Jun-16-2003
1
BFR360F
1
2
3
NPN Silicon RF Transistor
Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR360F FBs 1 = B 2 = E 3 = C TSFP-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 6 V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 2
Collector current IC35 mA
Base current IB4
Total power dissipation1)
TS
98°C
Ptot 210 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS
250 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
Jun-16-2003
2
BFR360F
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 6 9 - V
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO - - 1 µA
DC current gain-
IC = 15 mA, VCE = 3 V
hFE 60 130 200 -
Jun-16-2003
3
BFR360F
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 3 V, f = 1 GHz
fT11 14 - GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, emitter grounded
Ccb - 0.32 0.5 pF
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, base grounded
Cce - 0.2 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, collector grounded
Ceb - 0.4 -
Noise figure
IC = 3 mA, VCE = 3 V, ZS = ZSopt,
f = 1.8 GHz
Fmin - 1 - dB
Power gain, maximum available1)
IC = 15 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt , f = 1.8 GHz
IC = 15 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt , f = 3 GHz
Gma
-
-
15.5
11
-
-
Transducer gain
IC = 15 mA, VCE = 3 V, ZS = ZL = 50
,
f = 1.8 GHz
IC = 15 mA, VCE = 3 V, ZS = ZL = 50
,
f = 3 GHz
|S21e|2
-
-
13
9
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 15 mA, f = 1.8 GHz,
ZS = ZL = 50
IP3- 24 - dBm
1dB Compression point at output
IC = 15 mA, VCE = 3 V, ZS = ZL = 50
,
f = 1.8 GHz
P-1dB - 9 -
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
from 0.1 MHz to 6 GHz
Jun-16-2003
4
BFR360F
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
NF = 1-
ISE = 150 fA
NR = 1-
ISC = 20 fA
IRB = 75 µA
RC = 0.35
MJE = 0.5 -
VTF = 0.198 V
CJC = 473 fF
XCJC = 0.129 -
VJS = 0.75 V
EG = 1.11 eV
NK = 0.5 K
IS = 0.0689 fA
VAF = 20 V
NE = 2.4 -
VAR = 60 V
NC = 1.4 -
RBM = 7.31
CJE = 400 fF
TF = 9.219 ps
ITF = 1.336 mA
VJC = 0.864 V
TR = 1.92 ns
MJS = 0-
XTI = 0-
AF = 1 -
BF = 147 -
IKF = 77.28 mA
BR = 6 -
IKR = 0.3 A
RB = 0.1
RE = 78.2 m
VJE = 1.3 V
XTF = 0.115 -
PTF = 0 deg
MJC = 0.486 -
CJS = 0 fF
XTB = 0.5 K
FC = 0.954
KF = 1E-14 -
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
L1 = 0.556 nH
L2 = 0.657 nH
L3 = 0.381 nH
C1 = 43 fF
C2 = 123 fF
C3 = 66 fF
C4 = 10 fF
C5 =36 fF
C
6
= 47 fF
EHA07524
Transistor C’ L
E’
B’ 3
4
C
C
Chip
E
L1
5
C
B2
L
C6
C1
C2C3
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
Jun-16-2003
5
BFR360F
Total power dissipation Ptot =
(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
mW
240
Ptot
Permissible Pulse Load RthJS =
(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
Permissible Pulse Load
Ptotmax/PtotDC =
(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb=
(VCB)
f = 1MHz
0 2 4 6 8 10 12 V16
VCB
0
0.1
0.2
0.3
0.4
0.5
0.6
pF
0.8
Ccb
Jun-16-2003
6
BFR360F
Third order Intercept Point IP3=
(IC)
(Output, ZS=ZL=50
)
VCE = parameter, f = 1.8GHz
0 5 10 15 20 25 30 mA 40
IC
-5
0
5
10
15
20
dBm
30
IP3
6V
4V
3V
2V
1V
Transition frequency fT=
(IC)
f = 1GHz
VCE = parameter
0 5 10 15 20 25 30 mA 40
IC
0
2
4
6
8
10
12
14
GHz
17
fT
5V
3V
2V
1V
0.7V
Power gain Gma, Gms =
(IC)
f = 0.9GHz
VCE = parameter
0 5 10 15 20 25 30 mA 40
IC
12
13
14
15
16
17
18
19
20
21
22
dB
24
G
5V
3V
2V
1V
0.7V
Power gain Gma, Gms =
(IC)
f = 1.8GHz
VCE = parameter
0 5 10 15 20 25 30 mA 40
IC
8
10
12
14
dB
18
G
5V
3V
2V
1V
0.7V
Jun-16-2003
7
BFR360F
Power Gain Gma, Gms =
(f)
VCE = parameter
0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5
f
4
9
14
19
24
29
34
39
dB
49
G
Ic = 15mA
5V
2V
1V
0.7V
Insertion Power Gain |S21|² =
(f)
VCE = parameter
0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5
f
0
4
8
12
16
20
24
28
dB
36
G
Ic = 15mA
5V
2V
1V
0.7V
Power Gain Gma, Gms =
(VCE):
|S21|² =
(VCE): - - - -
f = parameter
012345V7
VCE
8
10
12
14
16
18
20
dB
24
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
Ic = 15mA
Power gain Gma, Gms =
(IC)
VCE = 3V
f = parameter
0 5 10 15 20 25 30 35 mA 45
IC
7
8
9
10
11
12
13
14
15
16
17
18
19
dB
22
G
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
Jun-16-2003
8
BFR360F
Noise figure NF =
(IC)
VCE = 3V, f = 1,8 GHz
0 5 10 15 20 25 30 35 mA 45
IC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
dB 3
F
F50
NFmin
Source impedance for min.
noise figure vs. frequency
VCE = 3 V
100
+j10
-j10
50
+j25
-j25
25
+j50
-j50
10
+j100
-j100
0
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
3mA
15mA
Package TSFP-3
0.1 M3x
A
M
0.1
1.2 ±0.05
0.4 0.4
3
21
±0.05
0.15
0.55
±0.05
0.8
1.2
A
10
˚
MAX.
0.2 -0.05
0.1 MIN.
±0.05
±0.05
±0.05
0.2
0.45
0.4
0.45
0.9
0.40.4
Manufacturer
Type code BCR847BF
Example
Pin 1
4
0.2
1.35
0.3
0.7
1.2
1.5
8
Pin 1
Package Outline
Foot Print
Marking Layout
Packing
Code E6327: Reel ø180 mm = 3.000 Pieces/Reel
Code E6433: Reel ø330 mm = 10.000 Pieces/Reel
Impressum
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
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systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
