This is information on a product in full production.
September 2013 Doc ID 15626 Rev. 5 1/22
1
VNN3NV04P-E
VNS3NV04P-E
OMNIFET II
fully autoprotected Power MOSFET
Datasheet
−
production data
Features
■
Linear curr en t limi tation
■
Thermal shutdown
■
Short circuit protection
■
Integrated clamp
■
Low current drawn from input pin
■
Diagnostic feedback through input pin
■
ESD protection
■
Direct access to the gate of the Power
MOSFET (analog driving)
■
Compatible with standard Power MOSFET in
compliance with the 2002/95/EC European
directive
Description
The VNN3NV04P-E, VNS3NV04P-E, are
monolithic devices designed in
STMicroelectronics
®
VIPowe r
®
M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Type R
DS(on)
I
lim
V
clamp
VNN3NV04P-E
VNS3NV04P-E 120 mΩ3.5 A 40 V
Table 1. Device summary
Package Order codes
Tube Tape and reel
SOT-223 — VNN3NV04PTR-E
SO-8 VNS3NV04P-E VNS3NV04PTR-E
SOT-223 SO-8
12
2
3
www.st.com
Contents VNN3NV04P-E, VNS3NV04P-E
2/22 Doc ID 15626 Rev. 5
Contents
1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.1 SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2 SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.3 SOT-223 packing infor m ation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.4 SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
VNN3NV04P-E, VNS3NV04P-E List of tables
Doc ID 15626 Rev. 5 3/22
List of tables
Table 1. Device summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 4. Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 5. SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 6. SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 7. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
List of figures VNN3NV04P-E, VNS3NV04P-E
4/22 Doc ID 15626 Rev. 5
List of figures
Figure 1. Block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 4. Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5. Test circuit for diode recovery times. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 6. Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 7. Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 8. Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 9. Thermal impedance for SOT-223 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 10. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 11. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 12. Static drain-source on resistance vs input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 13. Static drain-source on resistance vs input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 14. Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 15. Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 16. Turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 17. Turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 18. Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 19. Static drain-source on resistance vs Id. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 20. Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 21. Turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 22. Turn-off drain source voltage slope (part 2/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 23. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 24. Output characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 25. Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 26. Switching time resistive load (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 27. Switching time resistive load (part 2/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 28. Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 29. Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 30. Step response current limit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 31. SOT-223 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 32. SO-8 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 33. SOT-223 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 34. SO-8 tube shipment (no suffix). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 35. SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
VNN3NV04P-E, VNS3NV04P-E Block diagram and pin description
Doc ID 15626 Rev. 5 5/22
1 Block diagram and pin description
Figure 1. Block diagram
Figure 2. Configuration diagram (top view)
1. For the pins configuration related to SOT-223 see outlines at page 1.
Overvoltage
Gate
Linear
DRAIN
SOURCE
Clamp
1
2
3
Current
Limiter
Control
Over
Temperature
INPUT
FC01000
SO-8 Package
(1)
DRAIN
DRAIN
DRAIN
DRAIN
INPUT
SOURCE
SOURCE
SOURCE 1
45
8
Electrical specifications VNN3NV04P-E, VNS3NV04P-E
6/22 Doc ID 15626 Rev. 5
2 Electrical specifications
Figure 3. Current and voltage conventions
2.1 Absolute maximum ratings
DRAIN
INPUT
SOURCE
I
D
I
IN
V
IN
V
DS
R
IN
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
SOT-223 SO-8
V
DS
Drain-s ourc e vol t ag e (V
IN
= 0 V) Internally clamped V
V
IN
Input voltage Intern al ly cl am ped V
I
IN
Input cur rent +/-20 mA
R
IN MIN
Minimum input series impedance 220 Ω
I
D
Drain current Internally limited A
I
R
Reverse DC output current -5.5 A
V
ESD1
Electrostatic discharg e (R = 1.5 KΩ, C = 100 pF) 4000 V
V
ESD2
Electrostatic discharge on output pin only
(R = 330 Ω, C = 150 pF) 16500 V
P
tot
Total dissipation at T
c
=25°C 7 8.3 W
T
j
Operating junction temperature Internally limited °C
T
c
Case operating temperature Internally limited °C
T
stg
Storage temperature -55 to 150 °C
VNN3NV04P-E, VNS3NV04P-E Electrical specifications
Doc ID 15626 Rev. 5 7/22
2.2 Thermal data
2.3 Electrical characteristics
-40°C < T
j
< 150°C, unless otherwise specified.
