NPN Silicon AF Transistor: BCX54/BCX55/BCX56 Features: tFor AF driver and output stages tHigh collector current tLow collector-emitter saturation voltage tComplementary types:BCX51/BCX52/BCX53 SOT-89 Ordering Information Type No. Marking: Package Code: BCX54 BA SOT-89 BCX54-10 BC SOT-89 BCX54-16 BD SOT-89 BCX55 BE SOT-89 BCX55-10 BG SOT-89 BCX55-16 BM SOT-89 BCX56 BH SOT-89 BCX56-10 BK SOT-89 BCX56-16 BL SOT-89 Maximum Ratings & Characteristics: Tamb=25o Parameter: Symbol: Value: Unit: Collector - Base Voltage - BCX54 - BCX55 - BCX56 VCBO -45 -60 -100 V Collector - Emitter Voltage - BCX54 - BCX55 - BCX56 VCEO -45 -60 -80 V Emitter - Base Voltage Vebo 5 V DC Collector Current IC 1 A Peak Collector Current ICM 1.5 A Base Current IB 100 mA IBM 200 mA Total Power Dissipation, TS=130 C PTOT 500 mW Junction and Storage Temperature Tj, Tstg -65 to +150 o Peak Base Current o O[[W!^^^MHYULSSJVT O[[W!^^^UL^HYRJVT O[[W!^^^JWJJV\R C Maximum Ratings & Characteristics: Tamb=25o Parameter: Symbol: Test Conditions: Collector - Base Breakdown Voltage V(BR)CBO IC=-100A, IE=0 BCX54 BCX55 BCX56 45 60 100 V Collector - Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 BCX54 BCX55 BCX56 45 60 80 V Emmiter - Base Breakdown Voltage V(BR)EBO IE=-10A, IC=0 5 V ICBO VCB=-30V, IE=0 VCB=30V, IE=0,TA=150oC hFE VCE=-2V, IC=-5mA VCE=-2V, IC=-150mA VCE=-2V, IC=-150mA -10 -16 VCE=-2V, IC=-500mA DC Current Gain Min: Typ: Max: 100 20 25 40 63 100 25 Unit: nA A 250 160 250 Collector - Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA 0.5 V Base Emitter Voltage VBE IC=-500mA ,VCE=-2V 1 V Transition Frequency fT VCE=-10, IC=-50, f=20MH O[[W!^^^MHYULSSJVT O[[W!^^^UL^HYRJVT O[[W!^^^JWJJV\R 100 MHz Typical Characteristics: Tamb=25 o Ratings & Characteristic Curves O[[W!^^^MHYULSSJVT O[[W!^^^UL^HYRJVT O[[W!^^^JWJJV\R Typical Characteristics: Tamb=25 o Ratings & Characteristic Curves O[[W!^^^MHYULSSJVT O[[W!^^^UL^HYRJVT O[[W!^^^JWJJV\R Package Outline O[[W!^^^MHYULSSJVT O[[W!^^^UL^HYRJVT O[[W!^^^JWJJV\R