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MBR10150CT
10 Amp High Voltage
Features
• High Junction Temperature Capability
• Good Trade Off Between Leakage Current
And Forward Volage Drop
• Low Leakage Current
MCC
Catalog
Number
Maximum
Re current
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
MBR 10150 CT 150 V 105V 150 V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current IF(AV) 10 A TC = 155°C
Peak Forward Surge
Current IFSM 120A 8.3ms half sine
Maximum
Instantaneous
Forward Voltage
MBR 10150CT
VF
.92 V
MCC
*Pulse Test: Pulse Width38 0µsec, Duty Cycle 2%
I
FM = 5A
TJ = 25°C
INCHES MM
A .600 .620 15.25 15.75
B .393 .409 10.00 10.40
N 0.102 ty p. 2.6 typ.
PIN 1
PIN 3 PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
150Volts
TO-220AB
PIN
13
Maximum Ratings
• Operating Junction Temperature : 150°C
• Storage Temperature: - 50°C to +150°C
• Per d iode Thermal Resistance 4°C/W Junction to Case
omponents
21201 Itasca Street Chatsworth
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C .104 .116 2.65 2.95
D .244 .259 6.20 6.60
E .356 .361 9.05 9.15
F .137 .154 3.50 3.93
G .511 .551 13.00 14.00
H .094 .106 2.40 2.70
I .024 .034 0.61 0.88
J .019 .027 0.49 0.70
K .147 .151 3.75 3.85
L .173 .181 4.40 4.60
M .048 .051 1.23 1.32
• Total Thermal Resistance 2.4°C/W Junction to Case
Barrier Rectifier
Power Schottky
Maximum
Reverse Current At
Rated DC Blocking
Voltage
IR
50 µ A T
J = 25°C
7m A T
J = 125°C
VF
.75V I
FM = 5A
T
J = 125°C
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MBR10150CT
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IF(av) (A)
PF(av)(W)
δ= 0.05
δ= 0.1 δ= 0.2 δ= 0.5
δ= 1
T
δ=tp/T tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0 25 50 75 100 125 150 175
0
1
2
3
4
5
6
Tamb(°C)
IF(av)(A)
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T
δ=tp/T tp
Fig. 2: Average forward current versus ambient
temperature (δ= 0.5, per diode).
1E-3 1E-2 1E-1 1E+0
0
10
20
30
40
50
60
70
80
t(s)
IM(A)
Tc=50°C
Tc=75°C
Tc=125°C
IM
t
δ=0.5
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
δ= 0.5
δ= 0.2
δ= 0.1
Single pulse
T
δ=tp/T tp
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
0 25 50 75 100 125 150
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
VR(V)
IR(µA)
Tj=75°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=175°C
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
1 2 5 10 20 50 100 200
10
20
50
100
200
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
MCC
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MBR10150CT
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Tj=125°C
Tj=25°C
Tj=125°C
Typical values
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
0 2 4 6 8 101214161820
0
10
20
30
40
50
60
70
80
S(cm²)
Rth(j-a) (°C/W)
Fig. 8: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35µm)
(STPS10150CG only).
MCC
