© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 6
1Publication Order Number:
TIP35/D
TIP35A, TIP35B, TIP35C
(NPN); TIP36A, TIP36B,
TIP36C (PNP)
Complementary Silicon
High-Power Transistors
Designed for general−purpose power amplifier and switching
applications.
Features
•25 A Collector Current
•Low Leakage Current −
ICEO = 1.0 mA @ 30 and 60 V
•Excellent DC Gain −
hFE = 40 Typ @ 15 A
•High Current Gain Bandwidth Product −
⎪hfe⎪= 3.0 min @ IC
= 1.0 A, f = 1.0 MHz
•These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol
TIP35A
TIP36A
TIP35B
TIP36B
TIP35C
TIP36C Unit
Collector − Emitter Voltage VCEO 60 80 100 Vdc
Collector − Base Voltage VCB 60 80 100 Vdc
Emitter − Base Voltage VEB 5.0 Vdc
Collector Current
− Continuous
− Peak (Note 1)
IC25
40
Adc
Base Current − Continuous IB5.0 Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD125
W
W/_C
Operating and Storage
Junction Temperature Range
TJ, Tstg −65 to +150 _C
Unclamped Inductive Load ESB 90 mJ
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
RqJC 1.0 °C/W
Junction−To −Free−Air
Thermal Resistance
RqJA 35.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
25 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−100 VOLTS, 125 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
SOT−93 (TO−218)
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
2
MARKING DIAGRAMS
AYWWG
TIP3xx
TIP3xx
AYWWG
1 BASE
2 COLLECTOR
3 EMITTER
TIP3xx = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
1 BASE
2 COLLECTOR
3 EMITTER
TO−247
TO−218
ORDERING INFORMATION
Device Package Shipping
TIP35AG SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP35BG SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP35CG SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP36AG SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP36BG SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP36CG SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP35AG TO−247
(Pb−Free)
30 Units / Rail
TIP35BG TO−247
(Pb−Free)
30 Units / Rail
TIP35CG TO−247
(Pb−Free)
30 Units / Rail
TIP36AG TO−247
(Pb−Free)
30 Units / Rail
TIP36BG TO−247
(Pb−Free)
30 Units / Rail
TIP36CG TO−247
(Pb−Free)
30 Units / Rail
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
3
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mA, IB = 0) TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
60
80
100
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Cutoff Current
(VCE = 30 V, IB = 0) TIP35A, TIP36A
(VCE = 60 V, IB = 0) TIP35B, TIP35C, TIP36B, TIP36C
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEO
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1.0
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ICES
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
0.7
ÎÎÎ
ÎÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Cutoff Current
(VEB = 5.0 V, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 1.5 A, VCE = 4.0 V)
(IC = 15 A, VCE = 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
ÎÎÎ
ÎÎÎ
ÎÎÎ
25
15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
75
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 15 A, IB = 1.5 A)
(IC = 25 A, IB = 5.0 A)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1.8
4.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage
(IC = 15 A, VCE = 4.0 V)
(IC = 25 A, VCE = 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.0
4.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain
(IC = 1.0 A, VCE = 10 V, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hfe
ÎÎÎ
ÎÎÎ
ÎÎÎ
25
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain — Bandwidth Product
(IC = 1.0 A, VCE = 10 V, f = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
fT
ÎÎÎ
ÎÎÎ
3.0
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
MHz
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
4
