Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol Parameter Condition Ratings Units
VDRM Repetitive Peak Off-State Voltage 400 V
IT(AV) Average On-State Current Half Sine Wave : TC = 74 °C 0.5 A
IT(RMS) R.M.S On-State Current All Conduction Angle 0.8 A
ITSM Surge On-State Current 1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive 10 A
I2tI2t for Fusing t = 8.3ms 0.415 A2s
PGM Forward Peak Gate Power Dissipation 2 W
PG(AV) Forward Average Gate Power Dissipation 0.1 W
IFGM Forward Peak Gate Current 1 A
VRGM Reverse Peak Gate Voltage 5.0 V
TJOperating Junction Temperature - 40 ~ 125 °C
TSTG Storage Temperature - 40 ~ 150 °C
MCR100-6
Oct, 2002. Rev. 2
Features
◆ Repetitive Peak Off-State Voltage : 400V
◆ R.M.S On-State Current ( IT(RMS)= 0.8 A )
◆ Low On-State Voltage (1.2V(Typ.)@ ITM)
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
2. Gate
1. Cathode
Symbol
○
○
▼
1/5
SemiWell Semiconductor
Sensitive Gate
Silicon Controlled Rectifiers
TO-92
123
○
3. Anode
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol Items Conditions
Ratings
Unit
Min. Typ. Max.
IDRM Repetitive Peak Off-State
Current
VAK = VDRM or VRRM ; RGK = 1000 Ω
TC = 25 °C
TC = 125 °C
─
─
─
─
10
200
㎂
VTM Peak On-State Voltage (1) ( ITM = 1 A, Peak ) ─1.2 1.7 V
IGT Gate Trigger Current (2)
VAK = 6 V, RL=100 Ω
TC = 25 °C
TC = - 40 °C
─
─
─
─
200
500
㎂
VGT Gate Trigger Voltage (2)
VD = 7 V, RL=100 Ω
TC = 25 °C
TC = - 40 °C
─
─
─
─
0.8
1.2
V
VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ── V
dv/dt Critical Rate of Rise Off-State
Voltage
VD = Rated VDRM , Exponential wave-
form , RGK = 1000 Ω
TJ = 125 °C
500 800 ─V/㎲
di/dt
Critical Rate of Rise On-State
Current IPK = 20A ; PW = 10㎲ ; diG/dt = 1A/㎲
Igt = 20mA ──
50 A/㎲
IHHolding Current
VAK = 12 V, Gate Open
Initiating Curent = 20mA
TC = 25 °C
TC = - 40 °C
─
─
2
─
5.0
10
mA
Rth(j-c) Thermal Impedance Junction to case ──
60 °C/W
Rth(j-a) Thermal Impedance Junction to Ambient ──
150 °C/W
MCR100-6
2/5
※ Notes :
1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%
2. Does not include RGK in measurement.
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0
20
40
60
80
100
120
140
160
θ= 180
o
Max. Allowable Case Temperature [ oC]
Average On-State Current [A]
-50 0 50 100 150
0.1
1
10
IGT(toC)
IGT(25oC)
Junction Temperature[oC]
MCR100-6
Fig 2. Maximum Case Temperature
Fi
g
3
.
T
yp
i
ca
l
F
orwar
d
V
o
lt
age
Fi
g
4
.
Th
erma
l
R
esponse
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
Fi
g
6
.
T
yp
i
ca
l
G
ate
T
r
i
gger
C
urrent vs.
Junction Temperature
3/5
Fig 1. Gate Characteristics
10-1 100101102103104
10-1
100
101
IGM(1A)
VGD(0.2V)
PG(AV)(0.1W)
PGM(2W)
VGM(5V)
25oC
Gate Voltage [V]
Gate Current [mA]
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
10-1
100
101
125oC
25oC
On-State Current [A]
On-State Voltage [V]
10-2 10-1 100101102103
1
10
100
1000
Rθ(J-C)
Transient Thermal Impedance [ oC/W]
Time (sec)
-50 0 50 100 150
0.1
1
10
VGT(toC)
VGT(25oC)
Junction Temperature[oC]
θ
: Conduction Angl e
360°
θ
2
ππ
0.0 0.1 0.2 0.3 0.4 0.5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
θ= 180
o
θ= 120
o
θ= 90
o
θ= 60
o
θ= 30
o
Max. Average Power Dissipation [W]
Average On-State Current [A]
MCR100-6
Fi
g
7
.
T
yp
i
ca
l
H
o
ldi
ng
C
urren t Fig 8. Power Dissipation
4/5
-50 0 50 100 150
0.1
1
10
IH(toC)
IH(25oC)
Junction Temperature[oC]
Dim.
mm Inch
Min. Typ. Max. Min. Typ. Max.
A 4.2 0.165
B 3.7 0.146
C 4.43 4.83 0.174 0.190
D 14.07 14.87 0.554 0.585
E 0.4 0.016
F 4.43 4.83 0.174 0.190
G 0.45 0.017
H2.54 0.100
I2.54 0.100
J 0.33 0.48 0.013 0.019
TO-92 Package Dimension
1. Cathode
2. Gate
3. Anode
A
B
C
G
E
F
D
5/5
MCR100-6
HJ
1
2
3
I
