NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features * Operates Over a Wide Range of Voltages and Frequencies Surface Mount Package SOT-343 (SC-70) Outline 4T * +25.0 dBm P1dB and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ. * 15 dB G1dB @ 900 MHz, 4.8 Volts, Typ. * -35 dBc IMD3 @ Pout of +14 dBm per tone, 900 MHz, 3 Volts, Typ. * +21.5 dBm P1 dB and 50% Collector Efficiency @ 1900 MHz, 3 Volts, Typ. Applications * Driver Amplifier for GSM and AMPS/ETACS/NMT Cellular Phones * 900 and 1800 MHz ISM * Special Mobile Radio, CATV * 1900 MHz US PCS Pin Configuration 2 3 Emitter 4 Collector Base 1 Emitter Description Agilent's AT-38043 is a low cost, NPN silicon bipolar junction transistor housed in a miniature SC-70 surface mount plastic package. This device can be used as a pre-driver, driver, or output device in many applications for cellular and other wireless communications markets. At 4.8 volts, the AT-38043 features +25 dBm output power, while providing 15 dB of gain and 60% collector efficiency. Superior efficiency and gain make the AT-38043 an excellent choice for battery powered systems. The AT-38043 is fabricated with Agilent's 10 GHz Ft Self-AlignedTransistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices. 2 AT-38043 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Units Absolute Maximum[1] V V V mA mW C C 1.4 16.0 9.5 160 500 150 -65 to 150 Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2] Junction Temperature Storage Temperature Thermal Resistance[3]: jc = 130C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Derate at 7.7 mW/C for TC > 85C. TC is defined to be the temperature of the collector pin 4, where the lead contacts the circuit board. 3. Using the liquid crystal technique, VCE = 4.8 V, IC = 50 mA, TJ = 150C, 1- 2 m "hot-spot" resolution. Electrical Specifications, TC = 25C Freq. = 900 MHz, VCE = 4.8 V, ICQ = 15 mA, CW operation, Test Circuit A, unless otherwise specified Symbol P1dB Parameters and Test Conditions Output Power @ 1 dB Gain Compression[1] Gain [1] G1dB 1 dB Compression C Collector Efficiency @ 1 dB Gain Compression[1] Mismatch Tolerance, No Damage [1] IMD3 3rd Order Intermodulation Distortion, 2-Tone Test, Pout each tone = +14 dBm [1] BVEBO Emitter-Base Breakdown Voltage BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage hFE Forward Current Transfer Ratio ICEO Collector Leakage Current Units Min. Typ. dBm +23.5 +25.0 dB 13.5 15.0 % 45 60 Pout = +25 dBm any phase, 2 sec duration F1 = 899 MHz F2 = 901 MHz VCE = 3.0 V Max. 7:1 dBc -35 IE = 0.2 mA, open collector V 1.4 IC = 1.0 mA, open emitter V 16.0 IC = 3.0 mA, open base V 9.5 VCE = 3 V, IC = 160 mA -- 50 VCEO = 5 V A Note: 1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A. 150 330 15 3 AT-38043 Typical Performance, TC = 25C c 8 20 G 1dB 4 450 800 900 1000 17 c 13 9 20 800 FREQUENCY (MHz) -50 -30 IMD5 -50 -60 10 11 12 13 14 15 