The information in this document is subject to change without notice.
N-CHANNEL GaAs MES FET
NES1821P-50
50 W L-BAND PUSH-PULL POWER GaAs MESFET
1998©
Document No. P13273EJ2V0DS00 (2nd edition)
Date Published July 1998 N CP(K)
Printed in Japan
DATA SHEET
DESCRIPTION
The NES1821P-50 is a 50 W push-pull type GaAs MESFET designed for high power transmitter applications for
PCS, DCS and PHS base station systems. It is capable of delivering 50 watts of output power (CW) with high linear
gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.1 GHz, however with different matching, 60
MHz or less of instantaneous bandwidth can be achieved anywhere from 1.5 to 2.1 GHz. The device employs 0.9
µ
m Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance,
thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MESFET
• High Output Power: 50 W typ.
• High Linear Gain: 10.5 dB typ.
• High Drain Efficiency: 52 % typ. @VDS = 10 V, IDset = 2 A, f = 1.96 GHz
ORDERING INFORMATION (PLAN)
PART NUMBER PACKAGE SUPPLYING FORM
NES1821P-50 T-86
Remarks To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NES1821P-50)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter Symbol Ratings Unit
Drain to Sourc e Voltage VDS 15 V
Gate to Source Voltage VGSO –7 V
Gate to Drain V ol tage VGDO –18 V
Drain Current ID30 A
Gate Current IG200 mA
Total P ower Dissipation PT110*1 W
Channel Temperature Tch 175 °C
Storage Temperat ure Tstg –65 to +175 °C
*1. TC = 25°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
2
NES1821P-50
RECOMMENDED OPERATING LIMITS
CHARACTERIS T ICS SYMBOL T EST CONDITIONS MIN. TYP. MAX. UNIT
Drain to Sourc e Voltage VDS 10.0 10.0 V
Gain Compress i on Gcomp 3.0 dB
Channel Temperature Tch +150 °C
Set Drain Current IDset VDS = 10 V, RF OFF 4.0 A
Gate Resistance*1 Rg10 Ω
*1 Rg is the series resistance between the gate supply and the FET gate.
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERIS T ICS SYMBOL T EST CONDITIONS MIN. TYP. MAX. UNIT
Saturated Drai n Current I DSS VDS = 2.5 V, VGS = 0 V 30.0 A
Pinch-of f Volt age VpVDS = 2.5 V, ID = 130 mA –4.0 –2.6 V
Thermal Resistance Rth Channel to Case 1.0 1.5 °C/W
Output Power Pout 46.0 47.0 dBm
Drain Current ID10 13 A
Drain Eff i ciency
η
D52 %
Linear Gain*1 GL
f = 1.96 GHz, VDS = 10 V
Pin = +39.5 dB m , Rg = 10 Ω
IDset = 2.0 A Total (RF OFF)
*2
9.5 10.5 dB
*1 Pin = +30 dBm
*2 IDset = 1.0 A each drain
3
NES1821P-50
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
• Freq = 1.960, 1.961 GHz (2tones)
• VDS = 10 V, IDSset = 0.5, 1, 2, 3 A
Pout
D
η
2010 30 40
20
30
40
50
0
20
40
60
Input Power [dBm]
Output Power [dBm]
Drain Efficiency [%]
OUTPUT POWER AND DRAIN EFFICIENCY
vs INPUT POWER (1 tone)
• Freq = 1.500 GHz (1tone)
• VDS = 10 V, IDSset = 1 A
