IRHMJ57160 Pre-Irradiation
2www.irf.com
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 35*
ISM Pulse Source Current (Body Diode) À— — 140
VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 35A, VGS = 0V Ã
trr Reverse Recovery Time — — 270 ns Tj = 25°C, IF = 35A, di/dt ≤100A/µs
QRR Reverse Recovery Charge — — 1.9 µCV
DD ≤ 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on International Rectifier website.
For footnotes refer to the last page
* Current is limited by package
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 0.50
RthCS Case-to-Sink — 0.21 — °C/W
RthJA Junction-to-Ambient — — 48 Typical socket mount
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.013 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.018 Ω VGS = 12V, ID = 35A
Resistance
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 42 — — S ( ) VDS > 15V, IDS = 35A Ã
IDSS Zero Gate Voltage Drain Current — — 10 VDS= 80V ,VGS=0V
——25 V
DS = 80V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 160 VGS =12V, ID = 35A
Qgs Gate-to-Source Charge — — 45 nC VDS = 50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 65
td(on) Turn-On Delay Time — — 35 VDD = 50V, ID = 35A
trRise Time — — 75 VGS =12V, RG = 2.35Ω
td(off) Turn-Off Delay Time — — 75
tfFall Time — — 35
LS + LDTotal Inductance — 6.8 — nH Measured from Drain Lead (6mm/0.25in
from package) to Source Lead(6mm/0.25in
from package) with Source wires internally
bonded from Source Pad to Drain Pad
Ciss Input Capacitance — 5620 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 1583 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 50 —
nA
Ω
Ã
ns
µA