RB721Q-40 SCHOTTKY BARRIER DIODE
PRV : 40 Volts
IO : 30 mA
FEATURES :
* Silicon epitaxial planar
* Low forward voltage
* Small pitch enables insertion on PCBs.
* Glass sealed envelop for high reliability
* Pb / RoHS Free
APPLICATIONS :
* High speed switching
MECHANICAL DATA :
* Case: DO-34 Glass Case
* Weight: approx. 0.11g
Maximum Ratings and Thermal Characteristics (Ta = 25 °C )
Symbol Unit
Maximum DC Reverse Voltage VRV
Maximum Peak Reverse Voltage VRM V
Maximum Forward Current IF30 mA
Maximum Peak Forward Surge Current (60 Hz for sine wave) IFSM 200 mA
Junction Temperature TJ125 °C
Storage temperature range TSTG -40 to + 125 °C
Electrical Characteristics (Ta = 25 °C )
Parameter Symbol Min Typ Max Unit
Reverse Current IRVR = 25 V - - 0.5 µA
VFIF = 1 mA - - 0.37 V
Capacitance between terminals CTVR = 1 V, f = 1MHz - 2.0 - pF
Page 1 of 2 Rev. 02 : December 3, 2008
VALUE
40
40
Forward Voltage
Parameter
Test Condition
DO - 34 Glass
Dimensions in inches and ( millimeters )
0.078 (2.0 )max.
0.118 (3.0)
max.
0.017 (0.43)max.
1.00 (25.4)
min.
1.00 (25.4)
min.
Cathode
Mark
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FIG.1 - DERATING CURVE FIG.2 - CAPACITANCE BETWEEN
TERMINALS CHARACTERISTICS
0 25 50 75 100 125 0 5 10 15 20 25
AMBIENT TEMPERATURE, ( °C) REVERSE VOLTAGE, (V)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
Page 2 of 2 Rev. 02 : December 3, 2008
RATING AND CHARACTERISTIC CURVES ( RB721Q-40 )
25
20
15
10
30
0
10
0.1
1
0.1
25 30 4010 15 20 35
REVERSE VOLTAGE, (V)
CAPACITANCE BETWEEN
TERMINALS, (pF)
FORWARD CURRENT, (mA)
FORWARD CURRENT, (mA)
REVERSE CURRENT, (µA)
0.01
00.1 0.2 0.3 0.4 0.5
FORWARD VOLTAGE, (V)
5
0
1
10
100
5
0.01
0.1
1
10
100
Pulse Pulse Measurement
Ta = 25 °C Ta = 25 °C
Ta = 100 °C
Mounting on glass epoxy PCBs
0.6 0.7
0
.
00
1
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