IRHMJ57160 - International Rectifier

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current 35*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 35*

IDM Pulsed Drain Current À140

PD @ TC = 25°C Max. Power Dissipation 250 W

Linear Derating Factor 2.0 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy Á500 mJ

IAR Avalanche Current À35 A

EAR Repetitive Avalanche Energy À25 mJ

dv/dt Peak Diode Recovery dv/dt Â3.4 V/ns

TJOperating Junction -55 to 150

TSTG Storage Temperature Range

Pckg. Mounting Surface Temp. 300 (for 5s)

Weight 3.7 (Typical) g

International Rectifier’s R5TM technology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm2)). The combination

of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

oC

A

12/24/04

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* Current is limited by package



TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on) ID

IRHMJ57160 100K Rads (Si) 0.018Ω 35A*

IRHMJ53160 300K Rads (Si) 0.018Ω 35A*

IRHMJ54160 600K Rads (Si) 0.018Ω 35A*

IRHMJ58160 1000K Rads (Si) 0.019Ω 35A*

Features:

nSingle Event Effect (SEE) Hardened

nIdentical Pre- and Post-Electrical Test Conditions

nRepetitive Avalanche Ratings

nDynamic dv/dt Ratings

nSimple Drive Requirements

nEase of Paralleling

nHermatically Sealed

nElectically Isolated

nCeramic Eyelets

For footnotes refer to the last page

55



TO-254AA Tabless

Pre-Irradiation

n Light Weight

RADIATION HARDENED

IRHMJ57160

POWER MOSFET 100V, N-CHANNEL

SURFACE MOUNT (TO-254AA Tabless)

PD-96916

IRHMJ57160 Pre-Irradiation

2www.irf.com

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

ISContinuous Source Current (Body Diode) — — 35*

ISM Pulse Source Current (Body Diode) À— — 140

VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 35A, VGS = 0V Ã

trr Reverse Recovery Time — — 270 ns Tj = 25°C, IF = 35A, di/dt ≤100A/µs

QRR Reverse Recovery Charge — — 1.9 µCV

DD ≤ 25V Ã

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Note: Corresponding Spice and Saber models are available on International Rectifier website.

For footnotes refer to the last page

* Current is limited by package

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

RthJC Junction-to-Case — — 0.50

RthCS Case-to-Sink — 0.21 — °C/W

RthJA Junction-to-Ambient — — 48 Typical socket mount

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.013 — V/°C Reference to 25°C, ID = 1.0mA

Voltage

RDS(on) Static Drain-to-Source On-State — — 0.018 Ω VGS = 12V, ID = 35A

Resistance

VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA

gfs Forward Transconductance 42 — — S ( ) VDS > 15V, IDS = 35A Ã

IDSS Zero Gate Voltage Drain Current — — 10 VDS= 80V ,VGS=0V

——25 V

DS = 80V,

VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V

IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V

QgTotal Gate Charge — — 160 VGS =12V, ID = 35A

Qgs Gate-to-Source Charge — — 45 nC VDS = 50V

Qgd Gate-to-Drain (‘Miller’) Charge — — 65

td(on) Turn-On Delay Time — — 35 VDD = 50V, ID = 35A

trRise Time — — 75 VGS =12V, RG = 2.35Ω

td(off) Turn-Off Delay Time — — 75

tfFall Time — — 35

LS + LDTotal Inductance — 6.8 — nH Measured from Drain Lead (6mm/0.25in

from package) to Source Lead(6mm/0.25in

from package) with Source wires internally

bonded from Source Pad to Drain Pad

Ciss Input Capacitance — 5620 — VGS = 0V, VDS = 25V

Coss Output Capacitance — 1583 — pF f = 1.0MHz

Crss Reverse Transfer Capacitance — 50 —

nA

Ω

Ã

ns

µA

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Pre-Irradiation IRHMJ57160

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter Up to 600K Rads(Si)1 1000K Rads (Si)2

Units

Test Conditions

Min Max Min Max

BVDSS Drain-to-Source Breakdown Voltage 100 — 100 — V VGS = 0V, ID = 1.0mA

VGS(th) Gate Threshold Voltage 2.0 4.0 1.5 4.0 VGS = VDS, ID = 1.0mA

IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V

IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V

IDSS Zero Gate Voltage Drain Current — 10 — 25 µA VDS= 80V, VGS =0V

RDS(on) Static Drain-to-Source Ã — 0.013 — 0.014 Ω VGS = 12V, ID =35A

On-State Resistance (TO-3)

RDS(on) Static Drain-to-Source Ã — 0.018 — 0.019 Ω VGS = 12V, ID =35A

On-State Resistance (TO-254)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHMJ57160, IRHMJ53160 and IRHMJ54160

2. Part number IRHMJ58160

Fig a. Single Event Effect, Safe Operating Area

VSD Diode Forward Voltage Ã — 1.2 — 1.2 V VGS = 0V, IS = 35A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion LET Energy Range VDS (V)

MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V

Br 36.7 309 39.5 100 100 100 100 100

I 59.8 341 32.5 100 100 100 35 25

Au 82.3 350 28.4 100 100 80 25 —

0

20

40

60

80

100

120

-20-15-10-50

VDS

VGS

Br

I

Au

IRHMJ57160 Pre-Irradiation

4www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

15

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

5.0V

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

5.0V

10

100

1000

5678910 11

V = 50V

20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-

S

ource

C

urrent

(

A

)

GS

D

T = 25 C

J°

T = 150 C

J°

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

12V

35A

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Pre-Irradiation IRHMJ57160

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

0

2000

4000

6000

8000

10000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

=

0V,

C

f = 1MHz

+ C

C SHORTED

GS

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

030 60 90 120 150 180

0

4

8

12

16

20

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

35A

V = 20V

DS

V = 50V

DS

V = 80V

DS

0.1

1

10

100

1000

0.0 0.5 1.0 1.5 2.0

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

V = 0 V

GS

T = 25 C

J°

T = 150 C

J°

1 10 100 1000

VDS , Drain-toSource Voltage (V)

1

10

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 150°C

Single Pulse

1ms

10ms

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µs

10µs

IRHMJ57160 Pre-Irradiation

6www.irf.com

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

RG

D.U.T.

VGS

+

-

VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150

0

20

40

60

80

100

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJC C

P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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Pre-Irradiation IRHMJ57160

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T. V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

12 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

VDS

+

-V

DD

DRIVER

A

15V

20V

.

25 50 75 100 125 150

0

200

400

600

800

1000

1200

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

ID

TOP

BOTTOM

16A

22A

35A

VGS

IRHMJ57160 Pre-Irradiation

8www.irf.com

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with VGS Bias.

12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

Å Total Dose Irradiation with VDS Bias.

80 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

À Repetitive Rating; Pulse width limited by

maximum junction temperature.

Á VDD = 50V, starting TJ = 25°C, L= 0.82 mH

Peak IL = 35A, VGS = 12V

Â ISD ≤ 35A, di/dt ≤ 330A/µs,

VDD ≤ 100V, TJ ≤ 150°C

Footnotes:

Case Outline and Dimensions — TO-254AA Tabless

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids

that will produce fumes containing beryllium.

1. DIMENS IONING & TOL ERANCING PER AS ME Y14.5M-1994.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. T HIS OUT LINE IS A MODIFIED T O-254AA JEDEC OUT LINE.

3. CONT ROL LING DIME NS ION: INCH.

NOT E S : PIN ASSIGNMENTS

1 = DRAIN

2 = SOURCE

3 = GATE

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 10/2004