©2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.0
Features
Fixed frequency
Internal Burst mode Controller for Stand-by mode
Pulse by pulse over current limiting
Over current protection(Auto restart mode)
Over voltage protection (Auto restart mode)
Over load protection(Auto restart mode)
Internal thermal shutdown function(Latch mode)
Under vol ta g e lock out
Internal high voltage sense FET
•Soft start
Description
The Fairchild Power Switch(SPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(SPS) consist of
high voltage power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed oscillator,
under voltage lock out, leading edge blanking, optimized gate
turn-on/turn-off driver, thermal shut down protection, over
voltage protection, and temperature compensated precision
current sources for loop compensation and fault protection
circuitry. Compared to discrete MOSFET and controller or
RCC switching converter solution, a Fairchild Power
Switch(SPS) can reduce total component count, design size,
and weight and at the same time increase efficiency,
productivity, and system reliability. It has a basic platform
well suited for cost effective LCD monitor power supply.
TO-220F-5L
1
Internal Block Diagram
S
R
Q
S
R
QS
R
QTSD
(Tj=160 )
Ifb
1
11
13
33
3
5
55
5
4
44
4
2
22
2
Vref
Rsenese
2.5R
R
Vref
Internal
Bias Vref
UVLO
Ron
Roff
PWM
OCL
Burst mode
controller
Filter
(130nsec)
Power-on
Reset
(Vcc=6.5V)
UVLO Reset
(Vcc=9V)
OLP
OVP
Vth=7.5V
Vcc
Vth=30V
Vth=1V
Vfb Offset
Idelay
Vcc
Vfb
Vth=1V
Vcc
Vth=11V/12V
OSC
Vref
FS6M07652RT
Fairchild Pow er Switch(SPS)
FS6M07652RT
2
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=81mH, starting Tj=25°C
4. L=13uH, starting Tj=25°C
Parameter Symbol Value Unit
Drain-source(GND) voltage (1) VDSS 650 V
Drain-Gate Voltage (RGS=1M)V
DGR 650 V
Gate-source (GND) Voltage VGS ±30 V
Drain current pulsed (2) IDM 14.4 ADC
Single pulsed avalanche energy (3) EAS 570 mJ
Single Pulsed Avalanche current (4) IAS 17 A
Continuous drain current (Tc = 25°C) ID3.6 ADC
Continuous drain current (TC=100°C) ID2.28 ADC
Supply voltage VCC 40 V
Input Voltage Range VFB 0.3 to VCC V
VS_S 0.3 to 10 V
Total Power Dissipation PD(Watt H/S) TO-220F;46 W
Derating TO-220F;0.37 W/°C
Operating junction temperature Tj+160 °C
Operating Ambient Temperature TA25 to +85 °C
Storage Temperature range TSTG 55 to +150 °C
FS6M07652RT
3
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Note:
Pulse test : Pulse width 300µS, duty 2%
Parameter Symbol Condition Min. Typ. Max. Unit
Drain-source breakdown voltage BVDSS VGS=0V, ID=250µA 650 - - V
Zero gate voltage drain current IDSS VDS=650V, VGS=0V - - 25 µA
VDS=520V
VGS=0V, TC=125°C- - 300 µA
Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=1.8A - 1.3 1.6
Forward transconductance (note) gfs VDS=50V, ID=1.8A - 3.3 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f = 1MHz
- 1200 1560 pFOutput capacitance Coss - 125 160
Reverse transfer capacitance Crss - 23 30
Turn on delay time td(on) VDD=325V, ID=6.5A
(MOSFET switching
time are essentially
independent of
operating temperature)
-2255
nS
Rise time tr - 70 150
Turn off delay time td(off) - 105 220
Fall time tf - 65 140
Total gate charge
(gate-source+gate-drain) Qg VGS=10V, ID=6.5A,
VDS=520V (MOSFET
Switching time are
Essentially independent of
Operating temperature)
-4052
nC
Gate-source charge Qgs - 6.5 -
Gate-drain (M iller) charge Qgd - 18 -
S1
R
----=
FS6M07652RT
4
Electrical Characteristics
(Ta=25°C unless otherwise specified)
Notes:
(1) These parameters is the current flowing in the Control IC.
