DATA SHEET NPN SILICON RF TRANSISTOR NE46134 / 2SC4536 JEITA Part No. DESCRIPTION UT NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD The NE46134 / 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other FEATURES O use, it employs plastic surface mount type package (SOT-89). * Low distortion: IM2 = 59.0 dBc TYP., IM3 = 82.0 dBc TYP. @ VCE = 10 V, IC = 50 mA * Low noise: NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz * Large Ptot : Ptot = 2.0 W (Mounted on double-sided copper-clad 16 cm2 x 0.7 mm (t) ceramic substrate) AS E- * Small package : 3-pin power minimold package ORDERING INFORMATION Part Number Quantity Supplying Form NE46134-AZ 2SC4536-AZ 25 pcs (Non reel) NE46134-T1-AZ 2SC4536-T1-AZ 1 kpcs/reel * 12 mm wide embossed taping * Collector face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Symbol Ratings Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 3.0 V IC 250 mA Ptot 2.0 W PH Parameter Collector Current Total Power Dissipation Note Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C 2 Note Mounted on double-sided copper-clad 16 cm x 0.7 mm (t) ceramic substrate Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10338EJ01V0DS (1st edition) (Previous No. P10369EJ2V1DS00) Date Published May 2003 CP(K) The mark shows major revised points. NE46134 / 2SC4536 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics ICBO VCB = 20 V, IE = 0 mA - - 5.0 A Emitter Cut-off Current IEBO VEB = 2 V, IC = 0 mA - - 5.0 A VCE = 10 V, IC = 50 mA 60 - 200 - 5.5 7.2 - dB hFE DC Current Gain Note 1 RF Characteristics UT Collector Cut-off Current Insertion Power Gain S21e2 VCE = 10 V, IC = 50 mA, f = 1 GHz Noise Figure (1) NF Note 2 VCE = 10 V, IC = 50 mA, f = 500 MHz - 1.5 - dB Noise Figure (2) NF Note 2 VCE = 10 V, IC = 50 mA, f = 1 GHz - 2.0 - dB IM2 VCE = 10 V, IC = 50 mA, RS = RL = 75 , VO = 105 dBV/75 , f1 = 190 MHz, f2 = 90 MHz, f = f1 - f2 - 59.0 - dBc 3rd Order Intermoduration Distortion IM3 VCE = 10 V, IC = 50 mA, RS = RL = 75 , VO = 105 dBV/75 , f1 = 190 MHz, f2 = 200 MHz, f = 2 x f1 - f2 - 82.0 - dBc O 2nd Order Intermoduration Distortion Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% AS E- 2. RS = RL = 50 , tuned hFE CLASSIFICATION QR QS Marking QR QS hFE Value 60 to 120 100 to 200 PH Rank 2 Data Sheet PU10338EJ01V0DS NE46134 / 2SC4536 TYPICAL CHARACTERISTICS (TA = +25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 500 Free Air Rth (j-a) 312.5C/W 400 25 50 75 100 125 150 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 0.5 mA 0.2 1 300 60 0.3 mA 40 0.2 mA 20 0.1 mA 10 10 DC Current Gain hFE 0.4 mA 80 0 5 30 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 10 V 50 30 10 0.1 1 10 100 1 000 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAXIMUM POWER GAIN, MAG vs. FREQUENCY VCE = 10 V 5 2 1 0.5 0.2 5 10 100 20 PH Gain Bandwidth Product fT (GHz) 0.5 AS E- Collector Current IC (mA) 100 1 Collector to Base Voltage VCB (V) Ambient Temperature TA (C) IB = 0.6 mA 2 O 0 f = 1 MHz IE = 0 mA UT Ceramic Substrate 16 cm2 x 0.7 mm (t) Rth (j-a) 62.5C/W 1 500 1 000 Reverse Transfer Capacitance Cre (pF) 2 000 5 10 30 50 100 300 Insertion Power Gain |S21e|2 (dB) Maximum Power Gain Gmax (u) (dB) Maximum Available Power Gain MAG (dB) Total Power Dissipation Ptot (mW) 2 500 20 VCE = 10 V IC = 50 mA Gmax (u) |S21e|2 MAG 10 0 0.1 0.2 0.3 0.5 1 2 3 Frequency f (GHz) Collector Current IC (mA) Data Sheet PU10338EJ01V0DS 3 NE46134 / 2SC4536 10 Gmax (u) |S21e|2 6 4 2 VCE = 10 V f = 1 GHz 0 10 30 50 100 300 2 1 0 5 10 20 70 O IM3 60 IM2+ IM2- 50 40 30 10 IM3 : VO = 110 dBV/75 2 tone each f = 2 x 190 - 200 MHz IM2+ : VO = 105 dBV/75 2 tone each f = 90 + 100 MHz IM2- : VO = 105 dBV/75 2 tone each f = 190 - 90 MHz 30 50 100 300 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. PH S-PARAMETERS 4 3 AS E- 3rd Order Intermodulation Distortion IM3 (dBc) 2nd Order Intermodulation Distortion (+) IM2+ (dBc) 2nd Order Intermodulation Distortion (-) IM2- (dBc) IM3, IM2+, IM2- vs. COLLECTOR CURRENT VCE = 10 V 4 50 Collector Current IC (mA) Collector Current IC (mA) 80 VCE = 10 V f = 1 GHz UT 8 NOISE FIGURE vs. COLLECTOR CURRENT 5 MAG Noise Figure NF (dB) Insertion Power Gain |S21e|2 (dB) Maximum Power Gain Gmax (u) (dB) Maximum Available Power Gain MAG (dB) INSERTION POWER GAIN, MAXIMUM POWER GAIN, MAG vs. COLLECTOR CURRENT Data Sheet PU10338EJ01V0DS 100 200 NE46134 / 2SC4536 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (UNIT: mm) 4.50.1 1.50.1 0.420.06 0.470.06 B 4.00.25 2.50.1 C E UT 0.8 MIN. 1.60.2 0.420.06 1.5 O 3.0 0.41+0.03 -0.06 PIN CONNECTIONS AS E- E : Emitter C : Collector (Fin) B : Base PH (IEC : SOT-89) Data Sheet PU10338EJ01V0DS 5 NOTICE Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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