REVISIONS DOC. NO. SPC-FO05 * Effective: 7/8/02 * DCP No: 1398 ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, @) WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED mu it i c om WITHOUT ate EXPRESS WRITTEN CONSENT OF SPC DCP #] REV DESCRIPTION DRAWN| DATE |CHECKD| DATE |APPRVD] DATE [ 1262) A RELEASED HO | 8/21/01} JWM | 8/21/02 | DJC | 8/21/02 SPCF005.DWG 1885 | B UPDATED TO ROHS COMPLIANCE EO | 02/03/06] HO | 2/6/06 | HO 2/6/06 Dimensions| A B Cc D E F G H I J K RoHS Min. 8.5 | 7.74 |6.09| 0.40 [2.41 [4.82 [0.71 [0.73 [12.7 | 42 Co liant Max. [9.39] 8.5 |6.6 [0.53 [0.88 [2.66 [5.33 [0.86 [1.02 | [ae omptan 3. COLLECTOR A 7 . . . ae . B A silicon NPN transistor in a TO39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage 2. BASE current, low capacity, and beta useful over an extremely wide current range. 1. EMITTER . soge _ o : tgs Electrical Characteristics: (Ty = +25C Unless otherwise specified) | Parameter | Symbol | Test Conditions [Min lTyp [Max [Unit | OFF Characteristics CollectorEmitter Breakdown Voltage | Vigeycep lb = 0.1mA, b = O 40 |- |- v CollectorBase Breakdown Voltage Vier)ceo lb = 100HA, = O 60 |- | - Vv EmitterBase Breakdown Voltage Vier )EBo lg = 100yA, Ic = 0 5 }- | - Vv 1 EMITTER Emitter Cut-Off Current Ver = Vb = 0 |= [o25 [pa 2. BASE mitter u urren EBO BE lc . M. 3. COLLECTOR ON Characteristics, Note 1 DC Current Gain Vee = 10V, Ic = 150mA 50 | |250 |- h Fe Vor = 2.5V, lo = 150mA 4o |_ | _ 3 2 1 CollectorEmitter Saturation Voltage Vor(sat) lb = 150mA, lp = 15mA fe 1.4 BaseEmitter Saturation Voltage Vue(eat) lb = 150mA, Ip = 15mA |- |1.7 SmallSignal Characteristics Absolute Maximum Ratings: - . f- Ver =10V, Ie =50mA, f =20MHz CollectorBase Voltage, Veso = 60V Current GainBandwidth Product T CE c 100/ = MHz CollectorEmitter Voltage, Vogo = 40V Output Capacitance Cobo Vep = 10V, fk = 0, f = 1MHz - |- 412 pF EmitterBase Voltage, Vegg = 5V . = = = Continuous Collector Current, lb = 0.7A Input Capacitance Cine Vee 200mV, Ic 0, f iMHz) |- |80 pF Total Device Dissipation (Th = +25C), Pp = 800mW . Derate above 25C = 4.6mW/*C Note 1. Pulse Test: Pulse Width <300us, Duty Cycle < 1%. Total Device Dissipation (Te = +25C), Pp = SW Derate above 25C = 28.6mW/*C Operating Junction Temperature Range, T; = 65 to +200C Storage Temperature Range, Ty, = 65 to +200C Thermal Resistance, JunctiontCase, Rio = 35C/W Lead Temperature (Duration Soldering, 45 from case, 60sec Mox.), T, 300C DISCLAIMER: TOLERANCES: DRAWN BY: DATE: DRAWING TITLE: ALL STATEMENTS AND TECHNICAL INFORMATION CONTAINED UNLESS OTHERWISE HISHAM ODISH 8/21/02 Amplifier Transistor, TO39, NPN, Silicon HEREIN ARE BASED UPON INFORMATION AND/OR TESTS WE 7 ; BELIEVE TO BE ACCURATE AND RELIABLE. SINCE SPECIFIED, CHECKED BY: DATE: SIZE] DWG. NO. ELECTRONIC FILE REV CONDITIONS OF USE ARE BEYOND OUR CONTROL, THE USER SHALL DETERMINE THE SUITABILITY OF THE PRODUCT POR REP RENCE JEFF MCVICKER 8/21/02| A 2N3053 55C0698.DWG B FOR THE INTENDED USE AND ASSUME ALL RISK AND APPROVED BY: DATE: LIABILITY WHATSOEVER IN CONNECTION THEREWITH. PURPOSES ONLY. : SCALE: NTS Millimet: DANIEL_CAREY 8/21/02 : U.O.M.: Millimeters SHEET: 1 OF 1