3020 40
–60
–30
–20
–10
Total Output Power [dBm]
IM3 [dBc]
INTERMODULATION DISTORTION vs
TOTAL OUTPUT POWER (2 tone signals)
• Freq = 1.500, 1.501 GHz (2tones)
• VDS = 10 V, IDSset = 0.5, 1, 2, 3 A
–40
–50
set IDS
: 3 A
: 2 A
: 1 A
: 0.5 A
Pout
D
η
2010 30 40
20
30
40
50
0
20
40
60
Input Power [dBm]
Output Power [dBm]
Drain Efficiency [%]
OUTPUT POWER AND DRAIN EFFICIENCY
vs INPUT POWER (1 tone)
• Freq = 1.960 GHz (1tone)
• VDS = 10 V, IDSset = 1 A
–60
–30
–20
–10
Total Output Power [dBm]
IM3 [dBc]
INTERMODULATION DISTORTION vs
TOTAL OUTPUT POWER (2 tone signals)
–40
–50
set IDS
: 3 A
: 2 A
: 1 A
: 0.5 A
: Pout
D
η
:
: Pout
D
η
:
25 35 45
3020 4025 35 45
50
50
4
NES1821P-50
23
1
4
S11
2
3
1
4
S22
1: 1.50 GHz
2: 1.76 GHz
3: 1.96 GHz
4: 2.16 GHz
Marker
Unit: 1 Full-scall
Start 1 GHz Stop 3 GHz
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
3020 40
–60
–30
–20
–10
Total Output Power [dBm]
IM3 [dBc]
INTERMODULATION DISTORTION vs
TOTAL OUTPUT POWER (2 tone signals)
• Freq = 2.140, 2.141 GHz (2tones)
• VDS = 10 V, IDSset = 0.5, 1, 2, 3 A
–40
–50
set IDS
: 3 A
: 2 A
: 1 A
: 0.5 A
25 35 45
Pout
D
η
2010 30 40
20
30
40
50
0
20
40
60
Input Power [dBm]
Output Power [dBm]
OUTPUT POWER AND DRAIN EFFICIENCY
vs INPUT POWER (1 tone)
• Freq = 2.140 GHz (1tone)
• VDS = 10 V, IDSset = 1 A
: Pout
D
η
:
Drain Efficiency [%]
50
S-Parameters on one drain side
VDS = 10 V, IDSset = 1 A
5
NES1821P-50
S-Parameters on one drain side
VDS = 10 V, IDS = 1 A
S11 S21 S12 S22
Freq. (MHz) Mag. Ang. (deg) Mag. Ang. (deg) Mag. Ang. (deg) Mag. Ang. (deg)
1600 0.837 137.7 0.941 45.1 0.023 35.5 0.839 162.3
1620 0.828 137.1 0.967 43.2 0.023 33.1 0.837 161.9
1640 0.816 135.6 0.993 41.5 0.024 29.6 0.837 161.5
1660 0.803 134.7 1.046 39.2 0.024 27.7 0.836 161.6
1680 0.792 133.7 1.090 34.9 0.024 26.4 0.835 161.3
1700 0.777 132.6 1.072 30.3 0.025 22.5 0.839 161.3
1720 0.758 132.1 1.061 29.3 0.024 17.5 0.836 161.3
1740 0.740 131.5 1.128 28.3 0.023 15.3 0.840 161.0
1760 0.720 130.6 1.196 22.9 0.023 12.9 0.838 160.8
1780 0.698 130.5 1.179 17.2 0.024 8.5 0.843 160.6
1800 0.675 129.9 1.144 16.3 0.023 1.4 0.850 160.1
1820 0.656 130.4 1.233 15.3 0.022 –2.5 0.853 160.1
1840 0.635 131.0 1.315 8.4 0.021 –6.0 0.858 160.1
1860 0.610 131.9 1.277 1.1 0.021 –9.8 0.858 160.0
1880 0.591 133.6 1.209 –1.9 0.020 –18.9 0.869 159.5
1900 0.576 135.6 1.240 –3.0 0.019 –26.2 0.880 159.7
1920 0.562 138.3 1.316 –8.3 0.017 –31.8 0.887 158.9
1940 0.557 141.2 1.308 –15.6 0.016 –38.6 0.896 158.5
1960 0.563 143.9 1.250 –21.1 0.015 –47.1 0.904 158.0
1980 0.571 146.3 1.206 –24.5 0.014 –55.9 0.915 157.2
2000 0.589 148.8 1.193 –27.8 0.012 –67.7 0.924 156.4
2020 0.610 150.4 1.195 –32.2 0.010 –79.4 0.929 155.6
2040 0.632 152.1 1.174 –38.8 0.009 –92.2 0.934 155.1