40 G 1dB 10 20 800 16 17 OUTPUT POWER/TONE (dBm) Figure 4. IMD3, IMD5 vs. Output Power (per tone) at VCE = 3.0 V and ICQ = 15 mA, Frequency = 450 MHz. 900 1000 0 1800 1900 2000 FREQUENCY (MHz) 0 source = 0.854 -142 load = 0.650 173 -10 -30 IMD3 -40 IMD5 -50 -60 9 60 -20 IMD3 -40 IMD5 8 15 80 Figure 3. Output Power, Gain, and Collector Efficiency vs. Frequency at VCE = 4.8 V, ICQ = 15 mA. -20 -30 -40 c 20 5 450 0 1800 1900 2000 source = 0.865 -164 load = 0.500 153 -10 IMD (dBc) IMD (dBc) 0 IMD3 -20 1000 Figure 2. Output Power, Gain, and Collector Efficiency vs. Frequency at VCE = 3.0 V, ICQ = 15 mA. source = 0.855 170 load = 0.576 149 -10 900 P 1dB 25 FREQUENCY (MHz) Figure 1. Output Power, Gain, and Collector Efficiency vs. Frequency at VCE = 1.2 V, ICQ = 15 mA. 0 40 G 1dB 5 450 0 1800 1900 2000 60 100 -60 2 4 6 8 10 12 14 16 18 20 OUTPUT POWER/TONE (dBm) Figure 5. IMD3, IMD5 vs. Output Power (per tone) at VCE = 3.0 V and ICQ = 15 mA, Frequency = 900 MHz. 1 3 5 7 9 11 13 15 17 19 21 OUTPUT POWER/TONE (dBm) Figure 6. IMD3, IMD5 vs. Output Power (per tone) at VCE = 3.0 V and ICQ = 15 mA, Frequency = 1900 MHz. COLLECTOR EFFICIENCY (%) 40 80 IMD (dBc) 12 21 OUTPUT POWER (dBm), GAIN (dB) 60 OUTPUT POWER (dBm), GAIN (dB) P 1dB 16 30 100 P 1dB COLLECTOR EFFICIENCY (%) 25 80 COLLECTOR EFFICIENCY (%) OUTPUT POWER (dBm), GAIN (dB) 20 4 AT-38043 Typical Performance Under Pulsed Operation, TC = 25C VCE = 3.0 V, ICQ = 15 mA, pulse width = 577 s, unless otherwise specified Frequency = 900 MHz Duty Cycle Parameters P 1dB 12.5% 22.8 33% 22.7 50% 22.6 100% = CW 22.5 G1dB 13.7 13.6 13.5 13.4 c 57.6 58.0 57.3 56.1 P 3dB 23.5 23.5 23.5 23.6 G 3dB 11.7 11.6 11.5 11.4 c 64.5 65.7 66.0 66.0 Frequency = 1900 MHz Duty Cycle Parameters P 1dB 12.5% 21.7 33% 21.6 50% 21.6 100% = CW 21.6 G1dB 7.4 7.4 7.3 7.3 c 51.7 52.0 52.2 50.4 P 3 dB 24.1 23.9 23.8 23.8 G 3 dB 5.4 5.5 5.3 5.3 c 64.6 64.3 64.5 63.1 5 AT-38043 Typical Large Signal Impedances Freq. ( MHz ) Bias VCE (V) ICQ (mA) source Mag. Ang. load Mag. Ang. 450 450 450 800 800 800 1.2 3.0 4.8 1.2 3.0 4.8 15.0 15.0 15.0 15.0 15.0 15.0 0.873 0.855 0.873 0.886 0.896 0.899 169.4 170.3 176.3 -166.6 -170.9 -167.8 0.602 0.576 0.593 0.607 0.505 0.530 163.5 148.7 133.2 173.4 151.1 131.0 900 900 900 900 900 1000 1000 1000 1800 1800 1800 1.2 3.0 3.6 4.8 6.0 1.2 3.0 4.8 1.2 3.0 4.8 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 0.861 0.865 0.897 0.877 0.872 0.867 0.877 0.881 0.830 0.863 0.870 -160.1 -164.1 -165.9 -165.7 -166.4 -162.9 -163.7 -162.7 -138.2 -145.3 -146.2 0.576 0.500 0.528 0.479 0.494 0.656 0.590 0.575 0.598 0.633 0.603 175.4 153.3 147.6 137.9 128.2 171.0 150.5 139.8 -176.1 175.8 164.3 1900 1900 1900 1900 1900 2000 2000 2000 1.2 3.0 3.6 4.8 6.0 1.2 3.0 4.8 15.0 15.0 15.0 15.0 15.0 15.0 15.0 15.0 0.839 0.854 0.895 0.842 0.907 0.855 0.866 0.864 -138.4 -142.0 -149.4 -138.2 -149.3 -143.5 -140.1 -140.0 0.642 0.650 0.666 0.610 