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
0 125
0
25
175
75
100
75 100
50
125
25 150
PD, POWER DISSIPATION (WATTS)
50
Figure 2. Switching Time Equivalent Test Circuits
0.3
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (AMPERES)
0.02
1.0 30
0.07
1.0
10
TJ = 25°C
IC/IB = 10
VCC = 30 V
VBE(off) = 2 V
t, TIME (s)μ
0.5
0.3
0.1
0.05
0.5 3.0 5.0
0.03
0.7
2.0
0.7 7.0
tr
0.2
2.0 20
td
(PNP)
(NPN)
TURN−ON TIME TURN−OFF TIME
+2.0 V
0
tr ≤
20 ns
-11.0 V
10 TO 100 mS
3.0RL
-30 VVCC
DUTY CYCLE ≈ 2.0%
10
RB
TO SCOPE
tr ≤ 20 ns
VBB +4.0 V
FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
0
+9.0 V
-11.0 V
10 to 100 ms
tr ≤ 20 ns
DUTY CYCLE ≈ 2.0%
3.0RL
-30 VVCC
10
RB
TO SCOPE
tr ≤ 20 ns
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
5
0.5 1.0 2.0 7.00.3 3.0 5.00.7
IC, COLLECTOR CURRENT (AMPERES)
Figure 4. Turn−Off Time
10
t, TIME (s)μ
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10 20 30
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
ts
tf
(PNP)
(NPN)
ts
tf
IC, COLLECTOR CURRENT (AMPS)
hFE, DC CURRENT GAIN
Figure 5. DC Current Gain
200
500
0.2 0.5 2.0 1000.1
100
50
20
10
1.0
VCE = 4.0 V
TJ = 25°C
5.0
10 205.0 50
PNP
NPN
1000
2.0
1.0
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC w 25_C. Second breakdown limitations do
not derate the same as thermal limitations.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives RBSOA characteristics.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
7.0 201.0 50 100
0.2
0
0.5
SECONDARY BREAKDOWN
THERMAL LIMIT
BONDING WIRE LIMIT
1.0ms
dc
300ms
2.0
1.0
100
30
IC, COLLECTOR CURRENT (AMPS)
10ms
Figure 6. Maximum Rated Forward Bias
Safe Operating Area
50
20
10
5.0
0.3
2.0 3.0 5.0 10 30 70
TC = 25°C
TIP35A, 36A
TIP35B, 36B
TIP35C, 36C
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40 600 80 100
5.0
0
15
20
40
30
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Maximum Rated Forward Bias
Safe Operating Area
25
10
10 20 30 50 70 90
TJ ≤ 100°C
TIP35A
TIP36A
TIP35B
TIP36B
TIP35C
TIP36C
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
6
Figure 8. Inductive Load Switching
TEST CIRCUIT
VOLTAGE AND CURRENT WAVEFORMS
NOTES:
A. L1 and L2 are 10 mH, 0.11 W, Chicago Standard Transformer Corporation C−2688, or equivalent.
B. Input pulse width is increased until ICM = −3.0 A.
C. For NPN, reverse all polarities.
INPUT
50
MJE180 RBB1
20
RBB2 = 100
VBB2 = 0
VBB1 = 10 V
VCE MONITOR
L1
(SEE NOTE A)
L2
(SEE NOTE A)
TUT
VCC = 10 V
IC MONITOR
+
-
RS = 0.1 W
50
+
-
5.0 V
0
-3.0 A
-10 V
tw = 6.0 ms
(SEE NOTE B)
INPUT
VOLTAGE
COLLECTOR
CURRENT
COLLECTOR
VOLTAGE
V(BR)CER
0
0
100 ms
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
7
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
A
D
V
G
K
SL
U
BQ
123
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
C
J
H
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A--- 20.35 --- 0.801
B14.70 15.20 0.579 0.598
C4.70 4.90 0.185 0.193
D1.10 1.30 0.043 0.051
E1.17 1.37 0.046 0.054
G5.40 5.55 0.213 0.219
H2.00 3.00 0.079 0.118
J0.50 0.78 0.020 0.031
K31.00 REF 1.220 REF
L--- 16.20 --- 0.638
Q4.00 4.10 0.158 0.161
S17.80 18.20 0.701 0.717
U4.00 REF 0.157 REF
V1.75 REF 0.069
TO−247
CASE 340L−02
ISSUE F
N
P
A
K
W
F
D
G
U
E
0.25 (0.010) MYQS
J
H
C
4
123
−T−
−B−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2 PL
3 PL
0.63 (0.025) MTBM
−Q−
LDIM MIN MAX MIN MAX
INCHESMILLIMETERS
A20.32 21.08 0.800 8.30
B15.75 16.26 0.620 0.640
C4.70 5.30 0.185 0.209
D1.00 1.40 0.040 0.055
E1.90 2.60 0.075 0.102
F1.65 2.13 0.065 0.084
G5.45 BSC 0.215 BSC
H1.50 2.49 0.059 0.098
J0.40 0.80 0.016 0.031
K19.81 20.83 0.780 0.820
L5.40 6.20 0.212 0.244
N4.32 5.49 0.170 0.216
P--- 4.50 --- 0.177
Q3.55 3.65 0.140 0.144
U6.15 BSC 0.242 BSC
W2.87 3.12 0.113 0.123
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
8
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