Table 3. Thermal data
Symbol Parameter Value Unit
SOT-223 SO-8
R
thj-case
Thermal resistance junction-case max 18 °C/W
R
thj-lead
Thermal resistance junction-lead max 15 °C/W
R
thj-amb
Thermal resistance junction-ambient max 70
(1)
1. When mounted on a standard single-sided FR4 board with 50 mm
2
of Cu (at least 35 mm thick) connected
to all DRAIN pins.
65
(1)
°C/W
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min Typ Max Unit
Off
V
CLAMP
Drain-source clamp voltage V
IN
=0V; I
D
= 1.5 A 40 45 55 V
V
CLTH
Drain-source clamp threshold
voltage V
IN
=0V; I
D
=2mA 36 V
V
INTH
Input threshold voltage V
DS
=V
IN
; I
D
=1mA 0.5 2.5 V
I
ISS
Supply current fr om input pi n V
DS
=0V; V
IN
= 5 V 100 150 µA
V
INCL
Input-source clamp voltage I
IN
=1mA 6 6.8 8 V
I
IN
= -1 mA -1.0 -0.3 V
I
DSS
Zero input voltage drain
current (V
IN
=0V) V
DS
=13V; V
IN
=0V; T
j
=25°C 30 µA
V
DS
=25V; V
IN
=0V 75 µA
On
R
DS(on)
Static drain-source on
resistance V
IN
=5V; I
D
= 1.5 A; T
j
= 25°C 120 mΩ
V
IN
=5V; I
D
= 1.5 A 240 mΩ
Dynamic (T
j
=25 °C, unless otherwise specified)
g
fs
(1)
Forward transconductance V
DD
=13V; I
D
=1.5A 5.0 S
C
OSS
Output capacitance V
DS
=13V; f=1MHz; V
IN
= 0 V 150 pF
Switching
(T
j
= 25°C, unless otherwise specified)
t
d(on)
Turn-on delay time
V
DD
=15V; I
D
= 1.5 A; V
gen
=5V;
R
gen
=R
IN MIN
=220Ω (see Figure 4)
90 300 ns
t
r
Rise time 250 750 ns
t
d(off)
Turn-off delay time 450 1350 ns
t
f
Fall time 250 750 ns
Electrical specifications VNN3NV04P-E, VNS3NV04P-E
8/22 Doc ID 15626 Rev. 5
t
d(on)
Turn-on delay time
V
DD
=15V; I
D
= 1.5 A; V
gen
=5V;
R
gen
=2.2KΩ (see Figure 4)
0.45 1.35 µs
t
r
Rise time 2.5 7.5 µs
t
d(off)
Turn-off delay time 3.3 10.0 µs
t
f
Fall time 2.0 6.0 µs
(dI/dt)
on
Turn-on current slope V
DD
=15V; I
D
= 1.5 A; V
gen
=5V;
R
gen
=R
IN MIN
=220Ω4.7 A/µs
Q
i
Total input charge V
DD
=12V; I
D
= 1.5 A; V
IN
=5V;
I
gen
=2.13mA (seeFigure 7)8.5 nC
Source drain diode (T
j
=25°C, unless otherwise specified)
V
SD(1)
Forward on voltage I
SD
= 1.5 A; V
IN
=0V 0.8 V
t
rr
Reverse recovery time I
SD
= 1.5 A; dI/dt = 12 A/µs;
V
DD
=30V; L=200µH
(see Figure 5)
107 ns
Q
rr
Reverse recovery charge 37 µC
I
RRM
Reverse recovery current 0.7 A
Protections (-40°C < T
j
< 150°C, unless otherwise specified)
I
lim
Drain current limit V
IN
=5V; V
DS
=13V 3.5 5 7 A
t
dlim
St ep response current limit V
IN
=5V; V
DS
=13V 10 µs
T
jsh
Over temperature shutdown 150 175 200 °C
T
jrs
Over temperature reset 135 °C
I
gf
Fault sink cur rent V
IN
=5V; V
DS
=13V; T
j
=T
jsh
10 15 20 mA
E
as
Single pulse avalanche
energy
starting T
j
=25°C; V
DD
=24V;
V
IN
=5V; R
gen
=R
IN MIN
= 220 Ω;
L = 24 mH ( see Figure 6 and
Figure 8)
100 mJ
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 4. Electrical characteristics (continued)
Symbol Parameter Test conditions Min Typ Max Unit
VNN3NV04P-E, VNS3NV04P-E Protection features
Doc ID 15626 Rev. 5 9/22
3 Protection features
During normal operation, the input pin is electrically connected to the gate of the internal
Power MOSFET through a low impedance path.