0.636 0.705 0.673 0.682 -178.5 172.6 171.1 166.4 156.4 177.5 173.0 163.0 6 AT-38043 Spice Model Parameters 3.2 Die Model 3.0 2.8 CPad CPad Ccb (pF) C CPad B 2.6 2.4 2.2 2.0 Die Area = 0.67 CPad = 0.36 pF Label BF IKF ISE NE VAF NF TF XTF VTF ITF PTF XTB BR IKR ISC NC VAR Value 280 299.9 9.9E-11 2.399 33.16 0.9935 1.6E-11 0.006656 0.02785 0.001 23 0 54.61 81 8.7E-13 1.587 1.511 1.8 E1 0 E2 Label NR TR EG IS XTI CJC VJC MJC XCJC FC CJE VJE MJE RB RE RC 1 2 3 4 5 6 7 8 Value 0.9886 1E-9 1.11 3.598E-15 3 1.02 pF 0.4276 0.2508 0.001 0.999 0.98 pF 0.811 0.596 5.435 1.30 0.01 B L = La C = Ca C L = Lb R = Rb L = La C = Cb C = Cb E1 L = La C = Ca Label Value Ra 0.1 Rb 0.2 La 0.85 nH Lb 0.25 nH Ca 0.01 pF Cb 0.01 pF R = Ra C = Ca C B R = Ra 10 Figure 7. Collector-Base Capacitance vs. Collector-Base Voltage (DC Test). Packaged Model R = Ra 9 Vcb (V) E2 L = Lb R = Rb L = Lb R = Rb C = Cb L = La C = Cb E R = Ra C = Ca 7 AT-38043 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 1.2 V, IC = 50 mA, TC = +25C Freq. S11 S21 S12 GHz Mag Ang dB Mag Ang dB 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.25 3.50 3.75 4.00 4.25 4.50 4.75 5.00 0.74 0.79 0.83 0.84 0.84 0.84 0.83 0.84 0.84 0.84 0.84 0.85 0.85 0.85 0.86 0.86 0.87 0.87 0.88 0.89 0.89 0.90 0.90 -84 -122 -157 -174 178 175 173 169 165 161 157 152 148 144 141 138 136 134 133 131 129 128 127 29.4 26.2 19.5 13.7 10.1 8.6 7.7 5.9 4.2 2.9 1.9 0.7 -0.3 -1.1 -2.0 -2.9 -3.6 -4.3 -5.0 -5.8 -6.5 -7.0 -7.6 29.45 20.32 9.41 4.82 3.21 2.70 2.43 1.97 1.63 1.40 1.24 1.09 0.97 0.88 0.80 0.72 0.66 0.61 0.56 0.51 0.48 0.45 0.42 147 132 129 146 168 -178 -169 -145 -122 -97 -73 -49 -24 1 26 52 78 105 131 158 -175 -147 -121 -28.9 -26.2 -24.9 -24.5 -24.2 -23.9 -23.8 -23.2 -22.8 -22.4 -21.8 -21.5 -21.1 -20.6 -20.3 -20.0 -19.6 -19.2 -19.0 -18.9 -18.7 -18.4 -18.2 Mag 0.036 0.049 0.057 0.060 0.061 0.064 0.065 0.069 0.072 0.076 0.081 0.084 0.088 0.093 0.097 0.100 0.105 0.109 0.112 0.114 0.116 0.121 0.124 S22 Ang Mag Ang 58 47 50 78 110 130 144 176 -152 -120 -89 -58 -27 4 34 64 94 124 153 -178 -147 -118 -89 0.79 0.64 0.52 0.51 0.52 0.50 0.51 0.49 0.51 0.52 0.51 0.54 0.56 0.55 0.55 0.57 0.57 0.57 0.59 0.62 0.64 0.65 0.67 -48 -73 -80 -42 12 45 70 125 -180 -120 -63 -7 55 113 168 -135 -76 -19 37 95 155 -147 -92 AT-38043 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 3.0 V, IC = 50 mA, TC = +25C Freq. S11 S21 S12 GHz Mag Ang dB Mag Ang dB 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.25 3.50 3.75 4.00 4.25 4.50 4.75 5.00 0.75 0.78 0.81 0.82 0.82 0.82 0.82 0.82 0.83 0.83 0.83 0.84 0.84 0.84 0.85 0.85 0.86 0.86 0.87 0.88 0.89 0.90 0.90 -66 -106 -149 -169 -179 178 176 171 167 163 159 154 150 146 142 139 137 135 134 132 130 129 128 30.5 28.0 21.8 16.1 12.6 11.1 10.2 8.3 6.7 5.3 4.2 3.1 2.1 1.2 0.3 -0.6 -1.4 -2.2 -2.9 -3.7 -4.5 -5.0 -5.7 33.53 25.02 12.34 6.40 4.27 3.59 3.22 2.61 2.16 1.85 1.63 1.43 1.27 1.15 1.03 0.93 0.85 0.78 0.71 