NPT1004
Page 1 NDS-010 Rev. 4, April 2013
NPT1004
FEATURES
• Optimized for pulsed, WiMAX, W-CDMA, LTE,
and other light thermal load applications from
DC to 4.0GHz
• 2500MHz performance
• 45W P3dB CW power
• 13.5 dB small signal gain
•55%efciencyatP3dB
• 100% RF tested
• Low cost, surface mount SOIC package
•Highreliabilitygoldmetallizationprocess
• Lead-free and RoHS compliant
• Subject to EAR99 Export Control
DC - 4000MHz
45 Watt, 28 Volt
GaN HEMT
RF Specications (2-Tone): VDS = 28V, IDQ=400mA,Frequency=2500MHz,ToneSpacing=1MHz,TC = 25°C,
Measured in Nitronex Test Fixture
Symbol Parameter Min Typ Max Units
P3dB Average Output Power at 3dB Compression 35 45 - W
P1dB Average Output Power at 1dB Compression - 28 - W
GSS Small Signal Gain 12.5 13.5 -dB
hDrainEfciencyat3dBGainCompression 50 55 - %
Gallium Nitride 28V, 45W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Typical OFDM Performance (2500-2700MHz): VDS = 28V, IDQ = 350mA, POUT, AVG = 37dBm, single carrier OFDM
waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probabil-
ityonCCDF.TC=25°C.MeasuredinLoadPullSystem(RefertoTable2andFigure1)
Symbol Parameter Typ Units
EVM Error Vector Magnitude 2.0 %
GPPower Gain 13.0 dB
hDrainEfciency 27 %
Typical OFDM Performance (3300-3500MHz): VDS = 28V, IDQ = 350mA, POUT, AVG = 36.5dBm, single carrier OFDM
waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01%
probabilityonCCDF.TC=25°C.MeasuredinLoadPullSystem(RefertoTable2andFigure1)
Symbol Parameter Typ Units
EVM Error Vector Magnitude 2.0 %
GPPower Gain 10.5 dB
hDrainEfciency 25 %
NPT1004
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NPT1004
DC Specications: TC=25°C
Symbol Parameter Min Typ Max Units
Off Characteristics
VBDS
Drain-Source Breakdown Voltage
(VGS = -8V, ID =16mA) 100 - - V
IDLK
Drain-Source Leakage Current
(VGS = -8V, VDS =60V) - 2 10 mA
On Characteristics
VT
Gate Threshold Voltage
(VDS = 28V, ID =16mA) -2.3 -1.8 -1.3 V
VGSQ
Gate Quiescent Voltage
(VDS = 28V, ID =350mA) -2.0 -1.5 -1.0 V
RON
On Resistance
(VGS = 2V, ID =120mA) -0.25 0.30 W
ID
Drain Current
(VDS = 7V pulsed, 300ms pulse width,
0.2%dutycycle,VGS =2V)
7.5 9.5 - A
Absolute Maximum Ratings: Not simultaneous, TC=25°C unless otherwise noted
Symbol Parameter Max Units
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage -10 to 3 V
PTTotalDevicePowerDissipation(Deratedabove25°C) 40 W
qJC ThermalResistance(Junction-to-Case) 4.3 °C/W
TSTG Storage Temperature Range -65 to 150 °C
TJOperating Junction Temperature 200 °C
HBM HumanBodyModelESDRating(perJESD22-A114) 1B(>500V)
MM MachineModelESDRating(perJESD22-A113) M1(>50V)
MSL MoistureSensitivityLevel(perIPC/JEDECJ-STD-020):Ratingof3at260°CPackagePeakTemperature
NPT1004
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NPT1004
ZS is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
Table 1:OptimumSourceandLoadImpedancesforCWGain,DrainEfciency,andOutputPowerPerformance
Frequency
(MHz) ZS (W)ZL (W)PSAT (W) GSS (dB) Drain Efciency
@ PSAT (%)
900 2.0 + j2.7 6.0 + j3.3 45 22.5 72
1500 1.6 - j0.8 4.5 + j0.5 45 18.5 70
2500 2.0 - j3.2 3.5 - j5.0 45 14.0 65
3500 3.2 - j6.5 2.9 - j8.0 35 12.0 60
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=350mA, TA=25°C unless otherwise noted
Table 2:OptimumSourceandLoadImpedancesforWiMAXGain,DrainEfciency,OutputPower,and
LinearityPerformance
Frequency
(MHz) ZS (W)ZL (W)POUT (W) Gain (dB) Drain Efciency
(%)
250012.1 - j7.6 3.1 - j3.9 5 14.0 27
260012.3 - j7.7 3.3 - j4.4 5 13.0 27
270012.3 - j9.0 3.4 - j4.7 5 13.0 27
330023.3 - j11.8 3.7 - j7.2 6.3 11.5 30
350023.5 - j13.5 3.5 - j10.0 4.5 10.5 25
380024.5 - j16.2 3.7 - j11.2 3.2 8.0 17
Note1:SinglecarrierOFDMwaveform64-QAM3/4,8burst,continuousframedata,10MHzchannelbandwidth.