The device then behaves like a standard Power MOSFET and can be used as a switch from
DC up to 50 kHz. The only difference from the user’s standpoint is that a small DC current
I
ISS
(typ. 100 µA) flows into the input pin in order to supply the internal circuitry.
The device integrates:
●
Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche
characteristics of the Power MOSFET stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly important when driving inductive
loads.
●
Linear current limiter circuit: limits the drain current I
D
to I
lim
whatever the input pin
voltages. When the current limiter is active, the device operates in the linear region, so
power dissipation may exceed the capability of the heatsink. Both case and junction
temperatures increase, and if this phase lasts long enough, junction temperature may
reach the over temperature threshold T
jsh
.
●
Overtemperature and short circuit protection: these are based on sensing the chip
temperature and are not dependent on the input voltage. The location of the sensing
element on the chip in the power stage area ensures fast, accurate detection of the
junction temperature. Overtemperature cutout occurs in the range 150°C to 190°C, a
typical value being 170°C. The device is automatically restarted when the chip
temperature falls of about 15°C below shutdown temperature.
●
S tatus feedback: in the case of an overtemperature fault condition (T
j
> T
jsh
), the de vice
tries to sink a diagnostic current I
gf
through the input pin in order to indicate fault
condition. If driven from a low impedance source, this current may be used in order to
warn the control circuit of a device shutdown. If the drive impedance is high enough so
that the input pin driver is not able to supply the current I
gf
, the input pin will fall to 0 V.
This will not however affect the device operation: no requirement is put on the current
capability of the input pin driver except to be able to supply the normal operation drive
current I
ISS
.
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL logic circuit.
Protection features VNN3NV04P-E, VNS3NV04P-E
10/22 Doc ID 15626 Rev. 5
Figure 4. Switching time test circuit for resistive load
Figure 5. Test circuit for diode recovery times
R
gen
V
gen
V
D
t
I
D
90%
10%
t
V
gen
t
d(on)
t
d(off)
t
f
t
r
L=100uH
A
B
8.5
Ω
V
DD
R
gen
FAST
DIODE
OMNIFET
A
D
I
S
220
Ω
B
OMNIFET
D
S
I
V
gen
VNN3NV04P-E, VNS3NV04P-E Protection features
Doc ID 15626 Rev. 5 11/22
Figure 6. Unclamped inductiv e load te st
circuits Figure 7. Input charge test circuit
Figure 8. Unclamped inductive waveforms
GEN
ND8003
V
IN
Protection features VNN3NV04P-E, VNS3NV04P-E
12/22 Doc ID 15626 Rev. 5
3.1 Electrical characteristics curves
Figure 9. Thermal impedance for SOT-223 Figure 10. Derating curve
Figure 11. Transconductance Figure 12. Static drain-source on resistance
vs input voltage (part 1/2)
Figure 13. Static drain-source on resistance
vs input voltage (part 2/2) Figure 14. Source-drain diode forward
characteristics
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Id (A)
0
1
2
3
4
5
6
7
8
9
10
11
Gfs (S)
Vds=13V
Tj=25ºC
Tj=150ºC
Tj=-40ºC
3 3.5 4 4.5 5 5.5 6 6.5
Vin(V)
0
25
50
75
100
125
150
175
200
225
250
275
300
Rds(on) (mohms)
Id=3.5A
