VNN3NV04P-E VNS3NV04P-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data Features Type RDS(on) Ilim Vclamp VNN3NV04P-E VNS3NV04P-E 120 m 3.5 A 40 V 2 1 2 3 SO-8 SOT-223 Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of the Power MOSFET (analog driving) Compatible with standard Power MOSFET in compliance with the 2002/95/EC European directive Description The VNN3NV04P-E, VNS3NV04P-E, are monolithic devices designed in STMicroelectronics(R) VIPower(R) M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Table 1. Device summary Order codes Package September 2013 This is information on a product in full production. Tube Tape and reel SOT-223 -- VNN3NV04PTR-E SO-8 VNS3NV04P-E VNS3NV04PTR-E Doc ID 15626 Rev. 5 1/22 www.st.com 1 Contents VNN3NV04P-E, VNS3NV04P-E Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.1 4 5 2/22 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.1 SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2 SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.3 SOT-223 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.4 SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Doc ID 15626 Rev. 5 VNN3NV04P-E, VNS3NV04P-E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Doc ID 15626 Rev. 5 3/22 List of figures VNN3NV04P-E, VNS3NV04P-E List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. 4/22 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Thermal impedance for SOT-223 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Static drain-source on resistance vs input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 12 Static drain-source on resistance vs input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 12 Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Static drain-source on resistance vs Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Turn-off drain source voltage slope (part 2/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Switching time resistive load (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Switching time resistive load (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 SOT-223 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 SO-8 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 SOT-223 tape and reel shipment (suffix "TR") . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 SO-8 tape and reel shipment (suffix "TR") . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Doc ID 15626 Rev. 5 VNN3NV04P-E, VNS3NV04P-E 1 Block diagram and pin description Block diagram and pin description Figure 1. Block diagram DRAIN 2 Overvoltage Clamp INPUT 1 Gate Control Linear Current Limiter Over Temperature 3 SOURCE Figure 2. FC01000 Configuration diagram (top view) SO-8 Package(1) SOURCE 1 8 DRAIN SOURCE INPUT DRAIN DRAIN SOURCE 4 5 DRAIN 1. For the pins configuration related to SOT-223 see outlines at page 1. Doc ID 15626 Rev. 5 5/22 Electrical specifications 2 VNN3NV04P-E, VNS3NV04P-E Electrical specifications Figure 3. Current and voltage conventions ID VDS DRAIN IIN RIN INPUT SOURCE VIN 2.1 Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit SOT-223 VDS Drain-source voltage (VIN = 0 V) Internally clamped V VIN Input voltage Internally clamped V IIN Input current +/-20 mA 220 Internally limited A RIN MIN Minimum input series impedance ID Drain current IR Reverse DC output current -5.5 A VESD1 Electrostatic discharge (R = 1.5 K, C = 100 pF) 4000 V VESD2 Electrostatic discharge on output pin only (R = 330 , C = 150 pF) 16500 V Ptot Total dissipation at Tc = 25 C 7 8.3 W Tj Operating junction temperature Internally limited C Tc Case operating temperature Internally limited C -55 to 150 C Tstg 6/22 SO-8 Storage temperature Doc ID 15626 Rev. 5 VNN3NV04P-E, VNS3NV04P-E 2.2 Electrical specifications Thermal data Table 3. Thermal data