Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Colle ct or-Emitter Breakdown
Voltage IC = 10 µA, IB = 0 60 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 1.0 mA, IE = 0 40 V
V(BR)EBO Emitter-Bas e Breakdown V ol tage IE = 10 µA, IC = 0 6.0 V
ICBO Collect or-Cutoff Current VCB = 30 V, TA = 150°C5.0 µA
ICEX Collect or-Cutoff Current VCE = 30 V, VEB = 3. 0 V 50 nA
IBEX Reverse Base Current VCE = 30 V, VEB = 3. 0 V 50 nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
40
70
100
60
30
300
VCE(sat)Collector-Emitter Sa turatio n Voltage* IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.2
0.3 V
V
VBE(sat)Base-Emitter Saturation Vo ltage* IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.65 0.85
0.95 V
V
SMALL SIGNAL CHARACTERISTICS
fTTransition Frequency IC = 20 mA, VCE = 20 V,
f = 100 MHz 300 MHz
Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF
Ceb Emitter-Base Capa citance VEB = 0.5 V, IC = 0, f = 1.0 MHz 8.0 pF
hie Input Impedance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 10 kΩ
hfe Small-Signal Current Gain VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 100 400
hoe Output Adm i ttance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 40
S
SWITCHING CHARACTERISTICS
tdDelay Time IC = 10 m A, IB1 = 1.0 mA,
VEB = 0.5 V 35 ns
trRise Time 35 ns
tsStorage Time IC = 10 mA, IBon = IBoff = 1.0 mA 200 ns
tfFa ll Time 50 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0 %
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
BSR17A
NPN General Purpose Amplifier
(continued)