DATA SHEET N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 50 watts of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.1 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 1.5 to 2.1 GHz. The device employs 0.9 m Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES * Push-pull type N-channel GaAs MESFET * High Output Power: 50 W typ. * High Linear Gain: 10.5 dB typ. * High Drain Efficiency: 52 % typ. @VDS = 10 V, IDset = 2 A, f = 1.96 GHz ORDERING INFORMATION (PLAN) PART NUMBER NES1821P-50 PACKAGE SUPPLYING FORM T-86 Remarks To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NES1821P-50) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Symbol Ratings Unit VDS 15 V Gate to Source Voltage VGSO -7 V Gate to Drain Voltage VGDO -18 V Drain Current ID 30 A Gate Current IG 200 *1 mA Total Power Dissipation PT 110 W Channel Temperature Tch 175 C Storage Temperature Tstg -65 to +175 C *1. TC = 25C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Document No. P13273EJ2V0DS00 (2nd edition) Date Published July 1998 N CP(K) Printed in Japan (c) 1998 NES1821P-50 RECOMMENDED OPERATING LIMITS CHARACTERISTICS TYP. MAX. UNIT 10.0 10.0 V Gcomp 3.0 dB Channel Temperature Tch +150 C Set Drain Current IDset 4.0 A 10 MAX. UNIT Drain to Source Voltage Gain Compression *1 Gate Resistance SYMBOL TEST CONDITIONS MIN. VDS VDS = 10 V, RF OFF Rg *1 Rg is the series resistance between the gate supply and the FET gate. ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS TEST CONDITIONS Saturated Drain Current IDSS VDS = 2.5 V, VGS = 0 V Pinch-off Voltage Vp VDS = 2.5 V, ID = 130 mA Thermal Resistance Rth Channel to Case Output Power Pout Drain Current ID Drain Efficiency D f = 1.96 GHz, VDS = 10 V Pin = +39.5 dBm, Rg = 10 IDset = 2.0 A Total (RF OFF) *2 *1 Linear Gain *1 Pin = +30 dBm *2 IDset = 1.0 A each drain 2 SYMBOL GL MIN. -4.0 TYP. 30.0 A -2.6 V 1.0 46.0 47.0 10 9.5 1.5 C/W dBm 13 A 52 % 10.5 dB NES1821P-50 TYPICAL PERFORMANCE CURVES (TA = 25 C) OUTPUT POWER AND DRAIN EFFICIENCY vs INPUT POWER (1 tone) INTERMODULATION DISTORTION vs TOTAL OUTPUT POWER (2 tone signals) 50 -10 -20 60 40 D 30 20 : Pout : D 20 10 20 30 40 IM3 [dBc] 40 Drain Efficiency [%] Output Power [dBm] Pout -30 set IDS -40 : 3A : 2A : 1A -50 : 0.5 A 0 -60 20 25 Input Power [dBm] 30 35 40 45 50 Total Output Power [dBm] * Freq = 1.500 GHz (1tone) * VDS = 10 V, IDSset = 1 A * Freq = 1.500, 1.501 GHz (2tones) * VDS = 10 V, IDSset = 0.5, 1, 2, 3 A OUTPUT POWER AND DRAIN EFFICIENCY vs INPUT POWER (1 tone) INTERMODULATION DISTORTION vs TOTAL OUTPUT POWER (2 tone signals) 50 -10 60 40 D 30 20 : Pout : D 20 10 20 30 Input Power [dBm] * Freq = 1.960 GHz (1tone) * VDS = 10 V, IDSset = 1 A 40 0 IM3 [dBc] 40 Drain Efficiency [%] Output Power [dBm] -20 Pout -30 -40 set IDS : 3A : 2A : 1A -50 : 0.5 A -60 20 25 30 35 40 45 50 Total Output Power [dBm] * Freq = 1.960, 1.961 GHz (2tones) * VDS = 10 V, IDSset = 0.5, 1, 2, 3 A 3 NES1821P-50 TYPICAL PERFORMANCE CURVES (TA = 25 C) OUTPUT POWER AND DRAIN EFFICIENCY vs INPUT POWER (1 tone) INTERMODULATION DISTORTION vs TOTAL OUTPUT POWER (2 tone signals) 50 -10 60 40 D 30 20 : Pout : D 20 10 20 30 40 IM3 [dBc] Pout 40 Drain Efficiency [%] Output Power [dBm] -20 -30 -40 set IDS : 3A : 2A : 1A -50 : 0.5 A 0 -60 20 25 Input Power [dBm] 30 35 40 45 Total Output Power [dBm] * Freq = 2.140, 2.141 GHz (2tones) * VDS = 10 V, IDSset = 0.5, 1, 2, 3 A * Freq = 2.140 GHz (1tone) * VDS = 10 V, IDSset = 1 A Marker S-Parameters on one drain side 1: 1.50 GHz VDS = 10 V, IDSset = 1 A 2: 1.76 GHz 3: 1.96 GHz 4: 2.16 GHz S11 S22 1 1 4 3 2 2 3 4 Unit: 1 Full-scall Start 1 GHz 4 Stop 3 GHz 50 NES1821P-50 S-Parameters on one drain side VDS = 10 V, IDS = 1 A Freq. (MHz) 1600 1620 1640 1660 1680 1700 1720 1740 1760 1780 1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080 