Value Symbol Parameter Unit SOT-223 Rthj-case Thermal resistance junction-case max Rthj-lead Thermal resistance junction-lead max Rthj-amb Thermal resistance junction-ambient max SO-8 18 C/W 15 (1) 70 C/W (1) 65 C/W 1. When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 mm thick) connected to all DRAIN pins. 2.3 Electrical characteristics -40C < Tj < 150C, unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit VIN = 0 V; ID = 1.5 A 40 45 55 V VCLTH Drain-source clamp threshold VIN = 0 V; ID = 2 mA voltage 36 VINTH Input threshold voltage 0.5 Off VCLAMP IISS Drain-source clamp voltage VDS = VIN; ID = 1 mA Supply current from input pin VDS = 0 V; VIN = 5 V IIN = 1 mA 6 IIN = -1 mA -1.0 V 2.5 V 100 150 A 6.8 8 V -0.3 V VINCL Input-source clamp voltage Zero input voltage drain current (VIN = 0 V) VDS = 13 V; VIN = 0 V; Tj = 25C 30 A IDSS VDS = 25 V; VIN = 0 V 75 A Static drain-source on resistance VIN = 5 V; ID = 1.5 A; Tj = 25C 120 m VIN = 5 V; ID = 1.5 A 240 m On RDS(on) Dynamic (Tj=25 C, unless otherwise specified) gfs (1) Forward transconductance VDD = 13 V; ID = 1.5 A 5.0 S COSS Output capacitance VDS = 13 V; f = 1 MHz; VIN = 0 V 150 pF Switching (Tj = 25C, unless otherwise specified) td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time VDD = 15 V; ID = 1.5 A; Vgen = 5 V; Rgen = RIN MIN = 220 (see Figure 4) Fall time Doc ID 15626 Rev. 5 90 300 ns 250 750 ns 450 1350 ns 250 750 ns 7/22 Electrical specifications Table 4. Electrical characteristics (continued) Symbol td(on) tr td(off) tf (dI/dt)on Qi VNN3NV04P-E, VNS3NV04P-E Parameter Test conditions Min Turn-on delay time Rise time Turn-off delay time VDD = 15 V; ID = 1.5 A; Vgen = 5 V; Rgen = 2.2 K (see Figure 4) Fall time Typ Max Unit 0.45 1.35 s 2.5 7.5 s 3.3 10.0 s 2.0 6.0 s Turn-on current slope VDD = 15 V; ID = 1.5 A; Vgen = 5 V; Rgen = RIN MIN = 220 4.7 A/s Total input charge VDD = 12 V; ID = 1.5 A; VIN = 5 V; Igen = 2.13 mA (see Figure 7) 8.5 nC 0.8 V 107 ns 37 C 0.7 A Source drain diode (Tj=25C, unless otherwise specified) VSD(1) Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 1.5 A; VIN = 0 V ISD = 1.5 A; dI/dt = 12 A/s; VDD = 30 V; L = 200 H (see Figure 5) Protections (-40C < Tj < 150C, unless otherwise specified) Ilim Drain current limit VIN = 5 V; VDS = 13 V tdlim Step response current limit VIN = 5 V; VDS = 13 V Tjsh Over temperature shutdown 150 Tjrs Over temperature reset 135 Igf Fault sink current VIN = 5 V; VDS = 13 V; Tj = Tjsh 10 Eas Single pulse avalanche energy starting Tj = 25C; VDD = 24 V; VIN = 5 V; Rgen = RIN MIN = 220 ; L = 24 mH (see Figure 6 and Figure 8) 100 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 8/22 Doc ID 15626 Rev. 5 3.5 5 7 10 175 A s 200 C C 15 20 mA mJ VNN3NV04P-E, VNS3NV04P-E 3 Protection features Protection features During normal operation, the input pin is electrically connected to the gate of the internal Power MOSFET through a low impedance path. The device then behaves like a standard Power MOSFET and can be used as a switch from DC up to 50 kHz. The only difference from the user's standpoint is that a small DC current IISS (typ. 100 A) flows into the input pin in order to supply the internal circuitry. The device integrates: Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. Linear current limiter circuit: limits the drain current ID to Ilim whatever the input pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the over temperature threshold Tjsh. Overtemperature and short circuit protection: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150C to 190C, a typical value being 170C. The device is automatically restarted when the chip temperature falls of about 15C below shutdown temperature. Status feedback: in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the input pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the input pin driver is not able to supply the current Igf, the input pin will fall to 0 V. This will not however affect the device operation: no requirement is put on the current capability of the input pin driver except to be able to supply the normal operation drive current IISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL logic circuit. Doc ID 15626 Rev. 5 9/22 Protection features Figure 4. VNN3NV04P-E, VNS3NV04P-E Switching time test circuit for resistive load VD Rgen ID Vgen 90% tr tf 10% t td(on) Vgen td(off) t Figure 5. Test circuit for diode recovery times A A D I FAST DIODE OMNIFET S L=100uH B B 220 D Rgen VDD I Vgen OMNIFET S 8.5 10/22 Doc ID 15626 Rev. 5 VNN3NV04P-E, VNS3NV04P-E Protection features Figure 6. Unclamped inductive load test circuits Figure 8. Unclamped inductive waveforms VIN Figure 7. Input charge test circuit GEN ND8003 Doc ID 15626 Rev. 5 11/22 Protection features VNN3NV04P-E, VNS3NV04P-E 3.1 Electrical characteristics curves Figure 9. Thermal impedance for SOT-223 Figure 10. Derating curve Figure 11. Transconductance Figure 12. Static drain-source on resistance vs input voltage (part 1/2) Gfs (S) Rds(on) (mohms) 11 300 10 275 Vds=13V Tj=-40C 9 250 Tj=25C 8 Tj=150C 225 Tj=150C 7 200 175 6 Id=3.5A Id=1A 150 5 Tj=25C 125 4 100 3 Tj=-40C 75 Id=3.5A Id=1A 50 Id=3.5A Id=1A 2 1 25 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 3 3.5 4 4.5 Id (A) Figure 13. Static drain-source on resistance vs input voltage (part 2/2) 5.5 6 6.5 Figure 14. Source-drain diode forward characteristics Rds(on) (mohms) Vsd (mV) 250 1100 1050 225 Vin=0V Id=1.5A 200 1000 175 950 Tj=150C 150 900 125 850 100 800 75 750 Tj=25C 50 700 Tj=-40C 25 650 0 600 3 3.5 4 4.5 5 5.5 6 6.5 Vin(V) 12/22 5 Vin(V) 0 1 2 3 4 5 6 Id (A) Doc ID 15626 Rev. 5 7 8 9 10 11 12 VNN3NV04P-E, VNS3NV04P-E Protection features Figure 15. Static drain source on resistance Rds(on) (ohms) Figure 16. Turn-on current slope (part 1/2) di/dt(A/us) 4.5 5 Tj=-40C 4 4.5 Vin=2.5V Vin=5V Vdd=15V Id=1.5A 4 3.5 3.5 3 3 2.5 2.5 2 2 1.5 1.5 Tj=25C 1 1 Tj=150C 0.5 0.5 0 0 0 0 0.05 0.1 0.15 0.2 0.25 500 250 750 1000 1250 1500 1750 2000 2250 2500 0.3 Rg(ohm) Id(A) Figure 17. Turn-on current slope (part 2/2) Figure 18. Transfer characteristics di/dt(A/usec) Idon(A) 1.75 2.25 Tj=25C 1.5 2 Vds=13.5V Vin=3.5V Vdd=15V Id=1.5A 1.25 1.75 1.5 1 1.25 1 0.75 Tj=150C Tj=-40C 0.75 0.5 0.5 0.25 0.25 0 0 0 250 1.5 750 1000 1250 1500 1750 2000 2250 2500 500 2 1.75 2.5 2.25 3 2.75 Rg(ohm) 3.5 3.25 4 3.75 4.5 4.25 5 4.75 Vin(V) Figure 19. Static drain-source on resistance vs Id Figure 20. Input voltage vs input charge Rds(on) (mohms) Vin (V) 250 6 225 Vin=5V 5 200 Tj=150C Vds=12V Id=0.5A 175 4 150 3 125 Tj=25C 100 2 75 50 1 Tj= - 40C 25 0 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 1 2 3 4 5 6 Qg (nC) Id (A) Doc ID 15626 Rev. 5 13/22 Protection features VNN3NV04P-E, VNS3NV04P-E Figure 21. Turn-off drain source voltage slope Figure 22. Turn-off drain source voltage slope (part 1/2) (part 2/2) dv/dt(V/usec) dv/dt(V/usec) 300 300 275 275 250 225 Vin=3.5V Vdd=15V Id=1.5A 250 Vin=5V Vdd=15V Id=1.5A 225 200 200 175 175 150 150 125 125 100 100 75 75 50 50 25 25 0 0 0 500 250 1000 1500 750 1250 2000 1750 2500 0 2250 500 250 1000 750 1500 1250 Rg(ohm) 2000 1750 2500 2250 Rg(ohm) Figure 23. Capacitance variations Figure 24. Output characteristics Id (A) C(pF) 5 350 Vin=5V 4.5 Vin=4V 300 4 f=1MHz Vin=0V 3.5 Vin=3V 250 3 2.5 200 2 150 1.5 1 100 0.5 50 0 0 5 10 15 20 25 30 35 0 1 2 3 4 5 Vds(V) 6 7 8 9 Figure 25. Normalized on resistance vs temperature Figure 26. Switching time resistive load (part 1/2) v Rds(on) (mOhm) t(usec) 4 4 3.5 3.5 Vin=5V Id=1.5A 3 td(off) Vdd=15V Id=1.5A Vin=5V 3 tr 2.5 2.5 2 tf 2 1.5 1 1.5 td(on) 0.5 1 0 0 0.5 -25 