2060 0.661 152.6 1.096 –44.9 0.009 –108.5 0.941 154.1
2080 0.683 152.8 1.003 –46.9 0.008 –123.8 0.945 153.3
2100 0.712 152.7 1.001 –47.6 0.008 –143.8 0.943 152.6
2120 0.732 152.5 1.022 –53.6 0.008 –155.4 0.945 151.9
2140 0.754 152.0 0.937 –61.1 0.009 –168.9 0.948 151.2
2160 0.775 151.7 0.822 –63.0 0.010 –177.2 0.939 150.5
2180 0.791 151.1 0.797 –61.3 0.011 168.7 0.945 149.8
2200 0.807 150.3 0.837 –65.3 0.011 159.0 0.942 149.3
2220 0.822 149.4 0.785 –73.5 0.012 154.5 0.941 148.4
2240 0.833 148.7 0.679 –76.3 0.013 153.5 0.938 148.3
2260 0.847 147.9 0.638 –73.1 0.015 145.4 0.938 147.7
2280 0.854 147.3 0.660 –74.6 0.015 137.4 0.934 147.3
2300 0.862 146.3 0.637 –81.5 0.015 135.9 0.930 147.0
2320 0.869 145.9 0.566 –85.1 0.016 135.1 0.932 146.4
2340 0.877 144.9 0.520 –83.6 0.018 131.4 0.925 146.1
2360 0.882 144.6 0.519 –83.0 0.019 124.7 0.921 145.6
2380 0.890 143.8 0.514 –86.8 0.019 121.8 0.918 145.5
2400 0.892 143.5 0.477 –90.4 0.018 122.6 0.917 145.1
2420 0.895 142.8 0.437 –91.9 0.019 121.6 0.916 145.0
2440 0.902 142.1 0.410 –90.6 0.020 120.1 0.917 144.6
2460 0.901 141.5 0.411 –90.0 0.022 115.6 0.910 144.2
2480 0.902 140.9 0.410 –93.8 0.021 111.8 0.909 144.2
6
NES1821P-50
MATCHING CIRCUIT DRAWING [Unit: mm]
f = 1.96 GHz
3.3 8.264.7 4.0 28.4
Output Circuit
50 Ω line
λ/4 50 Ω
20 pF
2 pF Coaxial Cable
To Drain Bias Circuit
To Drain Bias Circuit
21.8
12.6
7.6
1.8
8.08.264.028.4
Input Circuit
To Gate Bias Circuit
To Gate Bias Circuit
15 .6
11.5 1.8
30 pF
λ/4 50 Ω
50 Ω line
Coaxial Cable
DUT OUT
λ/4 Coaxial Cable
DUT
IN
λ/4 Coaxial Cable
: Soldering
7
NES1821P-50
PACKAGE DIMENSIONS (UNIT: mm)
1.4 ± 0.2
2.4 ± 0.2
1.8 ± 0.2 4.7 MAX.
19.4 ± 0.4
11.4 ± 0.3
5.7 ± 0.3
2.4 ± 0.3
0.1
14.5 ± 0.3
7.8 ± 0.2
20.9 ± 0.3
24.5 ± 0.3
D2D1
G2G1
SS
45˚
R1.2 ± 0.3
G1, G2: Gate
D1, D2: Drain
S: Source
8
NES1821P-50
RECOMMENDED MOUNTING CONDITION for CORRECT USE
(1) Fix to a heatsink or mount surface completely with screw at the four holes of the flange.
(2) Recommended torque strength of the screw is 3 kgF typical using M2.3 type screw.
(3) Recommended flatness of the mount surface is less than ±10
µ
m. (roughness of surface is )
RECOMMENDED SOLDERING CONDITION
This product should be soldered in the following recommended condition. Other soldering methods and
conditions than the recommended conditions are to be consulted with our sales representatives.
Soldering method Soldering c ondi t i ons Recommended c ondi tion sy mbol
Pin part heat i ng Pin area tem perat ure: less than 260°C
Hour: within 5 sec./pin.
For details of recommended soldering conditions, please contact your local NEC sales office.
9
NES1821P-50
[MEMO]
10
NES1821P-50
[MEMO]
11
NES1821P-50
[MEMO]
NES1821P-50
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
