~ 3875081 GE SOLID STATE gy pefas75081 ooLa4uLa O I T39-O9? T dtanaara Power MOSFETs File Number 1594 2N6796 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode N-CHANNEL ENHANCEMENT MODE Power Field-Effect Transistors 0 8.0A, 100V fos(On) = 0.18.2 Features: 6 * m SOA is power-dissipation limited Nanosecond switching speeds Linear transfer characteristics S High input impedance Majority carrier device S2cs-as741 TERMINAL DIAGRAM The 2N6796 is an n-channel enhancement-mode silicon- gate power field-effect transistors designed for applications TERMINAL DESIGNATION such as switching regulators, switching converters, motor GATE drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and tow gate- drive power. These types can be operated directly from ORAIN. integrated circuits. SOURCE (CASED The 2N6796 is supplied in the JEDEC TO-205AF (LOW PROFILE TO-39) metal package. 9208-37555 JEDEC TO-205AF Absolute Maximum Ratings ee = 56 to 150 cane 3613875061 GE SOLID STATE fy, vel 3875081 0018419 2 139-05 Standard Power MOSFETs 2N6796 362 Efectrical Characteristics @ Te = 25C (Unless Otherwise Sea Fig 10 Seo Fig, 16 (MOSFET switching umes are essentisty indapencent of operating temperature } Thermal Resistance [Aine __Junctiorto Case [L- [= [se Tcw!] _4 CRinja_ Junction-to Ambient L = T ~ TE 78 [ecw | Free alr Operation } Source-Drain Diode Switching Characteristics (Typical) te Reverse Recovery Time 300 [ons [Ty = 80C. ip = 8.0A, digit = 100Aie Opp Reverse Recovered Charge 15 L_w_ [Ty = 150C, ip = 80A, ple ~ 100AIn6 ton Forwaed Turron Tine lnulnsic turn-on tme le negligible, Turn-on spead Is substantially convoled by ts + lp Ty = 25C 10 160C, @ Pulse Test. Pulse with < 300y8, Duty Cycle < 2%. @ Repstitive Rating: Pulse width limited by ma: me lempetature. See Transient Theemal Impedance Curve (Fig. 6). JEDEC registeced value s 015 PULSE TEST Vos >!oten)* Aasiaal max Os PULSE FEST 2 a a 3 3 an Ty 12986 T Ty 2596 ( Ty -850C Ip. ORAIN CURRENT {AMPERES} 5 Ip, ORAIN CURRENT (AMPERES) a 10 20 30 40 59 o 2 4 8 10 Vg. ORAIN TO SOURCE VOLTAGE IVOLTS} Vg. GATE-TO-SDUACE VOLTAGE IVOLTS] Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics a s Sti PULSE TEST 3 LIMITED 8Y Aastony = so 8 o tg, ORAIN CURRENT (AMPERES) ip, RAIN CURRENT (AMPERES) 10 ter OS T-T Ty 15096 MAX, Ainge 7 50 - 02-4] SINGLE PULSE a1 o 1 2 3 4 5 6 10 5 WW 20 $0 100 700 = 800 Vos. ORAIN TO SOURCE VOLTAGE (VOLTS) Vog. ORAIN TO SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area\ 3675081 GE soLio state gi ef za7soa1 on1sy20 4 = 39-09 Standard Power MOSFETs ~ . z 3 & = 10 es Ee : Be os gt fur Sy 33 0 baa zs Le ty 22 cos 3S 1 auTy Factor. o - 3 2 Soo 2 PERUNITOASE Rinse S0DEG CW 3 IMPEDANCE) 3 Ta Te + Pom Ziettd 90 a 5 2 5 wt oF $ yd? ip? 2 Sgt 2 5 ow 2 11, SQUARE WAVE PULSE DURATION {SECONDS} Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs, Pulse Ouration