MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features * * MBR10150CT 10 Amp High Voltage High Junction Temperature Capability Good Trade Off Between Leakage Current And Forward Volage Drop Low Leakage Current * Power Schottky Barrier Rectifier 150Volts Maximum Ratings * * * * Operating J unction Temperature : 150C Storage Temperature: - 50C to +150C Per d iode Thermal Resistance 4C/W Junction to Case Total Thermal Resistance 2.4C/W Junction to Case MCC Catalog Number MBR 10150 CT Maximum Recurrent Peak Reverse Voltage 150 V Maximum RMS Voltage 105V TO-220AB B L M Maximum DC Blocking Voltage 150 V C D A K E PIN 1 3 F G I J N H H Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage MBR10150CT Maximum Reverse Current At Rated DC Blocking Voltage IF(AV) IFSM 10 A 120A TC = 155 C PIN 1 PIN 2 CASE PIN 3 8.3ms half sine VF .92V VF .75V IR 50 A 7m A IFM = 5A TJ = 25C I FM = 5A TJ = 125C TJ = 25C TJ = 125C A B C D E F G H I J K L M N INCHES .600 .620 .393 .409 .104 .116 .244 .259 .356 .361 .137 .154 .511 .551 .094 .106 .024 .034 .019 .027 .147 .151 .173 .181 .048 .051 0.102 t y p. * Pulse Test: Pulse Width380sec, Duty Cycle 2% www.mccsemi.com MM 15.25 15.75 10.00 10.40 2.65 2.95 6.20 6.60 9.05 9.15 3.50 3.93 13.00 14.00 2.40 2.70 0.61 0.88 0.49 0.70 3.75 3.85 4.40 4.60 1.23 1.32 2.6 t yp . MCC MBR10150CT Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 5.0 = 0.2 = 0.5 = 0.1 4.5 4.0 = 0.05 3.5 =1 3.0 2.5 2.0 1.5 T 1.0 0.5 IF(av) (A) tp =tp/T 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 2: Average forward current versus ambient temperature ( = 0.5, per diode). IF(av)(A) 6 Rth(j-a)=Rth(j-c) 5 4 Rth(j-a)=15C/W 3 2 T 1 0 =tp/T 0 Tamb(C) tp 25 50 75 100 125 150 175 Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) IM(A) 1.0 80 70 0.8 60 50 Tc=50C 0.6 Tc=75C 0.4 = 0.5 40 30 20 = 0.2 = 0.1 Tc=125C IM 10 Single pulse t(s) t =0.5 0 1E-3 1E-2 T 0.2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode) 0.0 1E-3 tp(s) =tp/T 1E-2 tp 1E-1 1E+0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). IR(A) C(pF) 1E+5 200 F=1MHz Tj=25C Tj=175C 1E+4 100 Tj=150C 1E+3 Tj=125C 1E+2 50 Tj=75C 1E+1 1E+0 Tj=25C 20 1E-1 1E-2 VR(V) 0 25 50 75 VR(V) 100 125 150 10 1 2 5 10 20 www.mccsemi.com 50 100 200 MCC MBR10150CT Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35m) (STPS10150CG only). IFM(A) Rth(j-a) (C/W) 100.0 80 70 Tj=125C Typical values 10.0 60 Tj=125C 50 Tj=25C 40 30 1.0 20 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 0 S(cm) 0 2 4 6 8 10 www.mccsemi.com 12 14 16 18 20