TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/350
T4-LDS-0170 Rev. 1 (101121) Page 1 of 4
DEVICES LEVELS
2N3867 2N3867S JAN
2N3868 2N3868S JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N3867 2N3868 Unit
Collector-Base Voltage VCBO 40 60 Vdc
Collector-Emitter Voltage VCEO 40 60 Vdc
Emitter-Base Voltage VEBO 4.0 Vdc
Collector Current IC 3.0 mAdc
Total Power Dissipation @ TA = +25°C (1) P
T 1.0 W/°C
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Max. Unit
Thermal Resistance, Junction-to-Ambient RθJA 175 °C/mW
Note: * Electrical characteristics for “S” suffix devices are identical to the “non S”
corresponding devices.
1/ Derate linearly 5.71mW/°C for TA > +25°C
2/ Derate linearly 57.1mW/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Current
V(BR)CEO
Vdc
IC = 10μAdc 2N3867, S
2N3868, S
40
60
Collector-Base Cutoff Current
VCB = 40Vdc
VCB = 60Vdc
2N3867, S
2N3868, S
ICBO 100 µAdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc IEBO 100 µAdc
Collector-Emitter Cutoff Current
VCE = 40Vdc
VCE = 60Vdc
VCE = 40Vdc, TA = +150°C
VCE = 60Vdc, TA = +150°C
2N3867, S
2N3868, S
2N3867, S
2N3868, S
ICEX
1.0
1.0
50
50
µAdc
TO-5 *
2N3867, 2N3 868
TO-39 * (TP-20 5 AD )
2N3867S, 2N3868S
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0170 Rev. 1 (101121) Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERTICS (2)
Forward-Current Transfer Ratio
hFE
IC = 500mAdc, VCE = 1.0Vdc 2N3867, S
2N3868, S
50
35
IC = 1.5Adc, VCE = 2.0Vdc 2N3867, S
2N3868, S
40
30
200
150
IC = 2.5Adc, VCE = 3.0Vdc 2N3867, S
2N3868, S
25
20
IC = 3.0Adc, VCE = 5.0Vdc 2N3867, S
2N3868, S
20
20
IC = 500mAdc, VCE = 1.0Vdc, TA = -55°C 2N3867, S
2N3868, S
25
17
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 500mAdc, IB = 50mAdc
IC = 1.5Adc, IB = 150mAdc
IC = 2.5Adc, IB = 250mAdc
0.5
0.75
1.5
Base-Emitter Saturation Voltage
VBE(sat)
Vdc
IC = 500mA, IB = 50mAdc 1.0
IC = 1.5A, IB = 150mAdc 2N3867, S
2N3868, S
0.9
0.85
1.4
1.4
IC = 2.5A, IB = 250mAdc 2.0
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio |hfe| 3 12 kΩ
IC = 100mAdc, VCE = 5.0Vdc, f = 20MHz
Output Capacitance
Cobo
pF
VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz 120
Iutput Capacitance
Cibo
pF
VEB = 3.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz 800
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0170 Rev. 1 (101121) Page 3 of 4
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Delay Time
Rise Time
VCC = -30dc, VEB = 0
IC = 1.5Adc, IB1 = 150mAdc
td
tr 35
65 nS
Storage Time
Fall Time
VCC = -30dc, VEB = 0
IC = 1.5Adc, IB1 = IB2 = 150mAdc
ts
tf 500
100 nS
Turn-On Time
VCC = 30, IC = 1.5Adc, IB = 150mA
ton 100 nS
Turn-Off Time
VCC = 30, IC = 1.5Adc, IB = 150mA
toff 600 nS
SAFE OPERATING AREA
DC Test
TC = 25°C, 1 cycle, t = 1.0s
Test 1
VCE = 3.33Vdc, IC = 3.0Adc
Test 2
VCE = 40Vdc, IC = 160mAdc
VCE = 60Vdc, IC = 80mAdc
2N3867,
2N3868, S
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0170 Rev. 1 (101121) Page 4 of 4
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. For non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-
suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max.
FIGURE 1. Physical dimensions (similar to TO-5, TO-39)
PACKAGE DIMENSIONS
Dimensions
Symbol Inches Millimeters Note
Min Max Min Max
CD .305 .335 7.75 8.51 5, 6
CH .240 .260 6.10 6.60
HD .335 .370 8.51 9.40 4, 5
LC .200 TP 5.08 TP 7
LD .016 .019 0.41 0.48 8,9
LL See note 8, 14
LU .016 .019 0.41 0.48 8,9
L1 .050 1.27 8,9
L2 .250 6.35 8,9
P .100 2.54 7
Q .030 0.76 5
TL .029 .045 0.74 1.14 3,4
TW .028 .034 0.71 0.86 3
R .010 0.25 10
α45° TP 45° TP 7
1, 2, 10, 12, 13, 14
TO-5, 39