Id=1A
Id=3.5A
Id=1A
Id=3.5A
Id=1A
Tj=25ºC
Tj=150ºC
Tj=-40ºC
33.544.555.566.5
Vin(V)
0
25
50
75
100
125
150
175
200
225
250
Rds(on) (mohms)
Id=1.5A
Tj=150ºC
Tj=-40ºC
Tj=25ºC
0123456789101112
Id (A)
600
650
700
750
800
850
900
950
1000
1050
1100
Vsd (mV)
Vin=0V
VNN3NV04P-E, VNS3NV04P-E Protection features
Doc ID 15626 Rev. 5 13/22
Figure 15. Static drain source on resistance Figure 16. Turn-on current slope (part 1/2)
Figure 17. Turn-on current slope (part 2/2) Figure 18. Transfer characteristics
Figure 19. Static drain-source on resistance
vs Id Figure 20. Input voltage vs input charge
0250 500 750 1000 1250 1500 1750 2000 2250 2500
Rg(ohm)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
di/dt(A/us)
Vin=5V
Vdd=15V
Id=1.5A
0250 500 750 1000 1250 1500 1750 2000 2250 2500
Rg(ohm)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
di/dt(A/usec)
Vin=3.5V
Vdd=15V
Id=1.5A
1.5 1.75 22.25 2.5 2.75 33.25 3.5 3.75 44.25 4.5 4.75 5
Vin(V)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
Idon(A)
Vds=13.5V
Tj=150ºC
Tj=25ºC
Tj=-40ºC
0 0.5 1 1.5 2 2.5 3 3.5 4
Id (A)
0
25
50
75
100
125
150
175
200
225
250
Rds(on) (mohms)
Tj=25ºC
Tj=150ºC
Tj= - 40ºC
Vin=5V
0123456
Qg (nC)
0
1
2
3
4
5
6
Vin (V)
Vds=12V
Id=0.5A
Protection features VNN3NV04P-E, VNS3NV04P-E
14/22 Doc ID 15626 Rev. 5
Figure 21. Turn-off drain source voltage slope
(part 1/2) Figure 22. Turn-off drain source voltage slope
(part 2/2)
Figure 23. Capacitance variations Figure 24. Output characteristics
Figure 25. Normalized on resistance vs
temperature Figure 26. Switching time resistive load
(part 1/2)
v
0250 500 750 1000 1250 1500 1750 2000 2250 2500
Rg(ohm)
0
25
50
75
100
125
150
175
200
225
250
275
300
dv/dt(V/usec)
Vin=5V
Vdd=15V
Id=1.5A
0250 500 750 1000 1250 1500 1750 2000 2250 2500
Rg(ohm)
0
25
50
75
100
125
150
175
200
225
250
275
300
dv/dt(V/usec)
Vin=3.5V
Vdd=15V
Id=1.5A
012345678910
Vds (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Id (A)
Vin=4V
Vin=5V
Vin=3V
-50 -25 0 25 50 75 100 125 150 175
Tc )ºC)
0.5
1
1.5
2
2.5
3
3.5
4
Rds(on) (mOhm)
Vin=5V
Id=1.5A
0250 500 750 1000 1250 1500 1750 2000 2250 2500
Rg(ohm)
0
0.5
1
1.5
2
2.5
3
3.5
4
t(usec)
Vdd=15V
Id=1.5A
Vin=5V
td(off)
tr
td(on)
tf
VNN3NV04P-E, VNS3NV04P-E Protection features
Doc ID 15626 Rev. 5 15/22
Figure 27. Switching time resistive load
(part 2/2) Figure 28. Normalized input threshold voltage
vs temperature
Figure 29. Normalized current limit vs junction
temperature F igure 30. Step response cur rent limit
3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25
Vin(V)
0
100
200
300
400
500
600
700
800
900
t(nsec)
Vdd=15V
Id=1.5A
Rg=220ohm
tf
tr
td(off)
td(on)
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Vinth (V)
Vds=Vin
Id=1mA
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
1
2
3
4
5
6
7
8
9
10
Ilim (A)
Vin=5V
Vds=13V
5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 32.5
Vdd(V)
7.5
8
8.5
9
9.5
10
10.5
11
11.5
12
12.5
13
Tdlim(usec)
Vin=5V
Rg=220ohm
Package and packing information VNN3NV04P-E, VNS3NV04P-E
16/22 Doc ID 15626 Rev. 5
4 Package and packing information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
4.1 SOT-223 mechanical data
Figure 31. SOT-223 package dimensions
Table 5. SOT-223 mechanical data
Symbol Millimeters
Min. Typ. Max.