Was PUtSE 12 --__ Vos > 'ofen) * Boston} nae, 6 Tye $500 Tye he Ot, TRANSCONDUCTANCE (SIEMENS) igg, REVERSE ORAIN CURRENT (AMPERES) 5 1S 30 0 05 10 18 Fr zs 30 tp, ORAIN CURRENT (AMPERES) Vso. SOURCE TO DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs, Drain Current Fig. 7 ~ Typical Source-Orain Diode Forward Voltage 128 120 (NORMALIZED) 8 & S & le R {NCQAMALIZED: BV pss ORAIN-TO SOURCE SREAKOOWN VOLTAGE Rosianp DRAIN TO SOURCE ON STATE RESISTANCE 07s q HO 40-70 0 20 G1 40 400-2000 0 OD s20s 180 Ty, JUNCTION TEMPERATURE (C) Ty. JUNCTION TEMPERATURE (9C} Fig. 8 Breakdown Valtage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. TemperatureOL DEM 3875081 0018421 o > 3875081 G E SOLID STATE OTE 18421 DTSR9DO9 Standard Power MOSFETs 2N6796 364 2000 g Vos * 20V 1600 cu * Coe + Cya. Cay SHORTED 3 yes 1 ng 7 a 1 eas 2 ev = Cons = Cay? Erte z 3 = 0 Cg * Cyd = < Fd z 2 g 2 5 2 e < oa OA oO > 6 16 a uw a 30 Q 4 16 u R 40 Vos ORAt% TO SOURCE VOLTAGE VOLTS! Oy. TOTAL GATE CHAAGE (nC) }. 10 Typical Capacitance Vs, Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 10 o8 T T | A Sfoxy MEASUREO WITH CURRENT PULSE OF 28 ws duration ANUTEAL tyr 25C INEATING oy 3 z & = (OS F EFFECE OF 20 a5 PULSE is MINIMAL } a 5 ' g Bou i } i S = I : | g Zz Vos + 10v S 8 It t a g 03 | & 2 > 2 I 3 2 3 =z 02 S < : = a = 3 = 2 a 3 rh Vgg 20v fy q 10 20 0 40 s0 60 Pry 50 B 100 125 180 fg. ORAIN CURRENT (AMPERES) Tg, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature 40 % 0 Pr, POWER DISSIPATION (WATTS) 3S a 20 ag 60 a0 1nd HO 149 Te, CASE TEMPERATURE {9C) Fig. 14 ~ Power Vs. Temperature Derating Curvea ___ O1 ve Baazsoas OO1a4e2 2 3875081 GE SOLID STATE UIE 18422 E -39-09 Stanaara rower MOSFEITS 2N6796 Vastonl tov. INPUT 50%. , , Vasiei) & . WWPUT PULSE INPUT PULSE aISE TIME FALL TIME n Yostoll Fe TEKTAONIX output aO1OA, PULSE oe, Vosiont GEN. . . notes: WHEN MEASUMING ARISE TIME, Vggign) SHALL WE AS SPECIFIED ON THE INPUT WAVEFORM. WHEN MEASURING FALL TIME, Ygsioin, SHALL GE SPECIFIED ON THE INPUT WAVEFORM, THE INPUT TRANSITION AND ORAIM VOLTAGE RE- VO SPONSE DETECTOR SHALL HAVE RISE ANO FALL RESPONSE TIMES SUCH THAT HOTES; DOUBLING THESE RESPONSES WILL NOT AFFECT THE RESULTS GREATER 1, LHO063 CASE GROUNDED. THAN THE PRECISION OF MEASUREMENT, THE CURAENT SHALL BE SUFFI 7 GROUNDED CONNECTIONS COMMGN TO GROUNG PLANE ON BOARD. CIENTLY SMALL SO THAT DOUBLING IT DOES NOT AFFECT TESTS RESULTS 2 PULSE WIDTH 3 ps, PERIGO* 1 ms, AMPLITUDE 10. GREATER THAN THE PRECISION OF MEASUREMENT. Fig. 15 Switching Time Teit Clreult BLOCKING DIOGE 41n NOTES: 1. SET Vgg TO THE VALUE SPECIFIED UNDER DETAILS USING A 0.11 PULSE WIOTH wiTH A MINIMUM OF 1 MINUTE BETWEEN PULSES INCREASE Vg UNTIL THE SPECIFIED VALUE OF Ip AND Vgg ARE OBTAINED. CASE TEMPERATURE = 25C, + 2, SELECT Ag SUCH THAT Ig # Rs = 25 10 Vic. Fig. 16 Safe Operating Area Tast Circuit + 365