IAUT150N10S5N035
OptiMOS™-5 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current I
D
T
C
=25°C, V
GS
=10V 150 A
T
C
=100 °C,
V
GS
=10 V
1)
95
Pulsed drain current
1)
I
D,pulse
T
C
=25 °C 600
Avalanche energy, single pulse
1)
E
AS
I
D
=75 A 210 mJ
Avalanche current, single pulse I
AS
-150 A
Gate source voltage V
GS
-±20V
Power dissipation P
tot
T
C
=25 °C 166 W
Operating and storage temperature T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
VDS 100 V
RDS(on) 3.5 m
ID150 A
Product Summary
Type Package Marking
IAUT150N10S5N035 P/G-HSOF-8-1 5N10035
P/G-HSOF-8-1
8
1
1
8
Tab
Tab
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IAUT150N10S5N035
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
1)
Thermal resistance, junction - case R
thJC
---0.9K/W
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA 100 - - V
Gate threshold voltage V
GS(th)
V
DS
=V
GS
, I
D
=110 µA 2.2 3.0 3.8
Zero gate voltage drain current I
DSS
V
DS
=100 V, V
GS
=0 V,
T
j
=25 °C -0.11µA
V
DS
=50 V, V
GS
=0 V,
T
j
=85 °C
2)
-120
Gate-source leakage current I
GSS
V
GS
=20 V, V
DS
=0 V - - 100 nA
Drain-source on-state resistance R
DS(on)
V
GS
=6 V, I
D
=40 A -3.75.0mΩ
V
GS
=10 V, I
D
=75 A -3.03.5
Values
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IAUT150N10S5N035
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
1)
Input capacitance C
iss
- 4700 6110 pF
Output capacitance C
oss
- 780 1014
Reverse transfer capacitance C
rss
-3452
Turn-on delay time t
d(on)
-12-ns
Rise time t
r
-7-
Turn-off delay time t
d(off)
-23-
Fall time t
f
-26-
Gate Char
g
e Characteristics
1)
Gate to source charge Q
gs
-2330nC
Gate to drain charge Q
gd
-1523
Gate charge total Q
g
-6787
Gate plateau voltage V
plateau
-5.2-V
Reverse Diode
Diode continous forward current
1)
I
S
- - 150 A
Diode pulse current
1)
I
S,pulse
- - 600
Diode forward voltage V
SD
V
GS
=0 V, I
F
=75 A,
T
j
=25 °C -0.91.3V
Reverse recovery time
1)
t
rr
-63-ns
Reverse recovery charge
1)
Q
rr
- 120 - nC
Values
V
GS
=0 V, V
DS
=50 V,
f=1 MHz
V
DD
=50 V, V
GS
=10 V,
I
D
=50 A, R
G,ext
=3.5
V
DD
=50 V, I
D
=100 A,
V
GS
=0 to 10 V
1)
Defined by design. Not subject to production test.
V
R
=50 V, I
F
=50A,
di
F
/dt=100 A/µs
T
C
=25 °C
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IAUT150N10S5N035
1 Power dissipation 2 Drain current
P
tot
= f(T
C
); V
GS
≥ 6 V I
D
= f(T
C
); V
GS
≥ 6 V
3 Safe operating area 4 Max. transient thermal impedance
I
D
= f(V
DS
); T
C
= 25 °C; D = 0 Z
thJC
= f(t
p
)
parameter: t
p
parameter: D=t
p
/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
ID[A]
VDS [V]
single pulse
0.01
0.05
0.1
0.5
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
ZthJC [K/W]
tp[s]
0
50
100
150
200
0 50 100 150 200
Ptot [W]
TC[°C]
0
50
100
150
200
0 50 100 150 200
ID[A]
TC[°C]
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5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
D
= f(V
DS
); T
j
= 25 °C R
DS(on)
= f(I
D
); T
j
= 25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
I
D
= f(V
GS
); V
DS
= 6V R
DS(on)
= f(T
j
); I
D
= 100 A; V
GS
= 10 V
parameter: T
j
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
-60 -20 20 60 100 140 180
RDS(on) [m]
Tj[°C]
-55 °C
25 °C
175 °C
0
175
350
525
700
2468
ID[A]
VGS [V]
5 V
5.5 V
6 V
6.5 V
10 V
7 V
0
175
350
525
700
01234567
ID[A]
VDS [V]
5 V
5.5 V
7 V
6 V
6.5 V
10 V
2
3
4
5
6
7
8
9
10
11
12
0 50 100 150
RDS(on) [m]
ID[A]
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IAUT150N10S5N035
9 Typ. gate threshold voltage 10 Typ. capacitances
V
GS(th)
= f(T
j
); V
GS
= V
DS
C= f(V
DS
); V
GS
= 0 V; f = 1 MHz
parameter: I
D
11 Typical forward diode characteristics 12 Typ. avalanche characteristics
IF = f(V
SD
)I
AS
= f(t
AV
)
parameter: T
j
parameter: T
j(start)
25 °C
100 °C
150 °C
1
10
100
1000
1 10 100 1000
IAV [A]
tAV [µs]
25 °C
175 °C
100
101
102
103
0 0.2 0.4 0.6 0.8 1 1.2 1.4
IF[A]
VSD [V]
Ciss
Coss
Crss
102
103
104
0 20406080100
C[pF]
VDS [V]
110 µA
110 µA
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
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13 Typical avalanche energy 14 Drain-source breakdown voltage
E
AS
= f(T
j
)V
BR(DSS)
= f(T
j
); I
D_typ
= 1 mA
parameter: I
D
15 Typ. gate charge 16 Gate charge waveforms
V
GS
= f(Q
gate
); I
D
= 100 A pulsed
parameter: V
DD
94
96
98
100
102
104
106
108
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
20 V
50 V
80V
0
1
2
3
4
5
6
7
8
9
10
0255075
VGS [V]
Qgate [nC]
40 A
150 A
75 A
0
100
200
300
400
25 75 125 175
EAS [mJ]
Tj[°C]
V
GS
Q
gate
Q
gs
Q
gd
Q
g
V
GS
Q
gate
Q
gs
Q
gd
Q
g
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IAUT150N10S5N035
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2017
All Rights Reserved.
Legal Disclaime
r
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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IAUT150N10S5N035
Revision History
Version
Version 1.0
Date
2017-10-02
Changes
Final Data Sheet
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