A D V A N C E D S E M I C O N D U C T O R, I N C. REV. E
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 35 V
BVCES IC = 200 mA 65 V
BVEBO IE = 10 mA 4.0 V
ICBO VBE = 30 V 2.0 mA
hFE VCE = 5.0 V IC = 200 mA 35.0 --- ---
Cob VCB = 28 V f = 1.0 MHz 250 pF
fT VCE = 28 V IC = 200 mA f = 100 MHz 50 MHz
PG
η
ηη
ηC VCC = 28 V POUT = 25 W f = 175 MHz 8.5
60 dB
%
NPN SILICON RF POWER TRANSISTOR
VHB25-28F
DESCRIPTION:
The ASI VHB25-28F is an NPN
power transistor, designed for 108-175
MHZ applications. The device utilizes
diffused emitter resistor to achieve
good VSWR capabilit y.
FEATURES:
• Common Emitter – Class-C
• PG = 10 dB at 30 W/150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 4.0 A
VCBO 65 V
VEBO 4.0 V
VCEO 35 V
PDISS 40 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 4.4 °C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10724
MINIMUM
inches / mm
.970 / 24.6 4
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.8 9
inches / mm
H.160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J.240 / 6.10 .255 / 6.48
.785 / 19.9 4
F
B
G
.125
Ø.125 NOM .
FULL R
D E
C
H
.112 x 45° A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.2 9 .730 / 18.5 4
C
B E
E
