www.eicsemi.com RB721Q-40 SCHOTTKY BARRIER DIODE DO - 34 Glass PRV : 40 Volts IO : 30 mA 1.00 (25.4) min. 0.078 (2.0 )max. FEATURES : * Silicon epitaxial planar * Low forward voltage * Small pitch enables insertion on PCBs. * Glass sealed envelop for high reliability * Pb / RoHS Free 0.118 (3.0) max. Cathode Mark 1.00 (25.4) min. 0.017 (0.43)max. APPLICATIONS : * High speed switching Dimensions in inches and ( millimeters ) MECHANICAL DATA : * Case: DO-34 Glass Case * Weight: approx. 0.11g Maximum Ratings and Thermal Characteristics Parameter (Ta = 25 C ) Symbol VALUE Unit Maximum DC Reverse Voltage VR 40 V Maximum Peak Reverse Voltage VRM 40 V IF 30 mA IFSM 200 mA TJ 125 C TSTG -40 to + 125 C Maximum Forward Current Maximum Peak Forward Surge Current (60 Hz for sine wave) Junction Temperature Storage temperature range Electrical Characteristics Parameter (Ta = 25 C ) Symbol Test Condition Min Typ Max Unit Reverse Current IR VR = 25 V - - 0.5 A Forward Voltage VF IF = 1 mA - - 0.37 V Capacitance between terminals CT VR = 1 V, f = 1MHz - 2.0 - pF Page 1 of 2 Rev. 02 : December 3, 2008 www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( RB721Q-40 ) FIG.1 - DERATING CURVE FIG.2 - CAPACITANCE BETWEEN TERMINALS CHARACTERISTICS 10 FORWARD CURRENT, (mA) 30 CAPACITANCE BETWEEN TERMINALS, (pF) 25 20 15 10 5 1 Mounting on glass epoxy PCBs 0 0 25 50 75 100 0.1 0 125 5 AMBIENT TEMPERATURE, ( C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS 15 20 25 FIG. 4 - TYPICAL REVERSE CHARACTERISTICS 100 100 Pulse Pulse Measurement REVERSE CURRENT, (A) FORWARD CURRENT, (mA) 10 REVERSE VOLTAGE, (V) 10 1 Ta = 25 C 0.1 Ta = 100 C 10 1 0.1 Ta = 25 C 0.01 0.01 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE, (V) 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE, (V) Page 2 of 2 Rev. 02 : December 3, 2008