188CA). Electrical characteristics apply in both directions. MECHANICAL DATA Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified ("_X" denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 s SYMBOL waveform (1)(2) Peak pulse current with a 10/1000 s waveform (1) Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) VALUE UNIT PPPM 1500 W IPPM See next table A IFSM 200 A Power dissipation on infinite heatsink, TA = 50 C PD 6.5 W Operating junction and storage temperature range TJ, TSTG -55 to +150 C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal Revision: 20-Jul-2020 Document Number: 88394 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE MARKING DEVICE TYPE CODE MODIFIED "J" BEND LEAD UNI BI (+)SMCJ5.0A (5) GDE GDE (+)SMCJ6.0A GDG GDG (+)SMCJ6.5A GDK BDK (+)SMCJ7.0A GDM GDM (+)SMCJ7.5A GDP BDP (+)SMCJ8.0A GDR BDR (+)SMCJ8.5A GDT BDT (+)SMCJ9.0A GDV BDV (+)SMCJ10A GDX BDX (+)SMCJ11A GDZ GDZ (+)SMCJ12A GEE BEE (+)SMCJ13A GEG GEG (+)SMCJ14A GEK BEK (+)SMCJ15A GEM BEM (+)SMCJ16A GEP GEP (+)SMCJ17A GER GER (+)SMCJ18A GET BET (+)SMCJ20A GEV BEV (+)SMCJ22A GEX BEX (+)SMCJ24A GEZ BEZ (+)SMCJ26A GFE BFE (+)SMCJ28A GFG BFG (+)SMCJ30A GFK BFK (+)SMCJ33A GFM BFM (+)SMCJ36A GFP BFP (+)SMCJ40A GFR BFR (+)SMCJ43A GFT BFT (+)SMCJ45A GFV GFV (+)SMCJ48A GFX GFX (+)SMCJ51A GFZ GFZ (+)SMCJ54A GGE GGE (+)SMCJ58A GGG GGG (+)SMCJ60A GGK GGK (+)SMCJ64A GGM GGM (+)SMCJ70A GGP GGP (+)SMCJ75A GGR GGR (+)SMCJ78A GGT GGT (+)SMCJ85A GGV GGV (+)SMCJ90A GGX GGX (+)SMCJ100A GGZ GGZ (+)SMCJ110A GHE GHE (+)SMCJ120A GHG GHG (+)SMCJ130A GHK GHK (+)SMCJ150A GHM GHM (+)SMCJ160A GHP GHP (+)SMCJ170A GHR GHR SMCJ188A GHS GHS BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. MAX. 6.40 7.07 6.67 7.37 7.22 7.98 7.78 8.60 8.33 9.21 8.89 9.83 9.44 10.4 10.0 11.1 11.1 12.3 12.2 13.5 13.3 14.7 14.4 15.9 15.6 17.2 16.7 18.5 17.8 19.7 18.9 20.9 20.0 22.1 22.2 24.5 24.4 26.9 26.7 29.5 28.9 31.9 31.1 34.4 33.3 36.8 36.7 40.6 40.0 44.2 44.4 49.1 47.8 52.8 50.0 55.3 53.3 58.9 56.7 62.7 60.0 66.3 64.4 71.2 66.7 73.7 71.1 78.6 77.8 86.0 83.3 92.1 86.7 95.8 94.4 104 100 111 111 123 122 135 133 147 144 159 167 185 178 197 189 209 209 231 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170 188 MAXIMUM REVERSE LEAKAGE AT VWM ID (A) (3) 1000 1000 500 200 100 50 20 10 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE SURGE CURRENT IPPM (A) (2) 163.0 145.6 133.9 125.0 116.3 110.3 104.2 97.4 88.2 82.4 75.4 69.8 64.7 61.5 57.7 54.3 51.4 46.3 42.3 38.6 35.6 33.0 31.0 28.1 25.8 23.3 21.6 20.6 19.4 18.2 17.2 16.0 15.5 14.6 13.3 12.4 11.9 10.9 10.3 9.3 8.5 7.8 7.2 6.2 5.8 5.5 4.6 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103 113 121 126 137 146 162 177 193 209 243 259 275 328 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types having V WM of 10 V and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bi-directional SMCJ5.0CA, the maximum V BR is 7.25 V (6) V = 3.5 V at I = 100 A (uni-directional only) F F (+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices Revision: 20-Jul-2020 Document Number: 88394 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE Typical thermal resistance, junction to ambient air (1) RJA 75 Typical thermal resistance, junction to lead RJL 15 UNIT C/ W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.211 57T 850 7" diameter plastic tape and reel 0.211 9AT 3500 13" diameter plastic tape and reel 0.211 H 850 7" diameter plastic tape and reel 0.211 I 3500 13" diameter plastic tape and reel SMCJ5.0A-E3/57T SMCJ5.0A-M3/57T SMCJ5.0A-E3/9AT SMCJ5.0A-M3/9AT SMCJ5.0AHE3_A/H (1) SMCJ5.0AHM3_A/H (1) SMCJ5.0AHE3_A/I (1) SMCJ5.0AHM3_A/I (1) Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % PPPM - Peak Pulse Power (kW) 100 10 1 0.31 x 0.31" (8.0 x 8.0 mm) Copper pad areas 0.1 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms 100 75 50 25 0 0 25 50 75 100 125 150 175 200 td - Pulse Width (s) TJ - Initial Temperature (C) Fig. 1 - Peak Pulse Power Rating Curve Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Revision: 20-Jul-2020 Document Number: 88394 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMCJ5.0A thru SMCJ188CA www.vishay.com 100 150 TJ = 25 C Pulse width (td) is defined as the point where the peak current decays to 50 % of IPPM tr = 10 s Peak value IPPM 100 Half value IPPM 50 Transient Thermal Impedance (C/W) IPPM - Peak Pulse Current, % IRSM Vishay General Semiconductor IPP 2 10/1000 s waveform as defined by R.E.A. td 1.0 2.0 3.0 4.0 0.01 0.1 1 10 100 1000 t - Time (ms) tp - Pulse Duration (s) Fig. 3 - Pulse Waveform Fig. 5 - Typical Transient Thermal Impedance 20 000 200 Peak Forward Surge Current (A) Measured at zero bias 10 000 CJ - Junction Capacitance (pF) 1.0 0.1 0.001 0 0 10 1000 VR, measured at Stand-off voltage VWM 100 Uni-directional Bi-directional TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 100 TJ = TJ max. 8.3 ms single half sine-wave 10 10 1 10 100 1 400 100 10 VWM - Reverse Stand-Off Voltage (V) Number of Cycles at 60 Hz Fig. 4 - Typical Junction Capacitance Uni-Directional Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current Uni-Directional Use On PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMC (DO-214AB) Mounting Pad Layout Cathode Band 0.185 (4.69) MAX. 0.126 (3.20) 0.246 (6.22) 0.220 (5.59) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.060 (1.52) MIN. 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.320 REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 20-Jul-2020 Document Number: 88394 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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