(2) These parameters, although guaranteed, are tested in EDS(wafer test) process.
(3) These parameters indicate Inductor Current.
(4) These parameters, although guranteed at the design, are not tested in massing production.
Parameter Symbol Condition Min. Typ. Max. Unit
UVLO SECTION
Start threshold voltage VSTART VFB=GND 14 15 16 V
Stop threshold voltage VSTOP VFB=GND 8 9 10 V
SENSEFET SECTION
Drain to PKG Breakdown voltage BVpkg 60HZ AC, Ta=25°C 3500 - - V
Drain to Source Breakdo wn volt age BVdss Vdrain = 650V, Ta=25°C 650 - - V
Drain to Source Leakage current Idss Vdrain = 650V, Ta=25°C - - 300 uA
OSCILLATOR SECTION
Initial Frequency FOSC -637077kHz
Voltage Stability FSTABLE 12V Vcc 23V 0 1 3 %
Temperature Stability (note4) FOSC -25°C Ta 85°C0±10%
Maximum duty cycle DMAX - 75 80 85 %
Minimum Duty Cycle DMIN - - - 0 %
FEEDBACK SECTION
Feedback source current IFB VFB=GND 0.7 0.9 1.1 mA
Shutdown Feedback voltage VSD Vfb 6.9V 6.9 7.5 8.1 V
Shutdown delay current Idelay VFB=5V 3.2 4.0 4.8 µA
PROTECTION SECTION
Over Voltage Protection VOVP Vsync 11V 27 30 33 V
Over Current Latch Voltage (Note2) VOCL -0.91.01.1V
Thermal Shutdown Temp.(Note4) TSD - 140 160 - °C
SOFTSTART SECTION
Softstar t Vortage VSS Vfb=2 4.7 5.0 5.3 V
Softstar t Current I SS Vss=V 0.8 1.0 1.2 mA
BURST MODE SECTION
Burst mode Low Threshold Voltage VBURL Vfb=0V 10.4 11.0 11.6 V
Burst mode High Threshold Voltage VBURH Vfb=0V 11.4 12.0 12.6 V
Burst mode Enable Feedback Voltage(Note4) VBEN Vcc=10.5V 0.7 1.0 1.3 V
Burst mode Peak Current Limit(Note3) IBU_PK Vcc=10.5V 0.38 0.5 0.62 V
Burst mode Frequency FBUR Vcc=10.5V, Vfb=0V 63 70 77 KHz
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit(Note3) IOVER - 1.76 2.0 2.24 A
TOTAL DEVICE SECTION
Start Up current ISTART Vfb=GND, VCC=14V - 0.1 0.2 mA
Operating suppl y current (Note1) IOP Vfb=GN D, VCC=16V -1015mA
IOP(MIN) Vfb=GND, VCC=10V
IOP(MAX) Vfb=GND, VCC=28V
FS6M07652RT
5
Typica l Perfo rma nce Characteristics
-25 0 25 50 75 100 125 150
0.050
0.075
0.100
0.125
0.150 [mA] St art Up Curr ent vs. Temp
Temp
-25 0 25 50 75 100 125 150
9.0
9.5
10.0
10.5
11.0 [mA] Oper ating Curr ent vs. Temp
Temp
-25 0 25 50 75 100 125 150
14.0
14.5
15.0
15.5
16.0 [V] Star t T hr eshold Voltage vs. T emp
Temp
-25 0 25 50 75 100 125 150
8.0
8.5
9.0
9.5
10.0 [V] Stop Threshold Voltage vs. Temp
Temp
-25 0 25 50 75 100 125 150
64
66
68
70
72
74
76 [KHz] Initia l F re qenc y v s . Te mp
Temp
-25 0 25 50 75 100 125 150
79.0
79.5
80.0
80.5
81.0 [%] M aximum Dut y vs. Temp
Temp
Figure 1. Start Up Current vs. Temp Figure 2. Operating Current vs. Temp
Figure 3. Start Threshold Voltage vs. Temp Figure 4. Stop Threshold Voltage vs. Temp
Figure 5. Initial Freqency vs. Temp Figure 6. Maximum Duty vs. Temp
FS6M07652RT
6