Peak/Avg=10.3dB@0.01%probabilityonCCDF,2%EVM.
Note2:SinglecarrierOFDMwaveform64-QAM3/4,8burst,20msframe,15msframedata,3.5MHzchannelbandwidth.
Peak/Avg=10.3dB@0.01%probabilityonCCDF,2%EVM.
Figure 1 - Optimal Impedances for CW and OFDM Performance
(a)CWImpedances (b)OFDMImpedances
NPT1004
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NPT1004
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=350mA, TA=25°C unless otherwise noted.
Figure 2 - TypicalCWPerformance,
Frequency=900to3500MHz,IDQ=400mA
Figure 3 - OFDM Performance Tuned for
POUTat2%EVMinLoad-PullSystem
Figure 4 - OFDM Performance Tuned for
POUTat1.5%EVMinLoad-PullSystem
Figure 6 - QuiescientGateVoltage(VGSQ)Required
to Reach IDQ as a Function of Case Temperature
Figure 5 - OFDM Performance Tuned for
POUTat2%EVMinLoad-PullSystem
Figure 7 - MTTF of NRF1 devices as a
function of junction temperature
NPT1004
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NPT1004
D Package Dimensions and Pinout
1 2 3 4
8 6 57
9
Chamfer
1. NC
2. Gate
3. Gate
4. NC
7. Drain
6. Drain
5. NC
8. NC
9. Source Pad
(Bottom)
EBD
C
A
f
(6X)
F
(8X)
G1
SEATING
PLANE
G
m
SEATING PLANE
L
H
A/2
D/2
.150
Solder Paste
.080" X .120"
(Typ)
Solder Paste
.020" X .040"
(8X Typ)
.100
.105
.176.145.140
Heat Sink
Pedestal
PWB Cutout
R.016 (4X Typ)
.055
.180
.030
PWB Pad
(8X Typ)
Solder Mask
.005" Relief
(Typ)
Mounting Footprints
Ordering Information
Part Number Order Multiple Description
NPT1004DT 97 Tube;NPT1004inD(PSOP2)Package
NPT1004DR 1500 TapeandReel;NPT1004inD(PSOP2)Package
Inches Millimeters
Dim Min Max Min Max
A0.189 0.19 6 4.80 4.98
B0.150 0.157 3.81 3.99
C0.107 0.12 3 2.72 3.12
D0.071 0.870 1.80 2.21
E0.230 0.244 5.84 6.22
f 0.50 BSC 1.270 BSC
F0.0138 0.0192 0.35 0.49
G0.055 0.065 1.40 1.65
G1 0.000 0.004 0.00 0.10
H0.0075 0.0098 0.19 0.25
L0.016 0.035 0.40 0.89
m 0° 8° 0° 8°
1. Gate
2. Gate
3. Gate
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
9. Source Pad
(Bottom)
1:TondaNitronexcontactinyourarea,visitourwebsiteathttp://www.nitronex.com
NPT1004
Page 6 NDS-010 Rev. 4, April 2013
NPT1004
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100(telephone)
+1.919.807.9200(fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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