2100 2120 2140 2160 2180 2200 2220 2240 2260 2280 2300 2320 2340 2360 2380 2400 2420 2440 2460 2480 S11 Mag. Ang. (deg) 0.837 0.828 0.816 0.803 0.792 0.777 0.758 0.740 0.720 0.698 0.675 0.656 0.635 0.610 0.591 0.576 0.562 0.557 0.563 0.571 0.589 0.610 0.632 0.661 0.683 0.712 0.732 0.754 0.775 0.791 0.807 0.822 0.833 0.847 0.854 0.862 0.869 0.877 0.882 0.890 0.892 0.895 0.902 0.901 0.902 137.7 137.1 135.6 134.7 133.7 132.6 132.1 131.5 130.6 130.5 129.9 130.4 131.0 131.9 133.6 135.6 138.3 141.2 143.9 146.3 148.8 150.4 152.1 152.6 152.8 152.7 152.5 152.0 151.7 151.1 150.3 149.4 148.7 147.9 147.3 146.3 145.9 144.9 144.6 143.8 143.5 142.8 142.1 141.5 140.9 S21 Mag. Ang. (deg) 0.941 0.967 0.993 1.046 1.090 1.072 1.061 1.128 1.196 1.179 1.144 1.233 1.315 1.277 1.209 1.240 1.316 1.308 1.250 1.206 1.193 1.195 1.174 1.096 1.003 1.001 1.022 0.937 0.822 0.797 0.837 0.785 0.679 0.638 0.660 0.637 0.566 0.520 0.519 0.514 0.477 0.437 0.410 0.411 0.410 45.1 43.2 41.5 39.2 34.9 30.3 29.3 28.3 22.9 17.2 16.3 15.3 8.4 1.1 -1.9 -3.0 -8.3 -15.6 -21.1 -24.5 -27.8 -32.2 -38.8 -44.9 -46.9 -47.6 -53.6 -61.1 -63.0 -61.3 -65.3 -73.5 -76.3 -73.1 -74.6 -81.5 -85.1 -83.6 -83.0 -86.8 -90.4 -91.9 -90.6 -90.0 -93.8 S12 Mag. Ang. (deg) 0.023 0.023 0.024 0.024 0.024 0.025 0.024 0.023 0.023 0.024 0.023 0.022 0.021 0.021 0.020 0.019 0.017 0.016 0.015 0.014 0.012 0.010 0.009 0.009 0.008 0.008 0.008 0.009 0.010 0.011 0.011 0.012 0.013 0.015 0.015 0.015 0.016 0.018 0.019 0.019 0.018 0.019 0.020 0.022 0.021 35.5 33.1 29.6 27.7 26.4 22.5 17.5 15.3 12.9 8.5 1.4 -2.5 -6.0 -9.8 -18.9 -26.2 -31.8 -38.6 -47.1 -55.9 -67.7 -79.4 -92.2 -108.5 -123.8 -143.8 -155.4 -168.9 -177.2 168.7 159.0 154.5 153.5 145.4 137.4 135.9 135.1 131.4 124.7 121.8 122.6 121.6 120.1 115.6 111.8 S22 Mag. Ang. (deg) 0.839 0.837 0.837 0.836 0.835 0.839 0.836 0.840 0.838 0.843 0.850 0.853 0.858 0.858 0.869 0.880 0.887 0.896 0.904 0.915 0.924 0.929 0.934 0.941 0.945 0.943 0.945 0.948 0.939 0.945 0.942 0.941 0.938 0.938 0.934 0.930 0.932 0.925 0.921 0.918 0.917 0.916 0.917 0.910 0.909 162.3 161.9 161.5 161.6 161.3 161.3 161.3 161.0 160.8 160.6 160.1 160.1 160.1 160.0 159.5 159.7 158.9 158.5 158.0 157.2 156.4 155.6 155.1 154.1 153.3 152.6 151.9 151.2 150.5 149.8 149.3 148.4 148.3 147.7 147.3 147.0 146.4 146.1 145.6 145.5 145.1 145.0 144.6 144.2 144.2 5 Input Circuit Output Circuit 4.0 8.26 8.0 3.3 4.7 8.26 4.0 28.4 50 line 15 .6 7.6 12.6 21.8 11.5 1.8 28.4 1.8 /4 50 50 line /4 50 20 pF 30 pF Coaxial Cable Coaxial Cable 2 pF To Gate Bias Circuit : Soldering MATCHING CIRCUIT DRAWING [Unit: mm] f = 1.96 GHz 6 To Drain Bias Circuit To Gate Bias Circuit To Drain Bias Circuit OUT DUT DUT IN /4 Coaxial Cable NES1821P-50 /4 Coaxial Cable NES1821P-50 45 G2 S S D1 G1, G2: Gate D1, D2: Drain S: Source 19.4 0.4 G1 11.4 0.3 R1.2 0.3 5.7 0.3 2.4 0.3 PACKAGE DIMENSIONS (UNIT: mm) D2 1.4 0.2 14.5 0.3 4.7 MAX. 7.8 0.2 24.5 0.3 1.8 0.2 0.1 2.4 0.2 20.9 0.3 7 NES1821P-50 RECOMMENDED MOUNTING CONDITION for CORRECT USE (1) Fix to a heatsink or mount surface completely with screw at the four holes of the flange. (2) Recommended torque strength of the screw is 3 kgF typical using M2.3 type screw. (3) Recommended flatness of the mount surface is less than 10 m. (roughness of surface is ) RECOMMENDED SOLDERING CONDITION This product should be soldered in the following recommended condition. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. Soldering method Pin part heating Soldering conditions Recommended condition symbol Pin area temperature: less than 260C Hour: within 5 sec./pin. For details of recommended soldering conditions, please contact your local NEC sales office. 8 NES1821P-50 [MEMO] 9 NES1821P-50 [MEMO] 10 NES1821P-50 [MEMO] 11 NES1821P-50 Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5