Typica l Perfo rmance Characteristics (Continued)
-25 0 25 50 75 100 125 150
0.20
0.25
0.30
0.35
0.40
0.45 [V] Feedback Of fset Voltage vs. T emp
Temp
-25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1 [mA] Feedback Source Cur r ent vs. Temp
Temp
-25 0 25 50 75 100 125 150
3.2
3.6
4.0
4.4
4.8 [uA] Sh u tDown Del ay Current vs. Temp
Temp
-25 0 25 50 75 100 125 150
7.40
7.45
7.50
7.55
7.60
[V] ShutDown Feedback Voltage vs. Temp
Temp
-25 0 25 50 75 100 125 150
4.98
4.99
5.00
5.01
5.02 [V] Soft star t Voltage vs. Temp
Temp
-25 0 25 50 75 100 125 150
29.0
29.5
30.0
30.5
31.0 [V] O ver Voltage Prot ection vs. Temp
Temp
Figure 7. Feedback O ffset Voltage vs. Temp Figure 8. Feedback Source Current vs. Temp
Figure 9. ShutDown Delay Current vs. Temp Figure 10 . ShutDown Feedback Voltage vs. Temp
Figure 11 . Softstart Voltage vs. Temp Figure 12 . Over Voltage Protection vs. Temp
FS6M07652RT
7
Typica l Perfo rmance Characteristics (Continued)
-25 0 25 50 75 100 125 150
10.8
10.9
11.0
11.1
11.2 [V] Burst M ode Low Volt age vs. T emp
Temp
-25 0 25 50 75 100 125 150
11.8
11.9
12.0
12.1
12.2 [V] Burst M ode High Voltage vs. Temp
Temp
-25 0 25 50 75 100 125 150
0.40
0.45
0.50
0.55
0.60 [A] Burst Mode Peak Curre nt vs . Te mp
Temp
-25 0 25 50 75 100 125 150
1.90
1.95
2.00
2.05
2.10 [A] Over Curr ent Limit vs. Temp
Temp
Figure 13 . Burst Mode Low Voltage vs. Temp Figure 14 . Burst Mode High Voltage vs. Temp
Figure 15 . Burst Mode Peak Current vs. Temp Figure 16 . Over Current Limit vs. Temp
FS6M07652RT
8
Package Dimensions
TO-220F-5L
10.16 ±0.20
2.76 ±0.30
3.18 ±0.30
2.54 ±0.20
9.40 ±0.20
5-0.60 ±0.10
(7.00) (0.70)
(1.01)
1.10TYP 0.80TYP
2-1.30MAX 3-1.00MAX
(#1,#5)
#1 (#2,#4) (#1,#3,#5)
(#2,#3,#4)
#5
(1.50)
(5.40)
ø3.18 ±0.10
(2-ø1.00 (1.00x45°)
Dp 0.10)
(6.50)
(3.50)
(1.80)
15.87 ±0.20
6.68 ±0.20
10.63 ±0.50
18.20 ±0.50
5.63 ±0.505.00 ±0.50
16.08
4.70 ±0.20
3.30 ±0.10
2.54TYP
[2.54 ±0.20]3-1.50TYP
[3-1.50 ±0.20]
0.50 +0.10
–0.05
FS6M07652RT
9
Ordering Information
Product Number Package Operating Temperature
FS6M07652RT TO-220F-5L -25°C to +85°C
FS6M07652RT
4/13/01 0.0m 001
Stock#DSxxxxxxxx
2001 Fairchild Semicond uctor Corporation
LIFE SU PP ORT POL ICY
FAIRCHILD’S PRODUCTS AR E NOT AUTHORIZED FOR USE AS C RITICAL COMPONENTS I N LIFE S UPPORT DEVICE S
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORA TION. As used he rein :
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or syst em who se failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effec tiv ene ss.
www.fairchildsemi.com
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRO DUCTS HEREIN TO IMPROVE RELIABILITY, FUN C TION OR DESIGN . FAIRCHILD DO ES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIG HTS, NOR THE RIGHTS OF OTHERS.