TENTATIVE IGBT MODULE PHMB1200B12 Single 1200A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 1,200g MAXMUM RATINGS (Tc=25C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heat sink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol PHMB1200B12 Unit VCES VGES IC ICP PC Tj Tstg VISO 1200 +/ - 20 1200 2400 5600 -40 to +150 -40 to +125 2500 3 V V FTOR Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff M4 M8 Test Condition A W C C V N*m 1.4 10.5 Min. Typ. Max. 4.0 - 1.9 100000 0.25 0.40 0.25 1.00 24 1.0 2.4 8.0 0.45 0.70 0.35 1.50 VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=1200A,VGE=15V VCE=5V,IC=400mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 0.5 ohm RG= 0.33 ohm VGE= +/- 15V FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value DC 1 ms Forward Current Characteristic s Unit 1200 2400 A Symbol Test Condition Min. Typ. Max. VF trr IF=1200A,VGE=0V IF=1200A,VGE=-10V,di/dt=2400A/s - 1.9 0.4 2.4 0.5 Unit V s Peak Forward Voltage Reverse Recovery Time THERMAL CHARACTERISTICS Characteristic Thermal Impedance IF IFM Unit mA A V V pF IGBT DIODE Symbol Test Condition Min. Typ. Max. Unit Rth(j-c) Junction to Case - - 0.022 0.043 C/W TENTATIVE PHMB1200B12 TC=25 2400 VGE=20V CollectorCurrentI C (A) IC=600A 15V 2000 1600 9V 1200 800 8V 400 TC=25 16 10V 12V 7V CollectortoEmitterVoltageV CE (V) Fig.2-CollectortoEmitterOnVoltage vs.GatetoEmitterVoltage(Typical) Fig.1-OutputCharacteristics(Typical) 14 2400A 1200A 12 10 8 6 4 2 0 0 2 4 6 8 0 10 0 4 8 12 16 20 GatetoEmitterVoltageV GE (V) CollectortoEmitterVoltageV CE (V) Fig.3-CollectortoEmitterOnVoltage vs.GatetoEmitterVoltage (Typical) IC=600A 2400A 14 CollectortoEmitterVoltageV CE (V) 16 800 1200A 12 10 8 6 4 2 RL=0.5 TC =25 700 14 600 12 500 10 8 400 VCE=600V 6 300 400V 200 4 200V 2 100 0 0 4 8 12 16 0 2000 GatetoEmitterVoltageV GE (V) 0 10000 0 20 4000 6000 8000 TotalGateChargeQg (nC) . 500000 200000 100000 50000 Coes 20000 10000 2000 1000 500 200 Cres 5000 Cies V CC=600V R G=0.33 V GE=15V TC=25 tOFF 1.4 SwitchingTimet (s) 1.6 V GE=0V f=1MHZ TC=25 1.2 CapacitanceC(pF) Fig.6-CollectorCurrentvs.SwitchingTime(Typical) Fig.5-Capacitancevs.CollectortoEmitterVoltage(Typical) 1 0.8 tf 0.6 0.4 tON tr 0.2 0.1 0.2 0.5 1 2 5 10 20 CollectortoEmitterVoltageV CE (V) 50 100 200 0 0 200 400 600 800 CollectorCurrentI C (A) 1000 1200 GatetoEmitterVoltageV GE (V) CollectortoEmitterVoltageV CE (V) Fig.4-GateChargevs.CollectortoEmitterVoltage (Typical) TC=125 16 TENTATIVE PHMB1200B12 Fig.8-ForwardCharacteristicsofFreeWheelingDiode Fig.7-SeriesGateImpedancevs.SwitchingTime(Typical) 10 VCC=600V IC=1200A VGE=15V TC=25 5 SwitchingTimet (s) 1 tf 0.5 0.2 0.05 1600 1200 800 400 0.1 TC=125 2000 ton tr TC=25 toff 2 (Typical) 2400 ForwardCurrentI F (A) 0.1 0.2 0.5 1 2 5 10 0 20 0 1 2 3 4 ForwardVoltageV F (V) SeriesGateImpedanceRG () Fig.10-ReverseBiasSafeOperatingArea(Typical) 5000 2000 IF=1200A TC=25 1000 500 1000 500 trr IRrM 200 200 100 50 20 10 5 2 1 0.5 R G=0.33 V GE=15V TC 125 2000 CollectorCurrentI C(A) Fig.9-ReverseRecoveryCharacteristics (Typical) PeakReverseRecoveryCurrentI RrM(A) ReverseRecoveryTimetrr (ns) 100 0.2 0 1200 2400 3600 4800 6000 7200 0 400 800 Fig.11-TransientThermalImpedance 2x10 -1 TransientThermalImpedanceRth (J-C)(/W) 1x10 -1 FRD 5x10 -2 IGBT 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 5x10 -4 TC=25 2x10 -4 1x10 -4 10 -5 1200 CollectortoEmitterVoltageV CE (V) -di/dt (A/s) 1ShotPulse 10 -4 10 -3 10 -2 Timet (s) 10 -1 1 10 1 1600