0 25 50 75 100 125 150 175 Tc )C) 14/22 500 250 -50 10 Vds (V) Doc ID 15626 Rev. 5 1000 750 1500 1250 Rg(ohm) 2000 1750 2500 2250 VNN3NV04P-E, VNS3NV04P-E Protection features Figure 27. Switching time resistive load (part 2/2) Figure 28. Normalized input threshold voltage vs temperature Vinth (V) t(nsec) 2 900 1.8 800 tr Vdd=15V Id=1.5A Rg=220ohm 700 Vds=Vin Id=1mA 1.6 1.4 600 1.2 500 1 400 0.8 td(off) 300 0.6 tf 200 0.4 td(on) 100 0.2 0 0 3.25 3.5 3.75 4 4.25 4.5 4.75 5 -50 5.25 -25 0 25 50 75 100 125 150 175 Tc (C) Vin(V) Figure 29. Normalized current limit vs junction Figure 30. Step response current limit temperature Ilim (A) 10 Tdlim(usec) 13 9 12.5 Vin=5V Vds=13V 8 Vin=5V Rg=220ohm 12 7 11.5 11 6 10.5 5 10 4 9.5 3 9 2 8.5 8 1 7.5 0 5 -50 -25 0 25 50 75 100 125 150 175 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 32.5 Vdd(V) Tc (C) Doc ID 15626 Rev. 5 15/22 Package and packing information 4 VNN3NV04P-E, VNS3NV04P-E Package and packing information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 4.1 SOT-223 mechanical data Table 5. SOT-223 mechanical data Millimeters Symbol Min. Typ. Max. A 1.8 B 0.6 0.7 0.85 B1 2.9 3 3.15 c 0.24 0.26 0.35 D 6.3 6.5 6.7 e 2.3 e1 4.6 E 3.3 3.5 3.7 H 6.7 7 7.3 V A1 10 (max) 0.02 0.1 Figure 31. SOT-223 package dimensions 0046067 16/22 Doc ID 15626 Rev. 5 VNN3NV04P-E, VNS3NV04P-E 4.2 Package and packing information SO-8 mechanical data Table 6. SO-8 mechanical data Millimeters Symbol Min Typ A a1 Max 1.75 0.1 0.25 a2 1.65 a3 0.65 0.85 b 0.35 0.48 A 1.75 A1 0.10 A2 1.25 b 0.28 0.48 c 0.17 0.23 D(1) 4.80 4.90 5.00 E 5.80 6.00 6.20 E1(2) 3.80 3.90 4.00 e 0.25 1.27 h 0.25 0.50 L 0.40 1.27 L1 k 1.04 0 ccc 8 0.10 1. Dimension "D" does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both side). 2. Dimension "E1" does not include interlead flash or protrusions. Interlead flash or protrusions shall not exceed 0.25 mm per side. Doc ID 15626 Rev. 5 17/22 Package and packing information VNN3NV04P-E, VNS3NV04P-E Figure 32. SO-8 package dimensions 0016023 D 18/22 Doc ID 15626 Rev. 5 VNN3NV04P-E, VNS3NV04P-E 4.3 Package and packing information SOT-223 packing information Figure 33. SOT-223 tape and reel shipment (suffix "TR") REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 12.4 60 18.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 12 4 8 1.5 1.5 5.5 4.5 2 All dimensions are in mm. End Start Top cover tape No components Components No components 500mm min Empty components pockets saled with cover tape. 500mm min User direction of feed Doc ID 15626 Rev. 5 19/22 Package and packing information 4.4 VNN3NV04P-E, VNS3NV04P-E SO-8 packing information Figure 34. SO-8 tube shipment (no suffix) B Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1) C A 100 2000 532 3.2 6 0.6 All dimensions are in mm. Figure 35. SO-8 tape and reel shipment (suffix "TR") REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.4 All dimensions are in mm. TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) All dimensions are in mm. 12 4 8 1.5 1.5 5.5 4.5 2 End Start Top No components Components No components cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 20/22 Doc ID 15626 Rev. 5 500mm min VNN3NV04P-E, VNS3NV04P-E 5 Revision history Revision history Table 7. Document revision history Date Revision Changes 24-May-2009 1 Initial release. 21-Jul-2009 2 Updated Table 1: Device summary. 29-Sep_2009 3 Removed target specification on cover page. 10-May-2012 4 Updated Table 1: Device summary Table 2: Absolute maximum ratings: - RIN MIN: changed unit to (it was W) 18-Sep-2013 5 Updated Disclaimer. Doc ID 15626 Rev. 5 21/22 VNN3NV04P-E, VNS3NV04P-E Please Read Carefully: Information in this document is provided solely in connection with ST products. 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