0.65 0.60 0.56 0.52 154 140 133 148 170 -177 -167 -144 -120 -96 -72 -48 -23 2 27 52 78 105 131 157 -176 -149 -122 -31.2 -27.7 -25.8 -25.3 -25.0 -24.8 -24.6 -24.1 -23.7 -23.2 -22.6 -22.2 -21.8 -21.3 -20.9 -20.6 -20.2 -19.7 -19.4 -19.2 -19.0 -18.7 -18.4 Mag 0.028 0.041 0.051 0.054 0.056 0.058 0.059 0.062 0.065 0.069 0.074 0.077 0.081 0.086 0.090 0.094 0.098 0.103 0.107 0.109 0.112 0.117 0.120 S22 Ang Mag Ang 65 53 54 80 112 132 145 178 -150 -117 -85 -55 -23 8 38 69 99 129 158 -173 -143 -113 -84 0.84 0.67 0.47 0.42 0.42 0.41 0.41 0.40 0.41 0.43 0.43 0.46 0.48 0.47 0.48 0.50 0.51 0.51 0.53 0.57 0.60 0.61 0.62 -33 -52 -62 -29 22 55 80 135 -171 -111 -53 2 64 123 177 -126 -67 -9 46 103 163 -140 -85 8 AT-38043 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 3.6 V, IC = 50 mA, TC = +25C Freq. S11 S21 S12 GHz Mag Ang dB Mag Ang dB 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.25 3.50 3.75 4.00 4.25 4.50 4.75 5.00 0.75 0.78 0.81 0.82 0.82 0.82 0.82 0.82 0.83 0.83 0.83 0.83 0.84 0.84 0.84 0.85 0.85 0.86 0.87 0.88 0.89 0.90 0.90 -65 -104 -148 -169 -178 178 176 171 167 163 159 154 150 146 142 140 137 135 134 132 130 129 128 30.6 28.1 22.0 16.4 12.8 11.3 10.4 8.5 6.9 5.5 4.4 3.3 2.3 1.4 0.5 -0.4 -1.2 -2.0 -2.7 -3.5 -4.3 -4.8 -5.5 33.94 25.49 12.64 6.57 4.38 3.68 3.30 2.67 2.21 1.89 1.67 1.46 1.30 1.18 1.06 0.95 0.87 0.80 0.73 0.67 0.61 0.57 0.53 154 140 133 148 170 -177 -167 -144 -120 -95 -71 -48 -23 2 27 52 78 105 131 157 -176 -149 -122 -31.3 -27.8 -25.9 -25.4 -25.1 -24.8 -24.7 -24.2 -23.8 -23.3 -22.7 -22.3 -21.9 -21.4 -21.0 -20.6 -20.2 -19.8 -19.5 -19.3 -19.0 -18.7 -18.4 Mag 0.027 0.041 0.050 0.054 0.055 0.057 0.058 0.062 0.065 0.068 0.073 0.077 0.081 0.085 0.090 0.093 0.098 0.102 0.106 0.109 0.112 0.116 0.120 S22 Ang Mag Ang 65 54 54 80 112 132 145 178 -150 -117 -85 -54 -23 8 39 69 99 129 158 -172 -142 -113 -84 0.84 0.67 0.46 0.41 0.41 0.40 0.41 0.39 0.40 0.42 0.42 0.45 0.47 0.47 0.47 0.49 0.50 0.50 0.53 0.57 0.59 0.60 0.62 -32 -50 -60 -28 23 56 81 136 -170 -110 -52 2 65 124 178 -125 -66 -8 47 104 164 -139 -84 AT-38043 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 4.8 V, IC = 50 mA, TC = +25C Freq. S11 S21 S12 GHz Mag Ang dB Mag Ang dB 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.25 3.50 3.75 4.00 4.25 4.50 4.75 5.00 0.77 0.79 0.81 0.81 0.81 0.81 0.81 0.82 0.82 0.82 0.83 0.83 0.83 0.84 0.84 0.85 0.85 0.86 0.87 0.88 0.89 0.89 0.90 -63 -102 -147 -168 -178 179 176 172 167 163 159 155 150 146 143 140 138 136 134 132 130 129 128 30.8 28.3 22.3 16.6 13.1 11.6 10.6 8.8 7.2 5.8 4.7 3.6 2.5 1.7 0.7 -0.2 -1.0 -1.7 -2.5 -3.3 -4.0 -4.6 -5.3 34.50 26.10 13.02 6.78 4.52 3.79 3.41 2.75 2.28 1.95 1.72 1.51 1.34 1.21 1.09 0.98 0.89 0.82 0.75 0.68 0.63 0.59 0.54 155 141 133 148 170 -176 -167 -143 -120 -95 -71 -47 -22 3 27 53 79 105 131 157 -176 -149 -122 -31.6 -28.0 -26.0 -25.5 -25.2 -24.9 -24.8 -24.3 -23.8 -23.4 -22.8 -22.4 -21.9 -21.4 -21.0 -20.7 -20.3 -19.8 -19.5 -19.3 -19.1 -18.7 -18.5 Mag 0.026 0.040 0.050 0.053 0.055 0.057 0.058 0.061 0.064 0.068 0.073 0.076 0.080 0.085 0.089 0.093 0.097 0.102 0.106 0.108 0.111 0.116 0.119 S22 Ang Mag Ang 66 55 54 80 112 132 146 178 -149 -117 -85 -54 -22 9 39 69 100 130 159 -172 -142 -112 -83 0.84 0.68 0.46 0.40 0.40 0.39 0.40 0.38 0.39 0.41 0.41 0.44 0.47 0.46 0.46 0.48 0.49 0.50 0.52 0.56 0.58 0.60 0.61 -31 -49 -58 -27 24 57 82 137 -169 -109 -51 3 66 125 179 -124 -65 -7 48 105 165 -138 -83 9 AT-38043 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 6.0 V, IC = 50 mA, TC = +25C Freq. S11 S21 S12 GHz Mag Ang dB Mag Ang dB 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.25 3.50 3.75 4.00 4.25 4.50 4.75 5.00 0.78 0.80 0.81 0.81 0.81 0.81 0.81 0.82 0.82 0.82 0.83 0.83 0.83 0.84 0.84 0.85 0.85 0.86 0.87 0.88 0.89 0.89 0.90 -62 -101 -146 -168 177 179 177 172 167 163 159 155 150 146 143 140 138 136 134 132 130 129 128 30.8 28.5 22.4 16.8 13.3 11.7 10.8 8.9 7.3 6.0 4.8 3.7 2.7 1.8 0.9 0 -0.8 -1.6 -2.3 -3.2 -3.9 -4.5 -5.2 34.85 26.47 13.26 6.90 4.60 3.86 3.47 2.80 2.32 1.99 1.75 1.53 1.36 1.23 1.11 1.00 0.91 0.83 0.76 0.70 0.64 0.60 0.55 155 141 134 149 170 -176 -167 -143 -120 -95 -71 -47 -22 3 27 53 79 105 131 157 -176 -149 -123 -31.7 -28.1 -26.1 -25.6 -25.3 -25.0 -24.8 -24.3 -23.9 -23.4 -22.8 -22.4 -22.0 -21.5 -21.1 -20.7 -20.3 -19.9 -19.6 -19.4 -19.1 -18.8 -18.5 Mag 0.026 0.039 0.05 0.053 0.055 0.056 0.057 0.061 0.064 0.067 0.072 0.076 0.08 0.084 0.088 0.092 0.097 0.101 0.105 0.108 0.111 0.115 0.119 S22 Ang Mag Ang 66 55 55 81 112 132 146 178 -149 -116 -85 -54 -22 9 39 70 100 130 159 -172 -141 -112 -83 0.84 0.68 0.45 0.39 0.40 0.38 0.39 0.37 0.39 0.40 0.40 0.43 0.46 0.45 0.45 0.48 0.49 0.49 0.52 0.55 0.58 0.59 0.61 -30 -48 -57 -26 25 57 83 138 -168 -108 -50 4 66 125 180 -123 -64 -6 48 106 165 -137 -83 10 AT-38043 Typical Performance, TC = 25C 30 35 35 25 30 30 20 10 5 Gain (dB) 15 MAG |S21|2 25 MSG 15 MAG 10 5 |S21|2 5 0 -5 -5 -5 3.00 4.00 -10 0.05 0.25 0.75 1.00 5.00 3.00 4.00 5.00 FREQUENCY (GHz) FREQUENCY (GHz) 35 35 30 30 25 25 MSG 20 Gain (dB) 20 15 MAG 10 |S21 |2 15 5 0 0 -5 -5 -10 0.05 0.25 0.75 1.00 2.00 3.00 4.00 5.00 FREQUENCY (GHz) Figure 11. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency VCE = 4.8 V, IC = 50 mA. MSG MAG 10 |S21|2 -10 0.05 0.25 0.75 1.00 2.00 3.00 |S21|2 -10 0.05 0.25 0.75 1.00 2.00 3.00 4.00 5.00 FREQUENCY (GHz) Figure 9. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency VCE = 3.0 V, IC = 50 mA. Figure 8. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency VCE = 1.2 V, IC = 50 mA. 5 2.00 MAG 10 0 2.00 MSG 15 0 -10 0.05 0.25 0.75 1.00 Gain (dB) 20 Gain (dB) MSG 20 Gain (dB) 25 4.00 5.00 FREQUENCY (GHz) Figure 12. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency VCE = 6.0 V, IC = 50 mA. Figure 10. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency VCE = 3.6 V, IC = 50 mA. 11 Test Circuit A: Test Circuit Board Layout @ 900 MHz VBB VBB VCC C3 VCC C5 R2 C6 C7 R1 4/97 T1 C8 C2 38.1 (1.5) C9 C4 C1 INPUT C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 T1 100.0 pF 100.0 pF 100.0 nF 10.0 pF 100.0 nF 1.5 F 10.0 F 100.0 pF 3.6 pF 100.0 pF 10.0 620.0 MBT 2222A C10 B-MFG0142 REV A PA4 DEMO OUTPUT 76.2 (3.0) Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) CW Test VCE = 4.8 V ICQ = 15 mA Freq. = 900 MHz NOTE: Dimensions are shown in millimeters (inches). Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz CW Test VCE = 4.8 V ICQ = 15 mA Freq. = 900 MHz VBB 10 620 B DC C E Transistor VCC 100 nF 100 pF 100 pF 80 /4 @ 900 MHz 100 nF 100 pF /4 @ 900 MHz 100 pF RF OUT 50 = 27.74 (1.092) 10 pF = 5.89 (.232) 10 F 80 50 RF IN 1.5 F 3.6 pF 12 Test Circuit B: Test Circuit Board Layout @ 1900 MHz VBB VBB VCC C2 VCC C7 R2 C8 C9 R1 4/97 T1 38.1 (1.5) C6 C3 C5 C4 C1 INPUT C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 T1 100.0 pF 100.0 nF 100.0 pF 3.6 pF 1.8 pF 100 pF 100 nF 1.5 F 10 F 100.0 pF 10.0 620.0 MBT 2222A C10 B-MFG0142 REV A PA4 DEMO OUTPUT 76.2 (3.0) Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) CW Test VCE = 3.0 V ICQ = 15 mA Freq. = 1900 MHz NOTE: Dimensions are shown in millimeters (inches). Test Circuit B: Test Circuit Schematic Diagram @ 1900 MHz CW Test VCE = 3.0 V ICQ = 15 mA Freq. = 1900 MHz VBB 10 620 B DC C E Transistor VCC 100 nF 100 pF 100 pF 80 /4 @ 1900 MHz 100 nF /4 @ 1900 MHz 100 pF RF OUT 50 = 0.299 (7.590) RF IN 3.6 pF = 0.020 (0.510) 10 F 80 50 100 pF 1.5 F 1.8 pF 13 Part Number Ordering Information Part Number Devices per Reel Container AT-38043-TR1 3000 7" Reel AT-38043-TR2 AT-38043-BLK 10,000 100 13" Reel Tape Package Dimensions SOT-343 (SC-70) Plastic Package 1.30 (0.051) BSC 1.30 (.051) REF 2.60 (.102) E 1.30 (.051) E1 0.85 (.033) 0.55 (.021) TYP 1.15 (.045) BSC e 1.15 (.045) REF D h A b TYP A1 L DIMENSIONS SYMBOL A A1 b C D E e h E1 L MAX. MIN. 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0 (0) 0.35 (0.014) 0.25 (0.010) 0.20 (0.008) 0.10 (0.004) 2.10 (0.083) 1.90 (0.075) 2.20 (0.087) 2.00 (0.079) 0.65 (0.025) 0.55 (0.022) 0.450 TYP (0.018) 1.35 (0.053) 1.15 (0.045) 0.35 (0.014) 0.10 (0.004) 10 0 DIMENSIONS ARE IN MILLIMETERS (INCHES) C TYP 14 Device Orientation REEL END VIEW TOP VIEW 4 mm 8 mm CARRIER TAPE 38 38 38 38 USER FEED DIRECTION COVER TAPE Tape Dimensions For Outline 4T P P2 D P0 E F W D1 t1 (CARRIER TAPE THICKNESS) K0 8 MAX. A0 DESCRIPTION 5 MAX. B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.55 0.05 4.00 0.10 1.75 0.10 0.061 0.002 0.157 0.004 0.069 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 0.30 0.255 0.013 0.315 0.012 0.010 0.0005 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 0.05 0.138 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 0.05 0.079 0.002 www.semiconductor.agilent.com Data subject to change. Copyright (c) 1999 Agilent Technologies 5966-1275E (11/99)