A1.8
B0.60.70.85
B1 2.9 3 3.15
c 0.24 0.26 0.35
D 6.3 6.5 6.7
e2.3
e1 4.6
E 3.3 3.5 3.7
H6.777.3
V 10 (max)
A1 0.02 0.1
0046067
VNN3NV04P-E, VNS3NV04P-E Package and packing information
Doc ID 15626 Rev. 5 17/22
4.2 SO-8 mechanical data
Table 6. SO-8 mechanical data
Symbol Millimeters
Min Typ Max
A1.75
a1 0.1 0.25
a2 1.65
a3 0.65 0.85
b0.35 0.48
A 1.75
A1 0.10 0.25
A2 1.25
b 0.28 0.48
c 0.17 0.23
D
(1)
1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs
shall not exceed 0.15 mm in total (both side).
4.80 4.90 5.00
E 5.80 6.00 6.20
E1
(2)
2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not
exceed 0.25 mm per side.
3.80 3.90 4.00
e 1.27
h 0.25 0.50
L 0.40 1.27
L1 1.04
k 0° 8°
ccc 0.10
Package and packing information VNN3NV04P-E, VNS3NV04P-E
18/22 Doc ID 15626 Rev. 5
Figure 32. SO-8 package dimensions
001602 3 D
VNN3NV04P-E, VNS3NV04P-E Package and packing information
Doc ID 15626 Rev. 5 19/22
4.3 SOT-223 packing information
Figure 33. SOT-223 tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Q.t y 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13
F20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max ) 18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
All dimensions are in mm.
Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Compone nt Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2
Top
cover
tape
End
Start
No componentsNo components Components
500mm min
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
Package and packing information VNN3NV04P-E, VNS3NV04P-E
20/22 Doc ID 15626 Rev. 5
4.4 SO-8 packing information
Figure 34. SO-8
tube shipment (no suffix)
Figure 35. SO-8 tape and reel shipment (suffix “TR”)
All d imensions are in mm.
Base Q.ty 100
Bul k Q.ty 2000
Tube leng th (± 0.5) 532
A3.2
B6
C (± 0.1) 0.6
C
B
A
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
All dimensions are in mm.
Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2
Top
cover
tape
End
Start
No componentsNo components Components
500mm min
500mm min
Empty components pockets
saled with cover ta pe.
User direction of feed
REEL DIMENSIONS
All dimensions are in mm.
Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13
F20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4
VNN3NV04P-E, VNS3NV04P-E Revision history
Doc ID 15626 Rev. 5 21/22
5 Revision history
Table 7. Document revision history
Date Revision Changes
24-May-2009 1 Initial release.
21-Jul-2009 2 Updated Table 1: Device summ ary .
29-Sep_2009 3 Removed target specification on cover page.
10-May-2012 4 Updated Table 1: De vice su mmary
Table 2: Absolute maximum ratings:
–R
IN MIN
: changed unit to Ω (it was W)
18-Sep-2013 5 Updated Disclaimer.
VNN3NV04P-E, VNS3NV04P-E
22/22 Doc ID 15626 Rev. 5
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